Imaging device and solid-state image sensor

ABSTRACT

An imaging device includes a first electrode, a charge accumulating electrode arranged with a space from the first electrode, an isolation electrode arranged with a space from the first electrode and the charge accumulating electrode and surrounding the charge accumulating electrode, a photoelectric conversion layer formed in contact with the first electrode and above the charge accumulating electrode with an insulating layer interposed therebetween, and a second electrode formed on the photoelectric conversion layer. The isolation electrode includes a first isolation electrode and a second isolation electrode arranged with a space from the first isolation electrode, and the first isolation electrode is positioned between the first electrode and the second isolation electrode.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.17/252,774, filed Dec. 16, 2020, which is a national stage applicationunder 35 U.S.C. 371 and claims the benefit of PCT Application No.PCT/JP2019/022702, having an international filing date of Jun. 7, 2019,which designated the United States, which PCT application claimed thebenefit of Japanese Patent Application No. 2018-126650, filed Jul. 3,2018, the entire disclosures of each of which are incorporated herein byreference.

TECHNICAL FIELD

The present disclosure relates to an imaging device and a solid-stateimage sensor that includes the imaging device.

BACKGROUND ART

An imaging device in which an organic semiconductor material is used fora photoelectric conversion layer can perform photoelectric conversion ofa specific color (wavelength band). Further, since the imaging devicehas such a characteristic as just described, in the case where it isused as an imaging device in a solid-state image sensor, it is possibleto obtain a structure (stacked type imaging device) in which a sub pixelincludes a combination of an on-chip color filter (OCCF) and an imagingdevice and such sub pixels are stacked, which cannot be implemented by aconventional solid-state image sensor in which sub pixels are arrayedtwo-dimensionally (for example, refer to Japanese Patent Laid-open No.2017-157816). Further, since a demosaic process is not required, thereis an advantage that a false color does not appear. It is to be notedthat, in the following description, an imaging device that includes aphotoelectric conversion portion provided on or above a semiconductorsubstrate is sometimes referred to as a “first type imaging device” forthe convenience of description, and the photoelectric conversion portionconfiguring the first type imaging device is sometimes referred to as a“first type photoelectric conversion portion” for the convenience ofdescription. Further, an imaging device provided in a semiconductorsubstrate is sometimes referred to as a “second type imaging device” forthe convenience of description, and a photoelectric conversion portionconfiguring the second type imaging device is sometimes referred to as a“second type photoelectric conversion portion” for the convenience ofdescription.

An example of a structure of a stacked type imaging device (stacked typesolid-state image sensor) disclosed in Japanese Patent Laid-open No.2017-157816 is depicted in FIG. 57 . In the example depicted in FIG. 57, a third photoelectric conversion portion 43 and a second photoelectricconversion portion 41 that are second type photoelectric conversionportions configuring a third imaging device 15 and a second imagingdevice 13 that are second type imaging devices are formed in a stackedstate in a semiconductor substrate 70. Further, a first photoelectricconversion portion 11′ that is a first type photoelectric conversionportion is arranged above the semiconductor substrate 70 (particularly,above the second imaging device 13). Here, the first photoelectricconversion portion 11′ includes a first electrode 21, a photoelectricconversion layer 23 configured from an organic material, and a secondelectrode 22 and configures a first imaging device 11 that is a firsttype imaging device. Further, a charge accumulating electrode 24 isprovided with a space from the first electrode 21, and a photoelectricconversion layer 23 is positioned above the charge accumulatingelectrode 24 with an insulating layer 82 interposed therebetween. In thesecond photoelectric conversion portion 41 and the third photoelectricconversion portion 43, for example, blue light and red light are eachphotoelectrically converted depending upon the difference in absorptioncoefficient. Further, in the first photoelectric conversion portion 11′,for example, green light is photoelectrically converted.

Charge generated by photoelectric conversion by the second photoelectricconversion portion 41 and the third photoelectric conversion portion 43is once accumulated into the second photoelectric conversion portion 41and the third photoelectric conversion portion 43 and is thentransferred to a second floating diffusion layer (Floating Diffusion)FD₂ and a third floating diffusion layer FD₃ by a vertical transistor(whose gate portion 45 is depicted) and a transfer transistor (whosegate portion 46 is depicted), whereafter it is outputted to an externalreading out circuit (not depicted). Also the transistors and thefloating diffusion layers FD₂ and FD₃ are formed on the semiconductorsubstrate 70.

Upon charge accumulation, charge generated by photoelectric conversionin the first photoelectric conversion portion 11′ is attracted by thecharge accumulating electrode 24 and is accumulated into thephotoelectric conversion layer 23. Upon charge transfer, the chargeaccumulated in the photoelectric conversion layer 23 is accumulated intoa first floating diffusion layer FD₁ formed on the semiconductorsubstrate 70, through the first electrode 21, a contact hole portion 61,and a wiring layer 62. Further, the first photoelectric conversionportion 11′ is connected also to a gate portion 52 of an amplificationtransistor for converting a charge amount into a voltage, through thecontact hole portion 61 and the wiring layer 62. In addition, the firstfloating diffusion layer FD₁ configures part of a reset transistor(whose gate portion 51 is depicted). It is to be noted that referencenumerals 63, 64, 65, 66, 71, 72, 76, 81, 83, 90 and so forth aredescribed in connection with a working example 1.

CITATION LIST Patent Literature

-   [PTL 1]

Japanese Patent Laid-open No. 2017-157816

SUMMARY Technical Problem

Incidentally, it cannot be considered that there is no such possibilitythat, in such a first imaging device 11 as described above, chargeaccumulated in the photoelectric conversion layer 23 moves, duringoperation of the first imaging device 11, to an adjacent first imagingdevice 11. Further, it cannot be considered that there is no suchpossibility that charge accumulated in the photoelectric conversionlayer 23 is not transferred smoothly to the first electrode 21. Then, ifsuch a phenomenon as just described occurs, then, this gives rise tocharacteristic degradation of the solid-state image sensor.

Accordingly, it is an object of the present disclosure to provide animaging device configured and structured such that, during operation ofthe imaging device, movement of charge between imaging devices adjacentto each other can be reduced with certainty and charge accumulated in aphotoelectric conversion layer is transferred smoothly to a firstelectrode and a solid-state image sensor that includes such an imagingdevice as just described.

Solution to Problem

In order to attain the object described above, an imaging device of thepresent disclosure includes

a first electrode,

a charge accumulating electrode arranged with a space from the firstelectrode,

an isolation electrode arranged with a space from the first electrodeand the charge accumulating electrode and surrounding the chargeaccumulating electrode,

a photoelectric conversion layer formed in contact with the firstelectrode and above the charge accumulating electrode with an insulatinglayer interposed therebetween, and

a second electrode formed on the photoelectric conversion layer, inwhich

the isolation electrode includes a first isolation electrode and asecond isolation electrode arranged with a space from the firstisolation electrode, and

the first isolation electrode is positioned between the first electrodeand the second isolation electrode.

A solid-state image sensor according to a first form of the presentdisclosure for achieving the object described above, includes

a plurality of imaging device blocks each including P×Q (where P≥2 andQ≥1) imaging devices such that P imaging devices are arranged in a firstdirection and Q imaging device is arranged in a second directiondifferent from the first direction, in which

each imaging device includes

-   -   a first electrode,    -   a charge accumulating electrode arranged with a space from the        first electrode,    -   an isolation electrode arranged with a space from the first        electrode and the charge accumulating electrode and surrounding        the charge accumulating electrode,    -   a photoelectric conversion layer formed in contact with the        first electrode and above the charge accumulating electrode with        an insulating layer interposed therebetween, and    -   a second electrode formed on the photoelectric conversion layer,

the isolation electrode includes a first isolation electrode, a secondisolation electrode, and a third isolation electrode,

the first isolation electrode is arranged adjacent to but with a spacefrom the first electrode between imaging devices placed side by side atleast along the second direction in the imaging device block,

the second isolation electrode is arranged between imaging devices inthe imaging device block, and

the third isolation electrode is arranged between imaging device blocks.

A solid-state image sensor according to a second form of the presentdisclosure for achieving the object described above includes a stackedtype imaging device that includes at least one imaging device of thepresent disclosure.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a view schematically depicting an arrangement state of acharge accumulating electrode, a first isolation electrode, a secondisolation electrode, and a first electrode in a solid-state image sensorof a working example 1.

FIGS. 2A and 2B are views schematically depicting potential of eachelectrode in the imaging device of the working example 1.

FIGS. 3A and 3B are views schematically depicting potential of eachelectrode in the imaging device of the working example 1.

FIGS. 4A and 4B are views schematically depicting potential of eachelectrode in the imaging device of the working example 1.

FIGS. 5A, 5B, and 5C are views schematically depicting potential of eachelectrode in the imaging device of the working example 1.

FIGS. 6A and 6B are views schematically depicting potential of eachelectrode in the imaging device of the working example 1.

FIGS. 7A and 7B are each a view depicting part of each electrode in anenlarged scale for illustrating a positional relation of the electrodesin the imaging device of the working example 1 and a view depicting partof each electrode in an enlarged scale for illustrating a positionalrelation of the electrodes in an imaging device in which a firstisolation electrode is not provided.

FIG. 8 is one schematic partial sectional view of the imaging device andthe stacked type imaging device of the working example 1.

FIG. 9 is an equivalent circuit diagram of the imaging device and thestacked type imaging device of the working example 1.

FIG. 10 is an equivalent circuit diagram of the imaging device and thestacked type imaging device of the working example 1.

FIG. 11 is a conceptual view of the solid-state image sensor of theworking example 1.

FIG. 12 is an equivalent circuit diagram of a modification of theimaging device and the stacked type imaging device of the workingexample 1 (modification 1 of the working example 1).

FIG. 13 is a schematic sectional view of a modification of the imagingdevice (two juxtaposed imaging devices are depicted) of the workingexample 1 (modification 2 of the working example 1).

FIG. 14 is a view schematically depicting an arrangement state of acharge accumulating electrode, a first isolation electrode, a secondisolation electrode, a third isolation electrode, and a first electrodein the solid-state image sensor of a working example 2.

FIG. 15 is a view schematically depicting an arrangement state of acharge accumulating electrode, a first isolation electrode, a secondisolation electrode, a third isolation electrode, and a first electrodein a modification of the solid-state image sensor of the working example2.

FIGS. 16A and 16B are schematic partial sectional views of an imagingdevice (two juxtaposed imaging devices) of a working example 3 and amodification of the working example 3.

FIGS. 17A and 17B are schematic partial sectional views of a differentmodification of the imaging device (two juxtaposed imaging devices) ofthe working example 3.

FIG. 18 is a schematic partial sectional view of an imaging device and astacked type imaging device of a working example 4.

FIG. 19 is a schematic partial sectional view of an imaging device and astacked type imaging device of a working example 5.

FIG. 20 is a schematic partial sectional view of a modification of theimaging device and the stacked type imaging device of the workingexample 5.

FIG. 21 is a schematic partial sectional view of another modification ofthe imaging device of the working example 5.

FIG. 22 is a schematic partial sectional view of a further modificationof the imaging device of the working example 5.

FIG. 23 is a schematic partial sectional view of an imaging device and astacked type imaging device of a working example 6.

FIG. 24 is an equivalent circuit diagram of the imaging device and thestacked type imaging device of the working example 6.

FIG. 25 is an equivalent circuit diagram of the imaging device and thestacked type imaging device of the working example 6.

FIG. 26 is a schematic partial sectional view of an imaging device and astacked type imaging device of a working example 7.

FIG. 27 is an equivalent circuit diagram of the imaging device and thestacked type imaging device of the working example 7.

FIG. 28 is an equivalent circuit diagram of the imaging device and thestacked type imaging device of the working example 7.

FIG. 29 is a schematic arrangement diagram of a first electrode and acharge accumulating electrode configuring the imaging device of theworking example 7.

FIG. 30 is a schematic partial sectional view of an imaging device and astacked type imaging device of a working example 8.

FIG. 31 is a schematic partial sectional view depicting a portion atwhich a charge accumulating electrode, a photoelectric conversion layer,and a second electrode in the imaging device of the working example 8are stacked, in an enlarged scale.

FIG. 32 is a schematic partial sectional view of a portion at which acharge accumulating electrode, a photoelectric conversion layer, and asecond electrode in an imaging device of a working example 9 arestacked, in an enlarged scale.

FIG. 33 is a schematic partial sectional view of an imaging device and astacked type imaging device of a working example 10.

FIG. 34 is a schematic partial sectional view of an imaging device and astacked type imaging device of a working example 11 and a workingexample 12.

FIGS. 35A and 35B are schematic top plan views of a charge accumulatingelectrode segment in the working example 12.

FIGS. 36A and 36B are schematic top plan views of the chargeaccumulating electrode segment in the working example 12.

FIG. 37 is a schematic partial sectional view of an imaging device and astacked type imaging device of a working example 13 and the workingexample 12.

FIGS. 38A and 38B are schematic top plan views of a charge accumulatingelectrode segment of the working example 13.

FIG. 39 is a schematic partial sectional view of another modification ofthe imaging device and the stacked type imaging device of the workingexample 1.

FIG. 40 is a schematic partial sectional view of a further modificationof the imaging device and the stacked type imaging device of the workingexample 1.

FIGS. 41A, 41B, and 41C are schematic partial sectional views of aportion of a first electrode and so forth of the further modification ofthe imaging device and the stacked type imaging device of the workingexample 1, in an enlarged scale.

FIG. 42 is a schematic partial sectional view of a still furthermodification of the imaging device and the stacked type imaging deviceof the working example 1.

FIG. 43 is a schematic partial sectional view of a yet furthermodification of the imaging device and the stacked type imaging deviceof the working example 1.

FIG. 44 is a schematic partial sectional view of a yet furthermodification of the imaging device and the stacked type imaging deviceof the working example 1.

FIG. 45 is a schematic partial sectional view of another modification ofthe imaging device and the stacked type imaging device of the workingexample 6.

FIG. 46 is a schematic partial sectional view of a yet furthermodification of the imaging device and the stacked type imaging deviceof the working example 1.

FIG. 47 is a schematic partial sectional view of a further modificationof the imaging device and the stacked type imaging device of the workingexample 6.

FIG. 48 is a schematic partial sectional view of a portion at which thecharge accumulating electrode, the photoelectric conversion layer, andthe second electrode in the modification of the imaging device of theworking example 8 are stacked, in an enlarged scale.

FIG. 49 is a schematic partial sectional view of a portion at which thecharge accumulating electrode, the photoelectric conversion layer, andthe second electrode in the modification of the imaging device of theworking example 9 are stacked, in an enlarged scale.

FIG. 50 is a view schematically depicting an arrangement state of thecharge accumulating electrode, the first isolation electrode, the secondisolation electrode, and the first electrode in the modification of thesolid-state image sensor of the working example 1.

FIGS. 51A and 51B are views schematically depicting an arrangement stateof the charge accumulating electrode, the first isolation electrode, thesecond isolation electrode, and the first electrode in the modificationof the solid-state image sensor of the working example 1.

FIG. 52 is a view schematically depicting an arrangement state of acharge accumulating electrode, a first isolation electrode, a secondisolation electrode, a third isolation electrode, and a first electrodein a modification of the solid-state image sensor of the working example2.

FIG. 53 is a view schematically depicting an arrangement state of acharge accumulating electrode, a first isolation electrode, a secondisolation electrode, a third isolation electrode, a charge dischargingelectrode, and a first electrode in the solid-state image sensor of theworking example 2 including a charge discharging electrode.

FIG. 54 is a schematic top plan view of a charge accumulating electrode,a first isolation electrode, a second isolation electrode, a thirdisolation electrode, and a first electrode in the modification of thesolid-state image sensor of the working example 2.

FIGS. 55A, 55B, and 55C are charts depicting an example of reading outdriving in the modification of the solid-state image sensor of theworking example 2 depicted in FIG. 54 .

FIG. 56 is a conceptual view of an example in which a solid-state imagesensor including the imaging device and the stacked type imaging deviceof the present disclosure is used for electronic equipment (camera).

FIG. 57 is a conceptual view of a conventional stacked type imagingdevice (stacked type solid-state image sensor).

FIG. 58 is a block diagram depicting an example of schematicconfiguration of a vehicle control system.

FIG. 59 is a diagram of assistance in explaining an example ofinstallation positions of an outside-vehicle information detectingsection and an imaging section.

FIG. 60 is a view depicting an example of a schematic configuration ofan endoscopic surgery system.

FIG. 61 is a block diagram depicting an example of a functionalconfiguration of a camera head and a camera control unit (CCU).

DESCRIPTION OF EMBODIMENTS

In the following, while the present disclosure is described on the basisof working examples with reference to the drawings, the presentdisclosure is not limited to the working examples, and various numericalvalues and materials in the working examples are exemplary. It is to benoted that the description is given in the following order.

-   1. Description Relating to Whole of Imaging Device of Present    Disclosure and Solid-State Image Sensor according to First Form and    Second Form of Present Disclosure-   2. Working Example 1 (Imaging Device of Present Disclosure and    Solid-State Image Sensor According to Second Form of Present    Disclosure)-   3. Working Example 2 (Solid-State Image Sensor According to First    Form of Present Disclosure)-   4. Working Example 3 (Modification of Working Example 1 and Working    Example 2)-   5. Working Example 4 (Modification of Working Example 1 to Working    Example 3)-   6. Working Example 5 (Modification of Working Example 1 to Working    Example 4)-   7. Working Example 6 (Modification of Working Example 1 to Working    Example 5, Imaging Device including Transfer Controlling Electrode)-   8. Working Example 7 (Modification of Working Example 1 to Working    Example 6, Imaging Device of Present Disclosure Including Plurality    of Charge Accumulating Electrode Segments)-   9. Working Example 8 (Modification of Working Example 1 to Working    Example 6, Imaging Device of First Configuration and Sixth    Configuration)-   10. Working Example 9 (Imaging Device of Second Configuration and    Sixth Configuration of Present Disclosure)-   11. Working Example 10 (Imaging Device of Third Configuration)-   12. Working Example 11 (Imaging Device of Fourth Configuration)-   13. Working Example 12 (Imaging Device of Fifth Configuration)-   14. Working Example 13 (Imaging Device of Sixth Configuration)-   15. Others

Description Relating to Whole of Imaging Device of Present Disclosureand Solid-State Image Sensor According to First Form and Second Form ofPresent Disclosure>

The solid-state image sensor according to the second form of the presentdisclosure can be formed such that at least one lower imaging device isprovided below an imaging device and that the wavelength of lightreceived by the imaging device and the wavelength of light received bythe lower imaging device are made different from each other. Further, inthis case, the solid-state image sensor can be formed such that twolower imaging devices are stacked.

The imaging device of the present disclosure or the imaging device ofthe present disclosure that is included in the solid-state image sensoraccording to the second form of the present disclosure including apreferred form described above can be formed such that the firstisolation electrode has potential of a fixed value V_(ES-1) and thesecond isolation electrode also has potential of another fixed valueV_(ES-2), or can be formed such that the first isolation electrode haspotential that changes from a fixed value V_(ES-1) (in particular,changes to a value V_(ES-1)′) and the second isolation electrode haspotential of a fixed value V_(ES-2). In those forms, the imaging devicecan be formed such that, where charge to be accumulated is electrons,V_(ES-1)>V_(ES-2) is satisfied, but where positive holes to beaccumulated are electrons, V_(ES-1)<V_(ES-2) is satisfied, or can beformed such that V_(ES-2)=V_(ES-1) is satisfied.

The solid-state image sensor according to the first form of the presentdisclosure can be formed such that the third isolation electrode isshared by imaging device blocks adjacent to each other.

Further, the solid-state image sensor according to the first form of thepresent disclosure including the preferred form described above can beconfigured such that

the first isolation electrode is arranged adjacent to but with a spacefrom the first electrode between imaging devices placed side by sidealong the second direction in the imaging device block, and

the second isolation electrode is arranged between imaging devicesplaced side by side along the first direction and is arranged with aspace from the first isolation electrode between imaging devices placedside by side along the second direction. Further, in this case, thesolid-state image sensor can be configured such that the secondisolation electrode and the third isolation electrode are connected toeach other.

Alternatively, the solid-state image sensor according to the first formof the present disclosure including the preferred forms described abovecan be configured such that

the first isolation electrode is arranged adjacent to but with a spacefrom the first electrode between imaging devices placed side by sidealong the second direction in the imaging device block and is furtherarranged adjacent to but with a space from the first electrode betweenimaging devices placed side by side along the first direction, and

the second isolation electrode is arranged with a space from the firstisolation electrode between imaging devices placed side by side alongthe second direction and is further arranged with a space from the firstisolation electrode between imaging devices placed side by side alongthe first direction. Further, in this instance, the solid-state imagesensor can be configured such that the second isolation electrode andthe third isolation electrode are connected to each other.

Further, the solid-state image sensor according to the first form of thepresent disclosure including the preferred forms and configurationsdescribed above can be configured such that the first isolationelectrode has potential of a fixed value V_(ES-1) and the secondisolation electrode and the third isolation electrode also havepotential of a fixed value V_(ES-2), or can be configured such that thefirst isolation electrode has potential that changes from a fixed valueV_(ES-1) (in particular, changes to a value V_(ES-1)′) and the secondisolation electrode and the third isolation electrode have potential ofa fixed value V_(ES-2) Further, in those forms, the solid-state imagesensor can be formed such that, where charge to be accumulated iselectrons, V_(ES-1)>V_(ES-2) is satisfied, but where positive holes tobe accumulated are electrons, V_(ES-1)<V_(ES-2) is satisfied, or can beformed such that V_(ES-2)=V_(ES-1) is satisfied.

Further, the solid-state image sensor according to the first form of thepresent disclosure including the preferred forms and configurationsdescribed above can be formed such that the first electrode is shared byP×Q imaging devices that configure an imaging device block. Further, thesolid-state image sensor can be formed such that each of the imagingdevice blocks includes a control portion, the control portion includesat least a floating diffusion layer and an amplification transistor, andthe shared first electrode is connected to the control portion.

In such a manner, in the solid-state image sensor according to the firstform of the present disclosure, since the first electrode is shared bythe P×Q imaging devices that configure one imaging device block, theconfiguration and structure in a pixel region in which a plurality ofimaging devices are arrayed can be simplified and refined. Then, onefloating diffusion layer is provided for one imaging device blockincluding the P×Q imaging devices. Here, the P×Q imaging devicesprovided for the one floating diffusion layer may include a plurality ofimaging devices of the first type hereinafter described or may includeat least one imaging device of the first type and one or two or moreimaging devices of a second type hereinafter described.

Further, though not restrictive, the solid-state image sensor accordingto the first form of the present disclosure including the preferredforms and configurations described above, P=2 and Q=2 are applicable.

Further, the solid-state image sensor according to the first form of thepresent disclosure including the preferred forms and configurationsdescribed above can be formed such that it includes a stacked typeimaging device including at least one imaging device of the presentdisclosure. Further, the solid-state image sensor according to the firstform of the present disclosure having such a form as just described canbe formed such that a lower imaging device block of at least one layeris provided below a plurality of imaging device blocks, the lowerimaging device block includes a plurality of imaging devices(particularly, P×Q imaging devices including P imaging device along afirst direction and Q imaging devices along a second direction), and thewavelength of light to be received by the imaging device configuring theimaging device block and the wavelength of light to be received by theimaging device configuring the lower imaging device block are differentfrom each other. Further, the solid-state image sensor according to thefirst form of the present disclosure including such a preferred form asjust described can be formed such that the lower imaging device block isprovided in two layers. Further, the solid-state image sensor accordingto the first form of the present disclosure including the preferredforms described above can be formed such that a plurality of(particularly, P×Q) imaging devices configuring the lower imaging deviceblock include a shared floating diffusion layer.

The solid-state image sensor according to the first form of the presentdisclosure may adopt, in the case where the first electrode is shared byfour imaging devices that configure the imaging device block, a readingout method by which charge accumulated in the four imaging devices isread out individually by a total of four times or may adopt anotherreading out method by which charge accumulated in the four imagingdevices is read out simultaneously by a total of one time, under thecontrol of the isolation electrodes. The former method is sometimesreferred to as a “first mode reading out method” for the convenience ofdescription, and the latter method is sometimes referred to as a “secondmode reading out method” for the convenience of description. By thefirst mode reading out method, refinement of an image to be obtained bythe solid-state image sensor can be achieved. By the second mode readingout method, signals obtained by the four imaging devices are added inorder to achieve increase of the sensitivity. Switching between thefirst mode reading out method and the second mode reading out method canbe achieved by providing suitable switching means in the solid-stateimage sensor. In the first mode reading out method, it is possible forP×Q imaging devices to be shared by one floating diffusion layer, bysuitably controlling the timing of a charge transfer period, and P×Qimaging devices configuring the imaging device block are connected toone driving circuit. However, control of the charge accumulatingelectrode is performed for each imaging device.

The imaging device of the present disclosure or the imaging device ofthe present disclosure configuring the solid-state image sensorsaccording to the first and second forms of the present disclosureincluding the preferred forms described above (hereinafter, such imagingdevices are sometimes collectively referred to as an “imaging device orthe like of the present disclosure”) can be formed such that the firstisolation electrode, the second isolation electrode, and the thirdisolation electrode are provided in a region opposed to a region of thephotoelectric conversion layer with an insulating layer interposedtherebetween. It is to be noted that the isolation electrodes aresometimes referred to as a “lower first isolation electrode,” a “lowersecond isolation electrode,” and a “lower third isolation electrode,”respectively, for the convenience of description and they are sometimescollectively referred to as a “lower isolation electrode.”Alternatively, the imaging device or the like of the present disclosurecan be formed such that the first isolation electrode, the secondisolation electrode, and the third isolation electrode are provided witha space from the second electrode on the photoelectric conversion layer.It is to be noted that the isolation electrodes are sometimes referredto as an “upper first isolation electrode,” an “upper second isolationelectrode,” and an “upper third isolation electrode,” respectively, forthe convenience of description and they are sometimes collectivelyreferred to as an “upper isolation electrode.”

Although, in the imaging device or the like of the present disclosure,the isolation electrode is arranged with a space from the firstelectrode and the charge accumulating electrode and surrounds the chargeaccumulating electrode and the first isolation electrode is positionedbetween the first electrode and the second isolation electrode, in thecase of the upper isolation electrode, an orthogonal projection image ofthe isolation electrode is positioned with a space from orthogonalprojection images of the first electrode and the charge accumulatingelectrode and surrounds an orthogonal projection image of the chargeaccumulating electrode while an orthogonal projection image of the firstisolation electrode is positioned between an orthogonal projection imageof the first electrode and an orthogonal projection image of the secondisolation electrode. In some cases, part of the orthogonal projectionimage of the second isolation electrode and part of the orthogonalprojection image of the charge accumulating electrode may overlap witheach other. Alternatively, the orthogonal projection image of the firstisolation electrode is positioned adjacent to but with a space from theorthogonal projection image of the first electrode between imagingdevices arranged at least along the second direction in the imagingdevice block, and the second isolation electrode is arranged betweenimaging devices in the imaging device block while the third isolationelectrode is arranged between imaging device blocks.

Reference signs representing potential to be applied to the variouselectrodes in the following description are indicated in a table 1below.

TABLE 1 Charge Charge accumulation transfer period period Firstelectrode V₁₁ V₁₂ Second electrode V₂₁ V₂₂ Charge accumulation electrodeV₃₁ V₃₂ First isolation electrode Case - 1 V_(ES-1) V_(ES-1) Case - 2V_(ES-1) V_(ES-1′) Second isolation electrode V_(ES-2) V_(ES-2) Thirdisolation electrode V_(ES-3) V_(ES-3) Transfer controlling electrode V₄₁V₄₂ Charge discharging electrode V₅₁ V₅₂

The imaging device or the like of the present disclosure including thepreferred forms and configurations described above can be formed suchthat it further includes a semiconductor substrate and the photoelectricconversion portion is arranged above the semiconductor substrate. It isto be noted that the first electrode, the charge accumulating electrode,the second electrode, the various isolation electrodes, and the variouselectrodes are connected to a driving circuit hereinafter described.

Further, the imaging device or the like of the present disclosureincluding the preferred forms and configurations described above can beformed such that the size of the charge accumulating electrode isgreater than that of the first electrode. Where the area of the chargeaccumulating electrode is s₁′ and the area of the first electrode is s₁,though not restrictive, preferably

4≤s ₁ ′/s ₁

is satisfied.

The second electrode positioned on the light incidence side may be madecommon to a plurality of imaging devices except for a case in which anupper isolation electrode is formed. In other words, the secondelectrodes can be formed as what is generally called a solid electrode.The photoelectric conversion layer can be made common to a plurality ofimaging devices. In particular, the imaging device or the like of thepresent disclosure can be formed such that one photoelectric conversionlayer is formed in a plurality of imaging devices.

Further, the imaging device or the like of the present disclosureincluding the various preferred forms and configurations described abovecan be formed such that the first electrode extends in an openingprovided in an insulating layer and is connected to the photoelectricconversion layer. Alternatively, the imaging device or the like of thepresent disclosure can be formed such that the photoelectric conversionlayer extends in an opening provided in an insulating layer and isconnected to the first electrode, and, in this case, the imaging deviceor the like of the present disclosure can be formed such that

an edge portion of a top face of the first electrode is covered with theinsulating layer,

the first electrode is exposed on a bottom face of the opening, and

where a face of the insulating layer contacting with the top face of thefirst electrode is a first face and another face of the insulating layercontacting with a portion of the photoelectric conversion layer opposedto the charge accumulating electrode is a second face, a side face ofthe opening has an inclination that expands from the first face towardthe second face. Further, the imaging device or the like of the presentdisclosure can be formed such that the side face of the opening havingthe inclination expanding from the first face toward the second face ispositioned on the charge accumulating electrode side. It is to be notedthat this form includes a form in which some other layer is formedbetween the photoelectric conversion layer and the first electrode (forexample, a form in which a material layer suitable for chargeaccumulation is formed between the photoelectric conversion layer andthe first electrode).

Further, the imaging device or the like of the present disclosureincluding the preferred forms and configurations described above can beconfigured such that

it further includes a control portion provided on a semiconductorsubstrate and including a driving circuit,

the first electrode and the charge accumulating electrode are connectedto the driving circuit,

during a charge accumulation period, from the driving circuit, potentialV₁₁ is applied to the first electrode, potential V₃₁ is applied to thecharge accumulating electrode, and charge is accumulated into thephotoelectric conversion layer,

during a charge transfer period, from the driving circuit, potential V₁₂is applied to the first electrode, potential V₃₂ is applied to thecharge accumulating electrode, and charge accumulated in thephotoelectric conversion layer is read out into the control portion viathe first electrode. However, in the case where the potential of thefirst electrode is higher than the potential of the second electrode,

V₃₁≥V₁₁ and V₃₂<V₁₂

are satisfied, but in the case where the potential of the firstelectrode is lower than the potential of the second electrode,

V₃₁≤V₁₁ and V₃₂>V₁₂

are satisfied.

Further, the imaging device or the like of the present disclosureincluding the preferred forms and configurations described above can beformed such that it further includes a transfer controlling electrode(charge transfer electrode) arranged with a space from the firstelectrode and the charge accumulating electrode between the firstelectrode and the charge accumulating electrode and arranged opposed tothe photoelectric conversion layer with an insulating layer interposedtherebetween. It is to be noted that such an imaging device or the likeof the present disclosure of such a form as just described is sometimesreferred to as an “imaging device or the like of the present disclosureincluding a transfer controlling electrode” for the convenience ofdescription. Further, in the imaging device or the like of the presentdisclosure including the transfer controlling electrode, when thepotential to be applied to the transfer controlling electrode during acharge accumulation period is V₄₁, in the case where the potential ofthe first electrode is higher than the potential of the secondelectrode, it is preferred that V₄₁≤V₁₁ and V₄₁<V₃₁ be satisfied.Further, when the potential to be applied to the transfer controllingelectrode during a charge transfer period is V₄₂, in the case where thepotential of the first electrode is higher than the potential of thesecond electrode, it is preferred that V₃₂≤V₄₂≤V₁₂ be satisfied.

Further, the imaging device or the like of the present disclosureincluding the preferred forms and configurations described above can beformed such that it includes a charge discharging electrode connected tothe photoelectric conversion layer and arranged with a space from thefirst electrode and the charge accumulating electrode. It is to be notedthat the imaging device or the like of the present disclosure of such aform as just described is referred to as an “imaging device or the likeof the present disclosure including the charge discharging electrode”for the convenience of description. Further, the imaging device or thelike of the present disclosure including the charge dischargingelectrode can be formed such that the charge discharging electrode isarranged so as to surround the first electrode and the chargeaccumulating electrode (that is, in the form of a picture frame). Thecharge discharging electrode can be shared by (made common to) aplurality of imaging devices. In the case where the charge dischargingelectrode is provided, it is preferred that the various isolationelectrodes include an upper isolation electrode. Then, in this case, theimaging device or the like can be formed such that

the photoelectric conversion layer extends in a second opening providedin the insulating layer and is connected to the charge dischargingelectrode,

an edge portion of a top face of the charge discharging electrode iscovered with the insulating layer,

the charge discharging electrode is exposed on a bottom face of thesecond opening, and

when a face of the insulating layer contacting with the top face of thecharge discharging electrode is a third face and another face of theinsulating layer contacting with a portion of the photoelectricconversion layer opposed to the charge accumulating electrode is asecond face, a side face of the second opening has an inclination thatexpands from the third face toward the second face.

Further, the imaging device or the like of the present disclosureincluding the charge discharging electrode can be configured such that

it further includes a control portion provided on the semiconductorsubstrate and having a driving circuit,

the first electrode, the charge accumulating electrode, and the chargedischarging electrode are connected to the driving circuit,

during a charge accumulation period, from the driving circuit, potentialV₁₁ is applied to the first electrode, potential V₃₁ is applied to thecharge accumulating electrode, and potential V₅₁ is applied to thecharge discharging electrode, and charge is accumulated into thephotoelectric conversion layer, and

during a charge transfer period, from the driving circuit, potential V₁₂is supplied to the first electrode; potential V₃₂ is supplied to thecharge accumulating electrode; and potential V₅₂ is applied to thecharge discharging electrode, and the charge accumulated in thephotoelectric conversion layer is read out to the control portionthrough the first electrode. However, in the case where the potential ofthe first electrode is higher than the potential of the secondelectrode,

V₅₁>V₁₁ and V₅₂<V₁₂

are satisfied, but where the potential of the first electrode is lowerthan the potential of the second electrode,

V₅₁<V₁₁ and V₅₂>V₁₂

are satisfied.

Further, the imaging device or the like of the present disclosureincluding the preferred forms and configurations described above can beconfigured such that the charge accumulating electrode includes aplurality of charge accumulating electrode segments. It is to be notedthat the imaging device or the like of the present disclosure of such aform as just described is sometimes referred to as an “imaging device orthe like of the present disclosure including a plurality of chargeaccumulating electrode segments” for the convenience of description. Thenumber of charge accumulating electrode segments may be two or more.Further, the imaging device or the like of the present disclosureincluding a plurality of charge accumulating electrode segments can beformed such that, in the case where different potential is applied toeach of the N charge accumulating electrode segments,

in the case where the potential of the first electrode is higher thanthe potential of the second electrode, the potential to be applied tothe charge accumulating electrode segment positioned nearest to thefirst electrode (first photoelectric conversion portion segment) duringa charge transfer period is higher than the potential to be applied tothe charge accumulating electrode segment positioned remotest from thefirst electrode (Nth photoelectric conversion portion segment), and

in the case where the potential of the first electrode is lower than thepotential of the second electrode, the potential to be applied to thecharge accumulating electrode segment positioned nearest to the firstelectrode (first photoelectric conversion portion segment) during acharge transfer period is lower than the potential to be applied to thecharge accumulating electrode segment position remotest from the firstelectrode (Nth photoelectric conversion portion segment).

Further, the imaging device or the like of the present disclosureincluding the preferred forms and configurations described above can beformed such that

at least a floating diffusion layer and an amplification transistor thatconfigure a control portion are provided on a semiconductor substrate,and

the first electrode is connected to the floating diffusion layer and agate portion of the amplification transistor. Further, in this case, theimaging device or the like of the present disclosure including thepreferred forms and configurations described above is formed such that

a reset transistor and a selection transistor that configure the controlportion are further provided on the semiconductor substrate,

the floating diffusion layer is connected to one of source/drain regionsof the reset transistor, and

one of source/drain regions of the amplification transistor is connectedto one of source/drain regions of the selection transistor, and theother one of the source/drain regions of the selection transistor isconnected to a signal line.

Alternatively, as a modification of the imaging device or the like ofthe present disclosure including the preferred forms and configurationsdescribed above, imaging devices of a first configuration to a sixthconfiguration to be described below can be listed. In particular, in theimaging devices of the first configuration to the sixth configuration inthe imaging device or the like of the present disclosure including thepreferred forms and configurations described above,

the photoelectric conversion portion includes N (where N≥2)photoelectric conversion portion segments,

the photoelectric conversion layer includes N photoelectric conversionlayer segments,

the insulating layer includes N insulating layer segments,

in the imaging devices of the first configuration to the thirdconfiguration, the charge accumulating electrode includes N chargeaccumulating electrode segments,

in the imaging devices of the fourth configuration and the fifthconfiguration, the charge accumulating electrode includes N chargeaccumulating electrode segments arranged with a space between eachother,

the nth (where n=1, 2, 3 . . . , N) photoelectric conversion portionsegment includes the nth charge accumulating electrode segment, the nthinsulating layer segment, and the nth photoelectric conversion layersegment, and

a photoelectric conversion portion segment having a higher value of n ispositioned farther away from the first electrode.

Then, in the imaging device of the first configuration, the thickness ofthe insulating layer segment gradually changes over a range from thefirst photoelectric conversion portion segment to the Nth photoelectricconversion portion segment. Meanwhile, in the imaging device of thesecond configuration, the thickness of the photoelectric conversionlayer segment gradually changes over a range from the firstphotoelectric conversion portion segment to the Nth photoelectricconversion portion segment. Further, in the imaging device of the thirdconfiguration, the material configuring the insulating layer segment isdifferent between photoelectric conversion portion segments adjacent toeach other. Further, in the imaging device of the fourth configuration,the material configuring the charge accumulating electrode segment isdifferent between photoelectric conversion portion segments adjacent toeach other. Further, in the imaging device of the fifth configuration,the area of the charge accumulating electrode segment decreasesgradually over a range from the first photoelectric conversion portionsegment to the Nth photoelectric conversion portion segment. It is to benoted that the area may decrease continuously or may decrease stepwise.

Alternatively, in the imaging device of the sixth configuration in theimaging device or the like of the present disclosure including thepreferred forms and configurations described above, when the stackingdirection of the charge accumulating electrode, the insulating layer,and the photoelectric conversion layer is a Z direction and thedirection away from the first electrode is an X direction, the crosssectional area of the stacked portion when the stacked portion at whichthe charge accumulating electrode, the insulating layer, and thephotoelectric conversion layer are stacked is cut along a YZ virtualplane changes depending upon the distance from the first electrode. Itis to be noted that the change of the cross sectional area may be acontinuous change or may be a stepwise change.

In the imaging devices of the first configuration and the secondconfiguration, the N photoelectric conversion layer segments areprovided continuously while the N insulating layer segments are alsoprovided continuously and the N charge accumulating electrode segmentsare also provided successively. In the imaging devices of the thirdconfiguration to the fifth configuration, the N photoelectric conversionlayer segments are provided continuously. Further, in the imagingdevices of the fourth configuration and the fifth configuration, whilethe N insulating layer segments are provided continuously, in theimaging device of the third configuration, the N insulating layersegments are provided individually corresponding to the photoelectricconversion portion segments. Further, in the imaging devices of thefourth configuration and the fifth configuration, and in some cases, inthe imaging device of the third configuration, the N charge accumulatingelectrode segments are provided individually corresponding to thephotoelectric conversion portion segments. In the imaging devices of thefirst configuration to the sixth configurations, the same potential isapplied to all of the charge accumulating electrode segments.Alternatively, in the imaging devices of the fourth configuration andthe fifth configuration, and in some cases, in the imaging device of thethird configuration, different potential may be applied to each of the Ncharge accumulating electrode segments.

In the imaging devices of the first configuration to the sixthconfiguration and the solid-state image sensors according to the firstform and the second form of the present disclosure to which such imagingdevices are applied, the thickness of the insulating layer segment isdefined; the thickness of the photoelectric conversion layer segment isdefined; the material configuring the insulating layer segment isdifferent; the material configuring the charge accumulating electrodesegment is different; the area of the charge accumulating electrodesegment is defined; or the cross sectional area of the stacked portionis defined. Therefore, a kind of charge transfer gradient is formed suchthat charge generated by photoelectric conversion can be transferred tothe first electrode more easily and with certainty. Then, as a result,occurrence of an after-image and occurrence of remaining of chargetransfer can be prevented.

As a modification of the solid-state image sensor according to the firstform of the present disclosure, a solid-state image sensor whichincludes a plurality of imaging devices of the first configuration tothe sixth configuration can be applied, and, as a modification of thesolid-state image sensor according to the second form of the presentdisclosure, a solid-state image sensor which includes a plurality ofstacked type imaging devices each including at least one of the imagingdevices of the first configuration to the sixth configuration describedabove can be implemented.

Although, in the imaging devices of the first configuration to the fifthconfiguration, a photoelectric conversion portion segment having ahigher value of n is positioned away from the first electrode, whetheror not the photoelectric conversion portion segment is positioned awayfrom the first electrode is determined with reference to the Xdirection. Further, although, in the imaging device of the sixthconfiguration, the direction away from the first electrode is determinedas the X direction, the “X direction” is defined in the followingmanner. In particular, a pixel region in which a plurality of imagingdevices or stacked type imaging devices are arrayed includes a pluralityof pixels that are arrayed in a two-dimensional array, i.e., arrayedregularly in the X direction and the Y direction. In the case where theplanar shape of a pixel is a rectangle, the direction in which a side ofthe rectangle nearest to the first electrode extends is defined as a Ydirection, and a direction orthogonal to the Y direction is defined asan X direction. Alternatively, in the case where the planar shape of apixel is to have any shape, a general direction in which a line segmentor a curved line nearest to the first electrode is included is definedas a Y direction, and a direction orthogonal to the Y direction isdefined as an X direction.

In the following, the imaging devices of the first configuration to thesixth configuration are described in regard to a case in which thepotential of the first electrode is higher than the potential of thesecond electrode. However, in the case where the potential of the firstelectrode is lower than the potential of the second electrode, it issufficient if the potential is reversed between high and low levels.

In the imaging device of the first configuration, the thickness of theinsulating layer segment gradually changes over a range from the firstphotoelectric conversion portion segment to the Nth photoelectricconversion portion segment; the thickness of the insulating layersegment may gradually increase or gradually decrease. By this, a kind ofcharge transfer gradient is formed.

In the case where the charge to be accumulated is electrons, it issufficient to adopt a configuration in which the thickness of theinsulating layer segment gradually increases, but in the case where thecharge to be accumulated is positive holes, it is sufficient to adopt aconfiguration in which the thickness of the insulating layer segmentgradually increases. In addition, in those cases, if such a state as|V₃₁|≥|V₁₁| is entered during a charge accumulation period, then, thenth photoelectric conversion portion segment can accumulate a greateramount of charge than the (n+1)th photoelectric conversion portionsegment, and a stronger electric field is applied. Therefore, a flow ofcharge from the first photoelectric conversion portion segment to thefirst electrode can be prevented with certainty. Then, if such a stateas |V₃₂|<|V₁₂| is entered during a charge transfer period, then, a flowof charge from the first photoelectric conversion portion segment to thefirst electrode and a flow of charge from the (n+1)th photoelectricconversion portion segment to the nth photoelectric conversion portionsegment can be assured with certainty.

In the imaging device of the second configuration, the thickness of thephotoelectric conversion layer segment gradually changes over a rangefrom the first photoelectric conversion portion segment to the Nthphotoelectric conversion portion segment; the thickness of thephotoelectric conversion layer segment may gradually increase orgradually decrease. By this, a kind of charge transfer gradient isformed.

In the case where the charge to be accumulated is electrons, it issufficient to adopt a configuration in which the thickness of thephotoelectric conversion layer segment gradually increases, but in thecase where the charge to be accumulated is positive holes, it issufficient to adopt a configuration that the thickness of thephotoelectric conversion layer segment gradually increases. Further, inthe case where the thickness of the photoelectric conversion layersegment gradually increases, if such a state as V₃₁≥V₁₁ is enteredduring a charge accumulation period, or in the case where the thicknessof the photoelectric conversion layer segment gradually degreases, ifsuch a state as V₃₁≤V₁₁ is entered during a charge accumulation period,then, to the nth photoelectric conversion portion segment, a strongerelectric field than that to the (n+1)th photoelectric conversion portionsegment is applied, and a flow of charge from the first photoelectricconversion portion segment to the first electrode can be prevented withcertainty. Then, during a charge transfer period, in the case where thethickness of the photoelectric conversion layer segment graduallyincreases, if such a state as V₃₂<V₁₂ is entered, or in the case wherethe thickness of the photoelectric conversion layer segment graduallydecreases, if such a state as V₃₂>V₁₂ is entered, then, a flow of chargefrom the first photoelectric conversion portion segment to the firstelectrode and a flow of charge from the (n+1)th photoelectric conversionportion segment to the nth photoelectric conversion portion segment canbe assured with certainty.

In the imaging device of the third configuration, the materialconfiguring the insulating layer segment is different between adjacentphotoelectric conversion portion segments, and by this, a kind of chargetransfer gradient is formed. However, preferably, the value of therelative permittivity of the material configuring the insulating layersegments gradually decreases over a range from the first photoelectricconversion portion segment to the Nth photoelectric conversion portionsegment. Further, if, by adopting such a configuration as justdescribed, such a state as V₃₁≥V₁₁ is entered during a chargeaccumulation period, then, the nth photoelectric conversion portionsegment can accumulate a greater amount of charge than the (n+1)thphotoelectric conversion portion segment. Then, if such a state asV₃₂<V₁₂ is entered during a charge transfer period, then, a flow ofcharge from the first photoelectric conversion portion segment to thefirst electrode and a flow of charge from the (n+1)th photoelectricconversion portion segment to the nth photoelectric conversion portionsegment can be assured with certainty.

In the imaging device of the fourth configuration, the materialconfiguring the charge accumulating electrode segment is differentbetween adjacent photoelectric conversion portion segments, and by this,a kind of charge transfer gradient is formed. However, preferably, thevalue of the work function of the material configuring the insulatinglayer segment gradually increases over a range from the firstphotoelectric conversion portion segment to the Nth photoelectricconversion portion segment. Further, by adopting such a configuration asjust described, a potential gradient advantageous to signal chargetransfer can be formed without relying upon the positive/negative of thevoltage (potential).

In the imaging device of the fifth configuration, the area of the chargeaccumulating electrode segment gradually decreases over a range from thefirst photoelectric conversion portion segment to the Nth photoelectricconversion portion segment. Since a kind of charge transfer gradient isformed by this, if such a state of V₃₁≥V₁₁ is entered during a chargeaccumulation period, then, the nth photoelectric conversion portionsegment can accumulate a greater amount of charge than the (n+1)thphotoelectric conversion portion segment. Then, if such a state asV₃₂<V₁₂ is entered during a charge transfer period, then, a flow ofcharge from the first photoelectric conversion portion segment to thefirst electrode and a flow of charge from the (n+1)th photoelectricconversion portion segment to the nth photoelectric conversion portionsegment can be assured with certainty.

In the imaging device of the sixth configuration, the sectional area ofthe stacked portion changes depending upon the distance from the firstelectrode, and by this, a kind of charge transfer gradient is formed. Inparticular, if a configuration in which the thickness of the crosssection of the stacked portion is fixed and the width of the sectionalarea of the stacked portion decreases as the distance from the firstelectrode increases is adopted, then, similarly as in the description ofthe imaging device of the fifth configuration, if such a state asV₃₁≥V₁₁ is entered during a charge accumulation period, then, a regionnearer to the first electrode can accumulate a greater amount of chargethan a remoter region. Accordingly, if such a state as V₃₂<V₁₂ isentered during a charge transfer period, then, a flow of charge from theregion nearer to the first electrode to the first electrode and a flowof charge from the remoter region to the nearer region can be assuredwith certainty. On the other hand, if a configuration in which the widthof the cross section of the stacked portion is fixed and the thicknessof the cross section of the stacked portion, more particularly, thethickness of the insulating layer segment, gradually increases isadopted, then, similarly as in the description of the imaging device ofthe first configuration, if such a state as V₃₁≥V₁₁ is entered during acharge accumulation period, the region nearer to the first electrode canaccumulate a greater amount of charge than the remoter region and astronger electric field is applied, by which a flow of charge from theregion nearer to the first electrode to the first electrode can beprevented with certainty. Then, if such a state as V₃₂<V₁₂ is enteredduring a charge transfer period, then, a flow of charge from the regionnearer to the first electrode to the first electrode and a flow ofcharge from the remoter region to the nearer region can be assured withcertainty. Further, if a configuration in which the thickness of thephotoelectric conversion layer segment gradually increases is adopted,then, similarly as in the description of the imaging device of thesecond configuration, if such a state as V₃₁≥V₁₁ is entered during acharge accumulation period, then, a stronger electric filed is appliedto the region nearer to the first electrode than to the remoter regionand a flow of charge from the region nearer to the first electrode tothe first electrode can be prevented with certainty. Then, if such astate as V₃₂<V₁₂ is entered during a charge transfer period, then, aflow of charge from the region nearer to the first electrode to thefirst electrode and a flow of charge from the remoter region to thenearer region can be assured with certainty.

Further, the imaging device or the like of the present disclosureincluding the preferred forms and configurations described above can beformed such that light is incident from the second electrode side and ashading layer is formed on the light incidence side rather near to thesecond electrode. Alternatively, the imaging device or the like of thepresent disclosure can be formed such that light is incident from thesecond electrode side but light is not incident to the first electrode(in some cases, to the first electrode and the transfer controllingelectrode). Further, in this case, the imaging device or the like of thepresent disclosure can be formed such that a shading layer is formedabove the first electrode (in some cases, above the first electrode andthe transfer controlling electrode) and on the light incidence siderather near to the second electrode or can be formed such that anon-chip microlens is provided above the charge accumulating electrodeand the second electrode such that light incident to the on-chipmicrolens is focused on the charge accumulating electrode. Here, theshading layer may be arranged above a light incidence side face of thesecond electrode or on the light incident side face of the secondelectrode. In some cases, the shading layer may be formed on the secondelectrode. As the material for configuring the shading layer, chromium(Cr), copper (Cu), aluminum (Al), tungsten (W), and a resin that doesnot pass light (for example, a polyimide resin) can be exemplified.

As the imaging device or the like of the present disclosure,particularly, an imaging device (referred to as a “blue light imagingdevice of the first type” for the convenience of description) that hassensitivity to blue light and that includes a photoelectric conversionlayer (referred to as a “blue light photoelectric conversion layer ofthe first type” for the convenience of description) that absorbs bluelight (light of 425 to 495 nm), an imaging device (referred to as a“green light imaging device of the first type” for the convenience ofdescription) that has sensitivity to green light and that includes aphotoelectric conversion layer (referred to as “green lightphotoelectric conversion layer of the first type” for the convenience ofdescription) that absorbs green light (light of 495 to 570 nm), and animaging device (referred to as a “red light imaging device of the firsttype” for the convenience of description) that has sensitivity to redlight and that includes a photoelectric conversion layer (referred to asa “red light photoelectric conversion layer of the first type” for theconvenience of description) that absorbs red light (light of 620 to 750nm) can be exemplified. On the other hand, a conventional imaging devicethat does not include a charge accumulating electrode and hassensitivity to blue light is referred to as a “blue light imaging deviceof the second type” for the convenience of description; a conventionalimaging device that does not include a charge accumulating electrode andhas sensitivity to green light is referred to as a “green light imagingdevice of the second type” for the convenience of description; and aconventional imaging device that does not include a charge accumulatingelectrode and has sensitivity to red light is referred to as a “redlight imaging device of the second type” for the convenience ofdescription. Further, a photoelectric conversion layer configuring ablue light imaging device of the second type is referred to as a “bluelight photoelectric conversion layer of the second type” for theconvenience of description; a photoelectric conversion layer configuringa green light imaging device of the second type is referred to as a“green light photoelectric conversion layer of the second type” for theconvenience of description; and a photoelectric conversion layerconfiguring a red light imaging device of the second type is referred toas a “red light photoelectric conversion layer of the second type” forthe convenience of description.

Although the stacked type imaging device of the present disclosureincludes at least one imaging device or the like (photoelectricconversion device) of the present disclosure, particularly, for example,a stacked type imaging device configured and structured as follows canbe exemplified:

-   [A] a stacked type imaging device configured and structured such    that a blue light photoelectric conversion portion of the first    type, a green light photoelectric conversion portion of the first    type, and a red light photoelectric conversion portion of the first    type are stacked in the vertical direction, and

control portions of the blue light imaging device of the first type, thegreen light imaging device of the first type, and the red light imagingdevice of the first type are each provided on a semiconductor substrate;

-   [B] a stacked type imaging device configured and structured such    that the blue light photoelectric conversion portion of the first    type and the green light photoelectric conversion portion of the    first type are stacked in the vertical direction,

a red light photoelectric conversion portion of the second type isarranged below the two layers of the photoelectric conversion portionsof the first type, and

control portions of the blue light imaging device of the first type, thegreen light imaging device of the first type, and the red light imagingdevice of the second type are each provided on a semiconductorsubstrate;

-   [C] a stacked type imaging device configured and structured such    that a blue light photoelectric conversion portion of the second    type and the red light photoelectric conversion portion of the    second type are arranged below the green light photoelectric    conversion portion of the first type, and

control portions of the green light imaging device of the first type,the blue light imaging device of the second type, and the red lightimaging device of the second type are each provided on a semiconductorsubstrate; and

-   [D] a stacked type imaging device configured and structured such    that a green light photoelectric conversion portion of the second    type and the red light photoelectric conversion portion of the    second type are arranged below the blue light photoelectric    conversion portion of the first type, and

control portions of the blue light imaging device of the first type, thegreen light imaging device of the second type, and the red light imagingdevice of the second type are each provided on a semiconductorsubstrate. It is to be noted that the order of arrangement of thephotoelectric conversion portions of the imaging devices in the verticaldirection is preferably the order of the blue light photoelectricconversion portion, the green light photoelectric conversion portion,and the red light photoelectric conversion portion from the lightincidence direction or the order of the green light photoelectricconversion portion, the blue light photoelectric conversion portion, andthe red light photoelectric conversion portion from the light incidencedirection. This is because light of a shorter wavelength is absorbed athigher efficiency on the incidence surface side. Since red light has thelongest wavelength among the three colors, preferably, the red lightphotoelectric conversion portion is positioned in the lowermost layer asviewed from the light incidence face. One pixel is configured from astacked structure of the imaging devices. Further, the red lightphotoelectric conversion portion of the first type may be provided.Here, preferably, the photoelectric conversion layer of the red lightphotoelectric conversion portion of the first type is configured, forexample, from an organic material and is placed in the lowermost layerof the stacked structure of the imaging devices of the first type buthigher than the imaging devices of the second type. Alternatively, thephotoelectric conversion layer of the red light photoelectric conversionportion of the second type may be provided below the photoelectricconversion portions of the first type.

In the imaging devices of the first type, for example, the firstelectrode is formed on an interlayer insulating layer provided on thesemiconductor substrate. The imaging device formed on the semiconductorsubstrate may be formed as that of the back-illuminated type or as thatof the front-illuminated type.

In the case where the photoelectric conversion layer is configured froman organic material, the photoelectric conversion layer can be formed inany of four forms including:

-   (1) a form in which it is configured from a p-type organic    semiconductor;-   (2) a form in which it is configured from an n-type organic    semiconductor;-   (3) a form in which it is configured from a stacked structure of a    p-type organic semiconductor layer/an n-type organic semiconductor    layer; it is configured from a stacked structure of a p-type organic    semiconductor layer/a mixed layer (bulk hetero structure) of a    p-type organic semiconductor and an n-type organic semiconductor/an    n-type organic semiconductor layer; it is configured from a stacked    structure of a p-type organic semiconductor layer/a mixed layer    (bulk hetero structure) of a p-type organic semiconductor and an    n-type organic semiconductor; or it is configured from a stacked    structure of an n-type organic semiconductor layer/a mixed layer    (bulk hetero structure) of a p-type organic semiconductor and an    n-type organic semiconductor; and-   (4) a form in which it is configured from a mixture (bulk hetero    structure) of a p-type organic semiconductor and n-type organic    semiconductor. It is to be noted that a configuration in which the    layering order is changed optionally can be applied.

As the p-type organic semiconductor, naphthalene derivatives, anthracenederivatives, phenanthrene derivatives, pyrene derivatives, perylenederivatives, tetracene derivatives, pentacene derivatives, quinacridonederivatives, thiophene derivatives, thienothiophene derivatives,benzothiophene derivatives, benzothienobenzothiophene derivatives,triallylamine derivatives, carbazole derivatives, perylene derivatives,picene derivatives, chrysene derivatives, fluoranthene derivatives,phthalocyanine derivatives, subphthalocyanine derivatives,subporphyrazine derivatives, metal complexes with a heterocycliccompound as a ligand, polythiophene derivatives, polybenzothiadiazolederivatives, polyfluorene derivatives and so forth are applicable. Asthe n-type organic semiconductor, fullerenes and fullerenes derivatives<for example, fullerenes such as C60, C70, and C74 (higher fullerenes),encapsulating fullerenes and so forth), or fullerenes derivatives (forexample, fullerene fluorides, PCBM fullerene compounds, fullerenemultimers and so forth)>, organic semiconductors whose HOMO and LUMO aregreater (deeper) than those of p-type organic semiconductors,transparent inorganic metal oxides and so forth are applicable. As then-type organic semiconductor, particularly, heterocyclic compoundscontaining nitrogen atoms, oxygen atoms or sulfur atoms such as organicmolecules that have, at a molecular skeleton thereof, pyridinederivatives, pyrazine derivatives, pyrimidine derivatives, triazinederivatives, quinoline derivatives, quinoxaline derivatives,isoquinoline derivatives, acridine derivatives, phenazine derivatives,phenanthroline derivatives, tetrazole derivatives, pyrazole derivatives,imidazole derivatives, thiazole derivatives, oxazole derivatives,imidazole derivatives, benzimidazole derivatives, benzotriazolederivatives, benzoxazole derivatives, benzoxazole derivatives, carbazolederivatives, benzofuran derivatives, dibenzofuran derivatives,subporphyrazine derivatives, polyphenylene vinylene derivatives,polybenzothiadiazole derivatives, polyfluorene derivatives and so forth,organometallic complexes, and subphthalocyanine derivatives, forexample, are applicable. As a group or the like included in thefullerene derivatives, halogen atoms; linear, branched or cyclic alkylgroups or phenyl groups; groups having a linear or condensed-ringaromatic compound; groups having a halide; partial fluoroalkyl groups;perfluoroalkyl groups; cyril alkyl groups; cyril alkoxy groups;arylsilyl groups; aryl sulfanyl groups; alkyl sulfanyl groups; arylsulfonyl groups; alkyl sulfonyl groups; aryl sulfide groups; alkylsulfide groups; amino groups; alkyl amino groups; aryl amino groups;hydroxy groups; alcoxy groups; acyl amino groups; acyloxy groups;carbonyl groups; carboxy groups; carboxamide groups; carboalcoxy groups;acyl groups; sulfonil groups; cyano groups; nitro groups; groups havinga chalcogenide; phosphine groups; phosphon groups; and derivatives ofthem are applicable. Though not restrictive, the thickness of thephotoelectric conversion layer configured from an organic material(sometimes referred to as an “organic photoelectric conversion layer”)can be exemplified to be, for example, 1×10⁻⁸ to 5×10⁻⁷ m, preferably,2.5×10⁻⁸ to 3×10⁻⁷ m, more preferably, 2.5×10⁻⁸ to 2×10⁻⁷ m, mostpreferably, 1×10⁻⁷ to 1.8×10⁻⁷ M. It is to be noted that, althoughorganic semiconductors are frequently classified into the p type and then type, the p type signifies that positive holes are transportedreadily, and the n type signifies that electrons are transportedreadily; the interpretation that the organic semiconductor has positiveholes or electrons as multiple carriers of thermal excitation likeinorganic semiconductors is not restrictive.

Meanwhile, as a material for configuring an organic photoelectricconversion layer for photoelectrically converting green light, arhodamine dye, a melacianin pigment, a quinacridone derivative, asubphthalocyanine pigment (subphthalocyanine derivative) and so forthare applicable, and as a material for configuring an organicphotoelectric conversion layer for photoelectrically converting bluelight, for example, a coumarin acid pigment, tris-8-hydrixi quinolialuminum (Alq3), a melacianin pigment and so forth are applicable.Further, as a material for configuring an organic photoelectricconversion layer for photoelectrically converting red light, forexample, a phthalocyanine pigment and a subphthalocyanine pigment(subphthalocyanine derivative) are applicable.

Alternatively, as an inorganic material for configuring a photoelectricconversion layer, crystalline silicon, amorphous silicon,microcrystalline silicon, crystalline selenium, amorphous selenium, andCIGS (CuInGaSe), CIS (CuInSe₂), CuInS₂, CuAlS₂, CuAlSe₂, CuGaS₂,CuGaSe₂, AgAlS₂, AgAlSe₂, AgInS₂, and AgInSe₂, which are calcopalitecompounds, GaAs, InP, AlGaAs, InGaP, AlGaInP, and InGaAsP, which areIII-V group compounds, or further, such compound semiconductors as CdSe,CdS, In₂Se₃, In₂S₃, Bi₂Se₃, Bi₂S₃, ZnSe, ZnS, PbSe, and PbS areapplicable. In addition, it is also possible to use quantum dots formedfrom those materials for the photoelectric conversion layer.

Alternatively, the photoelectric conversion layer can be formed in astacked structure of a lower layer semiconductor layer and an upperlayer photoelectric conversion layer. By providing the lower layersemiconductor layer in such a manner, for example, it is possible toprevent recombination upon charge accumulation. Further, the chargetransfer efficiency of charge accumulated in the photoelectricconversion layer with respect to the first electrode can be increased.Further, it is possible to temporarily hold charge generated in thephotoelectric conversion layer and control the transfer timing and soforth. Further, generation of dark current can be suppressed. It issufficient if the material for configuring the upper layer photoelectricconversion layer is selected suitably from the various materials thatconfigure the photoelectric conversion layer described hereinabove.Meanwhile, as the material for configuring the lower layer semiconductorlayer, it is preferable to use a material that has a high value of theband gap energy (for example, a value of the band gap energy of 3.0 eVor more) and also has a mobility higher than that of the material forconfiguring the photoelectric conversion layer. In particular, oxidesemiconductor materials; transition metal dichalcogenide; siliconcarbide; diamond; graphene; carbon nanotube; and organic semiconductormaterials such as condensed polycyclic hydride compounds or condensedhydrocyclic compounds can be exemplified, and more particularly, as theoxide semiconductor material, indium oxide, gallium oxide, zinc oxide,tin oxide, materials containing at least one of the oxides, materialswith a dopant added to the materials, specifically, for example, IGZO,ITZO, IWZO, IWO, ZTO, ITO-SiO_(x) materials, GZO, IGO, ZnSnO₃, AlZnO,GaZnO, and InZnO are applicable. Further, materials containing CuI,InSbO₄, ZnMgO, CuInO₂, MgIn₂O₄, CdO or the like are applicable. However,those materials are not restrictive. Alternatively, as a material forconfiguring the lower layer semiconductor layer, in the case wherecharge to be accumulated is electrons, a material having ionizationpotential higher than the ionization potential of the material thatconfigures the photoelectric conversion layer is applicable, and in thecase where charge to be accumulated is positive holes, a material havingelectron affinity lower than the electron affinity of the material thatconfigures the photoelectric conversion layer is applicable.Alternatively, the impurity concentration of the material thatconfigures the lower layer semiconductor layer is preferably 1×10¹⁸ cm⁻³or less. The lower layer semiconductor layer may have a single layerconfiguration or may have a multilayer configuration. Further, thematerial that configures the lower layer semiconductor layer positionedabove the charge accumulating electrode and the material that configuresthe lower layer semiconductor layer positioned above the first electrodemay be made different from each other.

A single plate type color solid-state image sensor can be configuredfrom the solid-state image sensors according to the first form and thesecond form of the present disclosure.

In the solid-state image sensor according to the first form and thesecond form of the present disclosure including a stacked type imagingdevice, different from a solid-state image sensor that includes imagingdevices of a Bayer array (i.e., spectroscopy of blue, green, and red isnot performed using a color filter), one pixel is configured by stackingimaging devices having sensitivity to light of a plurality of differentwavelengths in an incidence direction of light in the same pixel, andthus, improvement of the sensitivity and improvement of the pixeldensity per unit volume can be achieved. Further, since organicmaterials have a high absorption coefficient, the film thickness of theorganic photoelectric conversion layer can be reduced in comparison witha conventional Si type photoelectric conversion layer, and leak of lightfrom an adjacent pixel or limitation to the incidence angle of light ismoderated. Further, although a conventional Si type imaging devicesuffers from false color because it generates a color signal byperforming an interpolation process among pixels of three colors, in thesolid-state image sensor according to the second form of the presentdisclosure that includes the stacked type imaging device, appearance offalse color can be reduced. Further, since the organic photoelectricconversion layer itself functions also as a color filter, even if acolor filter is not arranged, color separation can be performed.

On the other hand, in the solid-state image sensor according to thefirst form of the present disclosure that includes not the stacked typeimaging device but the imaging device, by using a color filter, arequirement for a spectroscopic characteristic of blue, green, and redcan be moderated, and high mass productivity is achieved. As the arrayof imaging devices in the solid-state image sensor according to thefirst form of the present disclosure, in addition to a Bayer array, aninterline array, a G stripe RB checkered array, a G stripe RB completecheckered array, a checkered complementary color array, a stripe array,an oblique stripe array, a primary color difference array, a field colordifference sequential array, a frame color difference sequential array,a MOS type array, an improved MOS type array, a frame interleave array,and a field interleave array are applicable. Here, one pixel (orsubpixel) can be configured from a single imaging device.

A pixel region in which a plurality of imaging devices or the like ofthe present disclosure or a plurality of stacked type imaging devices inthe present disclosure are arrayed includes a plurality of pixelsarrayed regularly in a two-dimensional array. The pixel region usuallyincludes an effective pixel region in which light is actually receivedand signal charge generated by photoelectric conversion is amplified andread out to a driving circuit and a black reference pixel region foroutputting optical black that becomes a reference for the black level.The black reference pixel region is usually arranged on an outerperipheral portion of the effective pixel region.

In the imaging device or the like of the present disclosure includingthe preferred forms and configurations described above, light is appliedand photoelectric conversion occurs in the photoelectric conversionlayer, whereupon carrier separation into positive holes (holes) andelectrons is performed. Then, the electrode from which the positiveholes are extracted is determined as an anode, and the electrode fromwhich the electrons are extracted is determined as a cathode. Not only aform in which the first electrode configures the anode and the secondelectrode configures the cathode but also a form in which conversely thefirst electrode configures the cathode and the second electrodeconfigures the anode are available.

In the case where a stacked type imaging device is configured, it can beconfigured such that the first electrode, the charge accumulatingelectrode, the various isolation electrodes, the transfer controllingelectrode, the charge discharging electrode, and the second electrodeare formed from a transparent conductive material. It is to be notedthat the first electrode, the charge accumulating electrode, the variousisolation electrodes, the transfer controlling electrode, and the chargedischarging electrode are sometimes collectively referred to as “firstelectrode and so forth.” Alternatively, in the case where the imagingdevice or the like of the present disclosure is arranged on a plane, forexample, like a Bayer array, the stacked type imaging device can beconfigured such that the second electrode is formed from a transparentconductive material and the first electrode, the charge accumulatingelectrode and so forth are formed from a metal material. In this case,the stacked type imaging device can be configured particularly such thatthe second electrode positioned on the light incidence side is formedfrom a transparent conductive material and the first electrode and soforth are formed, for example, from Al-ND (alloy of aluminum andneodymium) or ASC (alloy of aluminum, samarium, and copper). It is to benoted that an electrode made of a transparent conductive material issometimes referred to as a “transparent electrode.” Here, the band gapenergy of the transparent conductive material is 2.5 eV or more,preferably 3.1 eV or more. As the transparent conductive materialconfiguring the transparent electrode, a metal oxide having conductivityis applicable. In particular, indium oxide, indium tin oxide (ITO,Indium Tin Oxide, including In₂O₃ doped with Sn, crystalline ITO, andamorphous ITO), indium zinc oxide (IZO, Indium Zinc Oxide) where indiumis added as a dopant to zinc oxide, indium gallium oxide (IGO) whereindium is added as a dopant to gallium oxide, indium gallium zinc oxide(IGZO, In—GaZnO₄) where indium and gallium are added as a dopant to zincoxide, indium tin zinc oxide (ITZO) where indium and tin are added as adopant to zinc oxide, IFO (F-doped In₂O₃), tin oxide (SnO₂), ATO(Sb-doped SnO₂), FTO (F-doped SnO₂), zinc oxide (including ZnO dopedwith a different element), aluminum zinc oxide (AZO) where aluminum isadded as a dopant to zinc oxide, gallium zinc oxide (GZO) where galliumis added as a dopant to zinc oxide, titanium oxide (TiO₂), niobiumtitanium oxide (TNO) where niobium is added as a dopant to titaniumoxide, antimony oxide, spinel type oxide, and an oxide having a YbFe₂O₄structure are applicable. Alternatively, a transparent electrode having,as a mother layer, gallium oxide, titanium oxide, niobium oxide, nickeloxide or the like is applicable. As the thickness of the transparentelectrode, 2×10⁻⁸ to 2×10⁻⁷ m, preferably 3×10⁻⁸ to 1×10⁻⁷ m, isapplicable. In the case where transparency is required for the firstelectrode, it is preferable that the other electrodes are alsoconfigured from a transparent conductive material from the point of viewof simplification of the manufacturing process.

Alternatively, in the case where transparency is not required, aconductive material for configuring an anode having a function as anelectrode for extracting positive holes is preferably configured from aconductive material having a high work function (for example, φ=4.5 to5.5 eV). In particular, gold (Au), silver (Ag), chromium (Cr), nickel(Ni), palladium (Pd), platinum (Pt), iron (Fe), iridium (Ir), germanium(Ge), osmium (Os), rhenium (Re), and tellurium (Te) can be exemplified.On the other hand, a conductive material for configuring a cathodehaving a function as an electrode for extracting electrons is preferablyconfigured from a conductive material having a low work function (forexample, φ=3.5 to 4.5 eV). In particular, alkali metals (for example,Li, Na, K and so forth) and fluorides or oxides of the same, alkalineearth metals (for example, Mg, Ca and so forth) and fluorides or oxidesof the same, aluminum (Al), zinc (Zn), tin (Sn), thallium (Tl),sodium-potassium alloys, aluminum-lithium alloys, magnesium-silveralloys, rare earth metals such as indium and ytterbium, or alloys ofthem are applicable. Alternatively, as a material for configuring ananode or a cathode, conductive materials such as metals includingplatinum (Pt), gold (Au), palladium (Pd), chromium (Cr), nickel (Ni),aluminum (Al), silver (Ag), tantalum (Ta), tungsten (W), copper (Cu),titanium (T), indium (In), tin (Sn), iron (Fe), cobalt (Co), molybdenum(Mo), or alloys containing such metal elements, conductive particlesconfigured from those metals, conductive particles of alloys containingthose metals, polycrystalline silicon containing impurities,carbon-based materials, oxide semiconductors, carbon nanotubes, andgraphene are applicable, and a stacked structure of layers includingthese elements is also applicable. Further, as a material forconfiguring an anode or a cathode, such organic materials (conductivepolymers) as poly(3,4-ethylenedioxythiophene)/polystyrene sulfonic acid[PEDOT/PSS] are applicable. Further, such conductive materials may beused as an electrode by mixing it into a binder (polymer) to form pasteor ink and hardening the paste or ink.

As a film formation method of the first electrode and so forth and thesecond electrode (anode and cathode), a dry method or a wet method canbe used. As the dry method, a physical vapor deposition method (PVDmethod) and a chemical vapor deposition method (CVD method) areapplicable. As a film formation method in which the principle of the PVDmethod is used, a vapor deposition method that uses resistor heating orhigh frequency heating, an EB (electron beam) deposition method, varioussputtering methods (magnetron sputtering method, RF-DC combined biassputtering method, ECR sputtering method, opposed target sputteringmethod, and high frequency sputtering method), an ion plating method, alaser ablation method, a molecular beam epitaxy method, and a lasertransfer method are applicable. Meanwhile, as the CVD method, a plasmaCVD method, a thermal CVD method, an organic metal (MO) CVD method, andan optical CVD method are applicable. On the other hand, as the wet typemethod, such methods as an electroplating method or an electrolessplating method, a spin coating method, an ink jet method, a spraycoating method, a stamp method, a micro contact print method, a flexoprinting method, an offset printing method, a gravure printing method,and a dip method are applicable. As the patterning method, chemicaletching such as shadow mask, laser transfer, or photolithography,physical etching by ultraviolet rays or a laser and so forth areapplicable. As a flattening technology for the first electrode and soforth or the second electrode, a laser flattening method, a reflowmethod, a CMP (Chemical Mechanical Polishing) method and so forth can beused.

As a material for configuring insulating layers, various interlayerinsulating layers, and insulating films, not only inorganic insulatingmaterials exemplified by silicon oxide materials; silicon nitride(SiN_(Y)); and metal oxide high dielectric insulating materials such asaluminum oxide (Al₂O₃), but also polymethylmethacrylate (PMMA);polyvinyl phenol (PVP); polyvinyl alcohol (PVA); polyimide;polycarbonate (PC), polyethylene terephthalate (PET); polystyrene;silanol derivatives (silane coupling agents) such as N-2 (amino ethyl)3-aminopropyltrimethoxysillane (AEAPTMS),3-mercaptpropyltrimethoxysilane (MPTMS), or octadecyltrichlorosilane(OTS); novolac type phenolic resins; fluorine resins; and organicinsulating materials (organic polymers) exemplified by linearhydrocarbons having functional groups that can be attached to thecontrol electrode at one end thereof such as octadecane thiol or dodecylisocyanate are applicable, and also combinations of them can be used. Itis to be noted that, as the silicon oxide materials, silicon oxide(SiO_(X)), BPSG, PSG, BSG, AsSG, PbSG, silicon oxynitride (SiON), SOG(spin-on-glass), and low dielectric materials (for example, polyallylether, cycloperfluorocarbon polymer, and benzocyclobutene, cyclicfluororesin, polytetrafluoroethylene, aryl fluoride ether, polyimidefluoride, amorphous carbon, and organic SOG) can be exemplified.

The configuration and structure of the floating diffusion layer, theamplification transistor, the reset transistor, and the selectiontransistor that configure the control portion can be made similar to theconfiguration and structure of a conventional floating diffusion layer,amplification transistor, reset transistor, and selection transistor.Also, the driving circuit can have a well-known configuration andstructure.

Although the first electrode is connected to the floating diffusionlayer and the gate portion of the amplification transistor, it issufficient if a contact hole portion for the connection between thefirst electrode and the floating diffusion layer and gate portion of theamplification transistor is formed. As the material for configuring thecontact hole portion, polysilicon doped with an impurity, high meltingpoint metals and metal silicide of tungsten, Ti, Pt, Pd, Cu, TiW, TiN,TiNW, WSi₂, MoSi₂ and so forth, and stacked structures (for example,Ti/TiN/W) of layers made of such materials can be exemplified.

A first carrier blocking layer may be provided between the organicphotoelectric conversion layer and the first electrode, and a secondcarrier blocking layer may be provided between the organic photoelectricconversion layer and the second electrode. Further, a first chargeinjection layer may be provided between the first carrier blocking layerand the first electrode, and a second charge injection layer may beprovided between the second carrier blocking layer and the secondelectrode. For example, as the material for configuring the chargeinjection layer, alkali metals such as lithium (Li), sodium (Na), orpotassium (K) and their fluorides and oxides and alkaline earth metalssuch as magnesium (Mg) or calcium (Ca) and their fluorides and oxidesare, for example, applicable.

As the film formation method of the various organic layers, a dry filmformation method and a wet film formation method are applicable. As thedry film formation method, a vacuum deposition method that uses resistorheating, high frequency heating, or electron beam heating, a flashdeposition method, a plasma deposition method, an EB deposition method,various sputtering methods (2-pole sputtering method, a DC sputteringmethod, a DC magnetron sputtering, a high frequency sputtering method, amagnetron sputtering method, an RF-DC combined bias sputtering method,an ECR sputtering method, an opposed target sputtering method, a highfrequency sputtering method, and an ion beam sputtering method), a DC(Direct Current) method, an RF method, a multicathode method, anactivation reaction method, an electric field deposition method, variousion plating methods such as a high frequency ion plating method or areactive ion plating method, a laser ablation method, a molecular beamepitaxy method, a laser transfer method, and a molecular beam epitaxymethod (MBE method) are applicable. Meanwhile, as the CVD method, aplasma CVD method, a thermal CVD method, an MOCVD method, and an opticalCVD method are applicable. On the other hand, as the wet type method, aspin coating method; an immersion method; a cast method; a microcontactprinting method; a drop casting method; various printing methods such asa screen printing method, an ink jet printing method, an offset printingmethod, a gravure printing method, or a flexo printing method; a stampmethod; a spray method; and various coating methods such as an airdoctor coater method, a blade coater method, a rod coater method, aknife coater method, a squeeze coater method, a reverse roll coatermethod, a transfer roll coater method, a gravure coater method, a kisscoater method, a cast coater method, a spray coater method, a slitorifice coater method, or a calendar coater method can be exemplified.It is to be noted that, in the coating method, as a solvent, non-polaror low-polar organic solvents such as toluene, chloroform, hexane, orethanol can be exemplified. As the patterning method, chemical etchingsuch as shadow mask, laser transfer, or photolithography, physicaletching by ultraviolet rays, a laser or the like and so forth areapplicable. As a flattening method for the various organic layers, alaser flattening method, a reflow method and so forth can be used.

Two or more of the imaging devices of the first configuration to thesixth configuration including the preferred forms and configurationsdescribed above can suitably be combined as desired.

In any of the imaging devices or the solid-state image sensors, anon-chip microlens or a shading layer may be provided as described aboveas occasion demands, and a driving circuit and wiring for driving theimaging devices are provided. As occasion demands, a shutter forcontrolling incidence of light to the imaging device may be arranged, oran optical cut filter may be provided according to an object of thesolid-state image sensor.

For example, in the case where a solid-state image sensor is to bestacked with a reading out integrated circuit (ROIC), by placing adriving substrate on which a reading out integrated circuit and aconnection portion made of copper (Co) are formed and an imaging deviceon which a connection portion is formed one on the other such that theconnection portions contact with each other and then joining theconnection portions to each other, they can be stacked, and it is alsopossible to join the connection portions to each other by using solderbumps or the like.

Further, a driving method for driving the solid-state image sensoraccording to any one of the first form and the second form of thepresent disclosure can be made a driving method for a solid-state imagesensor that repeats the steps of

discharging, while charge is accumulated into photoelectric conversionlayers the charge in first electrodes all at once, in all imagingdevices, and then,

transferring the charge accumulated in the photoelectric conversionlayers, all at once, to the first electrodes, in all imaging devices,and sequentially reading out, after completion of the transfer, thecharge transferred to the first electrodes in the imaging devices.

In such a driving method for a solid-state image sensor as describedabove, since each imaging device is structured such that light incidentfrom the second electrode side is not incident to the first electrodeand, while charge is accumulated into the photoelectric conversionlayers, the charge in the first electrodes is discharged to the outsideof the system all at once, in all imaging devices, resetting of thefirst electrode can be performed simultaneously with certainty in allimaging devices. Further, thereafter, the charge accumulated in thephotoelectric conversion layer is transferred all at once in all imagingdevices, and after completion of the transfer, the charge transferred tothe first electrode in each imaging device is read out sequentially.Therefore, what is generally called a global shutter function can beimplemented readily.

WORKING EXAMPLE 1

The working example 1 relates to an imaging device of the presentdisclosure and a solid-state image sensor according to the second formof the present disclosure. An arrangement state of a charge accumulatingelectrode, a first isolation electrode, a second isolation electrode,and a first electrode in the solid-state image sensor of the workingexample 1 are schematically depicted in FIG. 1 . Further, a schematicpartial sectional view of the imaging device and the stacked typeimaging device of the working example 1 is depicted in FIG. 8 , andequivalent circuit diagrams of the imaging device and the stacked typeimaging device of the working example 1 are depicted in each of FIGS. 9and 10 . It is to be noted that FIG. 8 is a schematic partial sectionalview taken along a dot-dash line A-A depicted in FIG. 1 .

It is to be noted that, in order to simplify the drawings, variousimaging device components positioned below an interlayer insulatinglayer hereinafter described are sometimes collectively denoted byreference numeral 91 for the convenience of illustration. Further, inFIG. 1 , a driving circuit (where a value V_(ES-1) is fixed) is added toone imaging device, and another driving circuit (where the valueV_(ES-1) changes to another value V_(ES-1)′) is added to a different oneimaging device.

The imaging device (photoelectric conversion device) 11 of the workingexample 1 includes

a first electrode 21,

a charge accumulating electrode 24 arranged with a space from the firstelectrode 21,

an isolation electrode 30 arranged with a space from the first electrode21 and the charge accumulating electrode 24 and surrounding the chargeaccumulating electrode 24,

a photoelectric conversion layer 23 formed in contact with the firstelectrode 21 and above the charge accumulating electrode 24 with aninsulating layer 82 interposed therebetween, and

a second electrode 22 formed on the photoelectric conversion layer 23,in which

the isolation electrode 30 includes a first isolation electrode 31A anda second isolation electrode 31B arranged with a space from the firstisolation electrode 31A, and

the first isolation electrode 31A is positioned between the firstelectrode 21 and the second isolation electrode 31B.

Further, the solid-state image sensor of the working example 1 includesa stacked type imaging device including at least one imaging device 11of the working example 1. In particular, at least one lower imagingdevice 13 or 15 is provided below the imaging device 11 of the workingexample 1, and the wavelength of light that is received by the imagingdevice 11 and the wavelength of light that is received by the lowerimaging device 13 or 15 are different from each other. In this case, twolower imaging devices 13 and 15 are stacked.

The second electrode 22 positioned on the light incidence side is madecommon to a plurality of imaging devices 11 except the imaging device ofthe working example 3 hereinafter described. In particular, the secondelectrode 22 is what is generally called a solid electrode. Thephotoelectric conversion layer 23 is made common to the plurality ofimaging devices 11. In other words, a single photoelectric conversionlayer 23 is formed for the plurality of imaging devices 11.

The stacked type imaging device of the working example 1 includes atleast one of the imaging device 11 of the working example 1 or animaging device of the working example 3 hereinafter described (inparticular, in the working example 1, the stacked type imaging deviceincludes one imaging device 11 of the working example 1 or one imagingdevice 11 of the working example 3 hereinafter described).

The first isolation electrode 31A and the second isolation electrode 31Bare provided in a region that is opposed to a region of thephotoelectric conversion layer 23 positioned between adjacent ones ofthe imaging devices 11 with an insulating layer 82 interposedtherebetween. In particular, the first isolation electrode 31A and thesecond isolation electrode 31B are a lower first isolation electrode anda lower second isolation electrode, respectively. Although the firstisolation electrode 31A and the second isolation electrode 31B areformed in a level same as that of the first electrode 21 or the chargeaccumulating electrode 24, they may be formed in different levels.

The stacked type imaging device of the working example 1 furtherincludes a control portion provided on a semiconductor substrate andincluding a driving circuit, and the first electrode 21, the secondelectrode 22, the charge accumulating electrode 24, the first isolationelectrode 31A, and the second isolation electrode 31B are connected tothe driving circuit. Wiring connected to the second isolation electrode31B is made common suitably to a plurality of imaging devices such that,for the plurality of imaging devices, the second isolation electrode 31Bis controlled simultaneously. Alternatively, the second isolationelectrode 31B is suitably made common to a plurality of imaging devicessuch that, for the plurality of imaging devices, the second isolationelectrode 31B is controlled simultaneously. On the other hand, the firstisolation electrodes 31A are controlled separately from each other inthe imaging devices.

For example, the first electrode 21 is brought to positive potentialwhile the second electrode 22 is brought to negative potential such thatelectrons generated by photoelectric conversion by the photoelectricconversion layer 23 are read out into a first floating diffusion layerFD₁. This similarly applies to other working examples. It is to be notedthat, in a form in which the first electrode 21 is brought to negativepotential while the second electrode 22 is brought to positive potentialsuch that positive holes generated on the basis of photoelectricconversion by the photoelectric conversion layer 23 are read out intothe first floating diffusion layer FD₁, it is sufficient if the highpotential and the low potential described below are reversed.

Then, during operation of the imaging device 11, that is, during acharge accumulation period, a reset operation period, and a chargetransfer period, the potential of the first isolation electrode 31A hasa fixed value V_(ES-1), and the potential of the second isolationelectrode 31B also has a fixed value V_(ES-2) Alternatively, thepotential of the first isolation electrode 31A changes from the fixedvalue V_(ES-1) to another value V_(ES-1)′ while the potential of thesecond isolation electrode 31B has the fixed value V_(ES-2). Inparticular, during a charge accumulation period and a reset operationperiod, the potential of the first isolation electrode 31A has the fixedvalue V_(ES-1), and during a charge transfer period, the potential ofthe first isolation electrode 31A has the value V_(ES-1)′[EV_(ES-1)′>V_(ES-1), or (V₃₂−V_(ES-1)′)<(V₃₁−V_(ES-1))]) . On the otherhand, during a charge accumulation period, a reset operation period, anda charge transfer period, the potential of the second isolationelectrode 31B has the fixed value V_(ES-2) Further, in those cases,V_(ES-1)>V_(ES-2) is satisfied, or else, V_(ES-2)=V_(ES-1) is satisfied.

It is to be noted that it is possible to obtain each potential to beapplied to various electrodes from a single power supply, by controllingthe voltage using a resistor or the like, and even in a case where adevice (for example, an operational amplifier) that controls the levelof appropriate potential is used, it is possible to obtain eachpotential to be applied to various electrodes from a single powersupply.

Further, the imaging device 11 of the working example 1 further includes

a control portion provided on a semiconductor substrate 70 and includinga driving circuit, in which

the first electrode 21 and the charge accumulating electrode 24 areconnected to the driving circuit,

during a charge accumulation period, from the driving circuit, potentialV₁₁ is applied to the first electrode 21, potential V₃₁ is applied tothe charge accumulating electrode 24, and charge is accumulated into thephotoelectric conversion layer 23,

during a charge transfer period, from the driving circuit, potential V₁₂is applied to the first electrode 21, potential V₃₂ is applied to thecharge accumulating electrode 24, and charge accumulated in thephotoelectric conversion layer 23 is read out into the control portionvia the first electrode 21. However, since the potential of the firstelectrode 21 is set higher than the potential of the second electrode22,

V₃₁≥V₁₁ and V₃₂<V₁₂

are satisfied.

In the following, operation of the solid-state image sensor of theworking example 1 is described with reference to FIGS. 2A, 2B, 3A, 3B,4A, 4B, 5A, 5B, 5C, 6A, and 6B; the reading out method is a first modereading out method. It is to be noted that, in the figures specifiedabove, the potential is indicated by a height in the vertical direction,and as the height decreases, the potential becomes higher.

<Charge Accumulation Period>

In particular, during a charge accumulation period, from the drivingcircuit, the potential V₁₁ is applied to the first electrode 21; thepotential V₃₁ is applied to the charge accumulating electrode 24; thepotential V_(ES-1) is applied to the first isolation electrode 31A; andthe potential V_(ES-2) is applied to the second isolation electrode 31B.Further, the potential V₂₁ is applied to the second electrode 22. Thus,charge (electrons, schematically depicted by black points) isaccumulated into the photoelectric conversion layer 23. An accumulationstate of charge immediately before an end of a charge accumulationperiod is schematically depicted in FIG. 2A or 5A. Electrons generatedby photoelectric conversion are attracted to the charge accumulatingelectrode 24 and stay in a region of the photoelectric conversion layer23 opposed to the charge accumulating electrode 24. In other words,charge is accumulated into the photoelectric conversion layer 23. SinceV₃₁>V₁₁ holds, electrons generated in the inside of the photoelectricconversion layer 23 do not move toward the first electrode 21. Further,since the potential V₃₁ of the charge accumulating electrode 24 ishigher than the potential V_(ES-1) of the first isolation electrode 31Aand the potential V_(ES-2) of the second isolation electrode 31B,electrons generated in the inside of the photoelectric conversion layer23 do not move toward the first isolation electrode 31A and the secondisolation electrode 31B either. In other words, a flow of chargegenerated by photoelectric conversion into an adjacent imaging device 11can be reduced. As the time of photoelectric conversion elapses, thepotential in the region of the photoelectric conversion layer 23 opposedto the charge accumulating electrode 24 has an increasingly negativeside value. At a later stage of the charge accumulation period, resetoperation is performed. Consequently, the potential of the firstfloating diffusion layer FD₁ is reset, and the potential (V_(FD)) of thefirst floating diffusion layer FD₁ becomes the potential V_(DD) of thepower supply.

Here, in the example depicted in FIG. 2A, V_(ES-1)>V_(ES-2) issatisfied, and in the example depicted in FIG. 5A, V_(ES-1)=V_(ES-2) issatisfied.

<Charge Transfer Period>

After completion of the reset operation, a charge transfer period isstarted. During the charge transfer period, from the driving circuit,potential V₁₂ is applied to the first electrode 21; the potential V₃₂ isapplied to the charge accumulating electrode 24; the potential V_(ES-1)or the potential V_(ES-1)′ is applied to the first isolation electrode31A; and the potential V_(ES-2) is applied to the second isolationelectrode 31B. Further, potential V₂₂ is applied to the second electrode22. Thus, charge accumulated in the photoelectric conversion layer 23 ofthe imaging device 11 is read out. An accumulation state of chargeimmediately before an end of the charge transfer period is schematicallydepicted in FIGS. 2B, 3A, 3B, 4A, 4B, 5B, 5B, 6A, and 6B. In particular,electrons staying in the region of the photoelectric conversion layer 23opposed to the charge accumulating electrode 24 are read out to thefirst electrode 21 and further to the first floating diffusion layerFD₁. In other words, the charge accumulated in the photoelectricconversion layer 23 is read out to the control portion. Since thepotential of the first isolation electrode 31A is lower than thepotential of the first electrode 21 but higher than the potential of thecharge accumulating electrode 24, electrons generated in the inside ofthe photoelectric conversion layer 23 flow to the first electrode 21 butdo not move toward the second isolation electrode 31B. In other words, aflow of charge generated by photoelectric conversion into an adjacentimaging device 11 can be reduced.

Here, in the example depicted in FIG. 2B,

V_(FD)>V₁₂=V_(ES-1)>V₃₂>V_(ES-2) and V₃₁>V₃₂

are satisfied. Moreover, in the example depicted in FIG. 3A,

V_(FD)>V₁₂>V_(ES-1)>V₃₂>V_(ES-2) and V₃₁>V₃₂

are satisfied. Further, in the example depicted in FIG. 3B,

V_(FD)>V₁₂>V_(ES-1)′>V₃₂>V_(ES-2), V_(ES-1)′>V_(ES-1), and V₃₁>V₃₂

are satisfied. Further, in the example depicted in FIG. 4A,

V_(FD)>V₁₂=V_(ES-1)′>V₃₂(=V₃₁)>V_(ES-2) and V_(ES-1′)>V_(ES-1)

are satisfied. Further, in the example depicted in FIG. 4B,

V_(FD)>V₁₂>V_(ES-1)′>V₃₂>V_(ES-2), V_(ES-1)′>V_(ES-1), and V₃₁>V₃₂

are satisfied.

In the meantime, in the example depicted in FIG. 5B,

V_(FD)>V₁₂=V_(ES-1)′>V₃₂(=V₃₁)>V_(ES-2)

is satisfied. Further, in the example depicted in FIG. 5C,

V_(FD)>V₁₂>V_(ES-1)′>V₃₂(=V₃₁)>V_(ES-2)

is satisfied. Further, in the example depicted in FIG. 6A,

V_(FD)>V₁₂(=V₁₁)=V_(ES-1)′>V₃₂>V_(ES-2) and V₃₁>V₃₂

are satisfied. Furthermore, in the example depicted in FIG. 6B,

V_(FD)>V₁₂(=V₁₁)>V_(ES-1)′>V₃₂>V_(ES-2) and V₃₁>V₃₂

are satisfied.

Such a series of operation of charge accumulation, reset operation, andcharge transfer as described above are completed with this.

Operation of an amplification transistor TR1 _(amp) and that of aselection transistor TR1 _(sel) after electrons are read into the firstfloating diffusion layer FD₁ are the same as the operation of suchconventional transistors. Such a series of operation as chargeaccumulation, reset operation, and charge transfer of the second imagingdevice 13 and the third imaging device 15 is similar to such aconventional series of operation as charge accumulation, resetoperation, and charge transfer. Reset noise of the first floatingdiffusion layer FD₁ can be removed by a correlated double sampling (CDS,Correlated Double Sampling) process similarly as in the past.

As described above, since, in the imaging device or the solid-stateimage sensor of the working example 1, the isolation electrode includesthe first isolation electrode and the second isolation electrodearranged with a space from the first isolation electrode and the firstisolation electrode is positioned between the first electrode and thesecond isolation electrode, during operation of the imaging device,movement of charge between adjacent imaging devices can be reduced withcertainty under the control of the first isolation electrode and thesecond isolation electrode. Besides, the charge accumulated in thephotoelectric conversion layer can be transferred smoothly to the firstelectrode. Further, improvement of the saturation charge amount in thatthe saturation charge amount does not decrease and a balance betweenreduction of remaining charge upon charge transfer and reduction ofoccurrence of blooming can be achieved, and quality deterioration doesnot occur with a captured video (image).

A view in which part of the electrodes is expanded for illustrating apositional relation of the electrodes in the imaging device of theworking example 1 is depicted in FIG. 7A. Meanwhile, a view in whichpart of the electrodes is expanded for illustrating a positionalrelation of the electrodes in an imaging device in which the firstisolation electrode 31A is not provided is depicted in FIG. 7B. In theexample depicted in FIG. 7B, during a charge transfer period,V₁₂>V₃₂>V_(ES-2) is satisfied. Accordingly, the change of the potentialin a region sandwiched by the first electrode 21 and the chargeaccumulating electrode 24 (in FIGS. 7A and 7B, indicated by a “regionA”) is, as a result of a simulation, such that it decreases once fromthe charge accumulating electrode 24 toward the region A and thenincreases from the region A toward the first electrode 21. In otherwords, in the region A, a potential barrier (in the case where it isviewed from electrons, a “mountain of potential”) electrons cannot getover is generated. Accordingly, there is a possibility that electrons donot move smoothly from the charge accumulating electrode 24 to the firstelectrode 21. On the other hand, in the example depicted in FIG. 7A,during a charge transfer period, the relation ofV₁₂>V_(ES-1)>V₃₂>V_(ES-2) or V₁₂>V_(ES-1)′>V₃₂>V_(ES-2) is satisfied.Accordingly, as a result of a simulation, a result is obtained that thechange of the potential in the region A sandwiched between the firstelectrode 21 and the charge accumulating electrode 24 is a change ofsmoothly increasing from the charge accumulating electrode 24 to theregion A and to the first electrode 21. Accordingly, during operation ofthe imaging device, movement of charge (electrons) between adjacentimaging devices can be reduced with certainty. Besides, chargeaccumulated in the photoelectric conversion layer 23 can be transferredsmoothly to the first electrode 21, and a captured video (image) doesnot suffer from quality deterioration.

Besides, in the imaging device of the working example 1 or of any ofworking examples 2 to 13, since the charge accumulating electrode whichis arranged with a space from the first electrode and is arrangedopposed to the photoelectric conversion layer with the insulating layerinterposed therebetween is provided, when light is applied upon thephotoelectric conversion portion and photoelectrically converted by thephotoelectric conversion portion, a kind of capacitor is formed from thephotoelectric conversion layer, the insulating layer, and the chargeaccumulating electrode, and charge can be stored into the photoelectricconversion layer. Therefore, it is possible to fully empty the chargeaccumulation portion and erase the charge, at the time of start ofexposure. As a result, occurrence of such a phenomenon that kTC noisebecomes high and random noise gets worse, giving rise to degradation ofthe imaging picture quality, can be reduced. Besides, since all pixelscan be reset all at once, what is generally called a global shutterfunction can be implemented.

In the imaging device 11 of the working example 1, in a region opposedto the region 23′ of the photoelectric conversion layer 23 positionedbetween adjacent imaging devices 11 with the insulating layer 82interposed therebetween, the first isolation electrode 31A and thesecond isolation electrode 31B are formed. It is to be noted that thefirst isolation electrode 31A and the second isolation electrode 31B aresometimes collectively referred to as an “isolation electrode 30.” Inother words, an isolation electrode 30 is formed under a portion 82′ ofthe insulating layer 82 in the region sandwiched between a chargeaccumulating electrode 24 and another charge accumulating electrode 24each configuring adjacent imaging devices. The isolation electrode 30 isprovided with a space from the charge accumulating electrode 24 and isprovided with a space also from the first electrode 21. Alternatively,in other words, the isolation electrode 30 is provided with a space fromthe charge accumulating electrode 24 and is arranged opposed to theregion 23′ of the photoelectric conversion layer with the insulatinglayer 82 interposed therebetween.

An imaging device in regard to which the isolation electrode 30 as wellas a connection hole 34, a pad portion 33, and wiring V_(OB) hereinafterdescribed are not depicted is referred to as an “imaging device havingthe basic structure of the present disclosure” for the convenience ofdescription. FIG. 8 is a schematic partial sectional view of the imagingdevice having the basic structure of the present disclosure, and FIGS.16A, 16B, 17A, 17B, 18, 19, 20, 21, 22, 23, 26, 30, 33, 34, 37, 39, 40,42, 43, 44, 45 , 46, and 47 are schematic partial sectional views ofvarious modifications of the imaging device having the basic structureof the present disclosure depicted in FIG. 8 . In the figure,illustration of the isolation electrodes and so forth is omitted.

The imaging device 11 of the working example 1 further includes asemiconductor substrate (more particularly, silicon semiconductor layer)70, and the photoelectric conversion portion is disposed above thesemiconductor substrate 70. The imaging device 11 of the working example1 further includes a control portion that is provided on thesemiconductor substrate 70 and includes a driving circuit to which thefirst electrode 21, the second electrode 22, the charge accumulatingelectrode 24, and the isolation electrode 30 are connected. Here, thelight incidence face of the semiconductor substrate 70 is the upperside, and the opposite side of the semiconductor substrate 70 is thelower side. Below the semiconductor substrate 70, a wiring layer 62including more than one wiring is provided.

On the semiconductor substrate 70, at least a floating diffusion layerFD₁ and an amplification transistor TR1 _(amp) that configure thecontrol portion are provided, and the first electrode 21 is connected tothe floating diffusion layer FD₁ and the gate portion of theamplification transistor TR1 _(amp). On the semiconductor substrate 70,a reset transistor TR1 _(rst) and a selection transistor TR1 _(sel) thatconfigure the control portion are further provided. The floatingdiffusion layer FD₁ is connected to one of the source/drain regions ofthe reset transistor TR1 _(rst), and the other of the source/drainregions of the amplification transistor TR1 _(amp) is connected to theone of the source/drain regions of the selection transistor TR1 _(sel)while the other of the source/drain regions of the selection transistorTR1 _(sel) is connected to a signal line VSL₁. The amplificationtransistor TR1 _(amp), the reset transistor TR1 _(rst), and theselection transistor TR1 _(sel) configure the driving circuit.

In the example depicted, a state in which the floating diffusion layerFD₁ and so forth are provided for one imaging device 11 is illustrated,but in the working example 2 hereinafter described, the floatingdiffusion layer FD₁ and so forth are shared by four imaging devices 11.

In particular, the imaging device and the stacked type imaging device ofthe working example 1 are an imaging device and a stacked type imagingdevice of the back-illuminated type, and are structured such thatstacked are three imaging devices 11, 13, and 15 including a green lightimaging device (hereinafter referred to as a “first imaging device”) ofthe working example 1 of the first type that has sensitivity to greenlight and includes a green light photoelectric conversion layer of thefirst type that absorbs green light, a conventional blue light imagingdevice (hereinafter referred to as a “second imaging device”) of thesecond type that has sensitivity to blue light and includes a blue lightphotoelectric conversion layer that absorbs blue light, and aconventional red light imaging device (hereinafter referred to as a“third imaging device”) of the second type that has sensitivity to redlight and includes a red light photoelectric conversion layer of thesecond type that absorbs red light. Here, the red light imaging device(third imaging device) 15 and the blue light imaging device (secondimaging device) 13 are provided in the semiconductor substrate 70 suchthat the second imaging device 13 is positioned on the light incidenceside with respect to the third imaging device 15. Meanwhile, the greenlight imaging device (first imaging device) 11 is provided above theblue light imaging device (second imaging device) 13. One pixel isconfigured from a stacked structure of the first imaging device 11, thesecond imaging device 13, and the third imaging device 15. No colorfilter is provided.

In the first imaging device 11, the first electrode 21 and the chargeaccumulating electrode 24 are formed with a space between each other onan interlayer insulating layer 81. Further, the isolation electrode 30is formed with a space from the charge accumulating electrode 24 on theinterlayer insulating layer 81. The interlayer insulating layer 81, thecharge accumulating electrode 24, and the isolation electrode 30 arecovered with the insulating layer 82. The photoelectric conversion layer23 is formed on the insulating layer 82, and the second electrode 22 isformed on the photoelectric conversion layer 23. A protective layer 83is formed over an overall area including the second electrode 22, and anon-chip microlens 90 is provided on the protective layer 83. The firstelectrode 21, the charge accumulating electrode 24, the isolationelectrode 30, and the second electrode 22 include, for example, atransparent electrode made of ITO (work function: approximately 4.4 eV).The photoelectric conversion layer 23 includes a layer that contains aknown organic photoelectric conversion material at last havingsensitivity to green light (for example, a rhodamine dye, a melacianinpigment, or an organic material such as quinacridone). In addition, thephotoelectric conversion layer 23 may be configured such that it furtherincludes a material layer suitable for charge accumulation. In otherwords, a material layer suitable for charge accumulation may further beformed between the photoelectric conversion layer 23 and the firstelectrode 21 (for example, in a connection portion 67). The interlayerinsulating layer 81, the insulating layer 82, and the protective layer83 are configured from a known insulating material (for example, SiO₂ orSiN). The photoelectric conversion layer 23 and the first electrode 21are connected to each other by a connection portion 67 provided on theinsulating layer 82. In the connection portion 67, the photoelectricconversion layer 23 extends. In particular, the photoelectric conversionlayer 23 extends in an opening 84 provided in the insulating layer 82and is connected to the first electrode 21.

The charge accumulating electrode 24 is connected to the drivingcircuit. In particular, the charge accumulating electrode 24 isconnected to a vertical driving circuit 112, which configures thedriving circuit, through a connection hole 66 provided in the interlayerinsulating layer 81, a pad portion 64, and wiring V_(OA).

Also the isolation electrode 30 is connected to the driving circuit. Inparticular, the isolation electrode 30 is connected to the verticaldriving circuit 112, which configures the driving circuit, through theconnection hole 34 provided in the interlayer insulating layer 81, thepad portion 33, and the wiring V_(OB). More particularly, the isolationelectrode 30 is formed in a region (region 82′ of the insulating layer)that is opposed to the region 23′ of the photoelectric conversion layer23 with the insulating layer 82 interposed therebetween. In other words,the isolation electrode 30 is provided below the portion 82′ of theinsulating layer 82 in a region sandwiched by a charge accumulatingelectrode 24 and another charge accumulating electrode 24 that eachconfigure adjacent imaging devices. The isolation electrode 30 isprovided with a space from the charge accumulating electrode 24.Alternatively, in other words, the isolation electrode 30 is providedwith a space from the charge accumulating electrode 24, and theisolation electrode 30 is arranged opposed to the region 23′ of thephotoelectric conversion layer 23 with the insulating layer 82interposed therebetween.

The size of the charge accumulating electrode 24 is greater than that ofthe first electrode 21. Where the area of the charge accumulatingelectrode 24 is presented by s₁′ and the area of the first electrode 21is represented by s₁, though not restrictive, it is preferable tosatisfy

4≤s ₁ ′/s ₁,

and in the imaging device of the working example 1 or any of the workingexamples hereinafter described, though not restrictive, for example,

s ₁ ′/s ₁=8

is satisfied. It is to be noted that, in the working examples 7 to 10hereinafter described, the sizes of the three photoelectric conversionportion segments 20 ₁, 20 ₂, and 20 ₃) are made equal to each other andformed so as to have same planar shapes.

A device isolation region 71 is formed on a first face (front face) 70Aside of the semiconductor substrate 70, and further, an oxide film 72 isformed on the first face 70A of the semiconductor substrate 70. Further,the reset transistor TR1 _(rst), the amplification transistor TR1_(amp), and the selection transistor TR1 _(sel) that configure thecontrol portion of the first imaging device 11 are provided on the firstface side of the semiconductor substrate 70, and further, the firstfloating diffusion layer FD₁ is provided.

The reset transistor TR1 _(rst) includes the gate portion 51, a channelformation region 51A, and source/drain regions 51B and 51C. The gateportion 51 of the reset transistor TR1 _(rst) is connected to a resetline RST₁, and one source/drain region 51C of the reset transistor TR1_(rst) serves also as the first floating diffusion layer FD₁, and theother source/drain region 51B is connected to the power supply V.

The first electrode 21 is connected to the one source/drain region 51C(first floating diffusion layer FD₁) of the reset transistor TR1 _(rst)through a connection hole 65 provided in the interlayer insulating layer81, a pad portion 63, a contact hole portion 61 formed in thesemiconductor substrate 70 and the interlayer insulating layer 76, andthe wiring layer 62 formed on the interlayer insulating layer 76.

The amplification transistor TR1 _(amp) includes a gate portion 52, achannel formation region 52A, and source/drain regions 52B and 52C. Thegate portion 52 is connected to the first electrode 21 and the onesource/drain region 51C (first floating diffusion layer FD₁) of thereset transistor TR1 _(rst) through the wiring layer 62. Meanwhile, onesource/drain region 52B is connected to the power supply V.

The selection transistor TR1 _(sel) includes a gate portion 53, achannel formation region 53A, and source/drain regions 53B and 53C. Thegate portion 53 is connected to a selection line SEL₁. Further, onesource/drain region 53B shares a region with the other source/drainregion 53C configuring the amplification transistor TR1 _(amp), and theother source/drain region 53C is connected to the signal line (dataoutput line) VSL₁ (117).

The second imaging device 13 includes, as a photoelectric conversionlayer, an n-type semiconductor region 41 provided on the semiconductorsubstrate 70. A gate portion 45 of a transfer transistor TR2 _(trs)including a vertical transistor extends to the n-type semiconductorregion 41 and is connected to a transfer gate line TG₂. Further, asecond floating diffusion layer FD₂ is provided in a region 45C of thesemiconductor substrate 70 in the proximity of the gate portion 45 ofthe transfer transistor TR2 _(trs). Charge accumulated in the n-typesemiconductor region 41 is read out to the second floating diffusionlayer FD₂ through a transfer channel formed along the gate portion 45.

In the second imaging device 13, a reset transistor TR2 _(rst), anamplification transistor TR2 _(amp), and a selection transistor TR2_(sel) that configure a control portion of the second imaging device 13are further provided on the first face side of the semiconductorsubstrate 70.

The reset transistor TR2 _(rst) includes a gate portion, a channelformation region, and source/drain regions. The gate portion of thereset transistor TR2 _(rst) is connected to a reset line RST₂, and oneof the source/drain regions of the reset transistor TR2 _(rst) isconnected to the power supply V_(DD) while the other of the source/drainregions serves also as the second floating diffusion layer FD₂.

The amplification transistor TR2 _(amp) includes a gate portion, achannel formation region, and source/drain regions. The gate portion isconnected to the other one of the source/drain regions (second floatingdiffusion layer FD₂) of the reset transistor TR2 _(rst). Meanwhile, theone of the source/drain regions of the amplification transistor TR2_(amp) is connected to the power supply V_(DD).

The selection transistor TR2 _(sel) includes a gate portion, a channelformation region, and source/drain regions. The gate portion isconnected to a selection line SEL₂. Meanwhile, one of the source/drainregions shares a region with the other one of the source/drain regionsconfiguring the amplification transistor TR2 _(amp), and the other oneof the source/drain regions of the selection transistor TR2 _(sel) isconnected to a signal line (data output line) VSL₂.

The third imaging device 15 includes, as a photoelectric conversionlayer, an n-type semiconductor region 43 provided on the semiconductorsubstrate 70. A gate portion 46 of a transfer transistor TR3 _(trs) isconnected to a transfer gate line TG₃. Further, a third floatingdiffusion layer FD₃ is provided in a region 46C of the semiconductorsubstrate 70 in the proximity of the gate portion 46 of the transfertransistor TR3 _(trs). Charge accumulated in the n-type semiconductorregion 43 is read out to the third floating diffusion layer FD₃ througha transfer channel 46A formed along the gate portion 46.

In the third imaging device 15, a reset transistor TR3 _(rst), anamplification transistor TR3 _(amp), and a selection transistor TR3_(sel) configuring a control portion of the third imaging device 15 arefurther provided on the first face side of the semiconductor substrate70.

The reset transistor TR3 _(rst) includes a gate portion, a channelformation region, and source/drain regions. The gate portion of thereset transistor TR3 _(rst) is connected to a reset line RST₃, and oneof the source/drain regions of the reset transistor TR3 _(rst) isconnected to the power supply V_(DD) while the other one of thesource/drain region serves also as the third floating diffusion layerFD₃.

The amplification transistor TR3 _(amp) includes a gate portion, achannel formation region, and source/drain regions. The gate portion isconnected to the other one of the source/drain regions (third floatingdiffusion layer FDA of the reset transistor TR3 _(rst). Meanwhile, theone of the source/drain regions of the amplification transistor TR3_(amp) is connected to the power supply V_(DD).

The selection transistor TR3 _(sel) includes a gate portion, a channelformation region, and source/drain regions. The gate portion isconnected to a selection line SEL₃. Meanwhile, one of the source/drainregions of the selection transistor TR3 _(sel) shares a region with theother one of the source/drain regions configuring the amplificationtransistor TR3 _(amp), and the other one of the source/drain regions ofthe selection transistor TR3 _(sel) is connected to a signal line (dataoutput line) VSL₃.

The reset lines RST₁, RST₂, and RST₃, the selection lines SEL₁, SEL₂,and SEL₃, and the transfer gate lines TG₂ and TG₃ are connected to thevertical driving circuit 112 that configures a driving circuit, and thesignal lines (data output lines) VSL₁, VSL₂, and VSL₃ are connected to acolumn signal processing circuit 113 that configures a driving circuit.

A p⁺ layer 44 is provided between the n-type semiconductor region 43 andthe surface 70A of the semiconductor substrate 70 and reduces generationof dark current. Another p⁺ layer 42 is formed between the n-typesemiconductor region 41 and the n-type semiconductor region 43, andfurther, part of a side face of the n-type semiconductor region 43 issurrounded by the p⁺layer 42. A further p⁺ layer 73 is formed on theside of the rear face 70B of the semiconductor substrate 70, and an HfO₂film 74 and an insulating film 75 are formed from the p⁺ layer 73 to aportion at which a contact hole portion 61 in the inside of thesemiconductor substrate 70 is to be formed. Although wiring is formed inthe interlayer insulating layer 76 over a plurality of layers,illustration of such wiring is omitted.

The HfO₂ film 74 is a film having negative fixed charge, and generationof dark current can be reduced by providing such a film as justdescribed. It is to be noted that it is also possible to use, in placeof an HfO₂ film, an aluminum oxide (Al₂O₃) film, a zirconium oxide(ZrO₂) film, a tantalum oxide (Ta₂O₅) film, a titanium oxide (TiO₂)film, a lanthanum oxide (La₂O₃) film, a praseodymium oxide (Pr₂O₃) film,a cerium oxide (CeO₂) film, a neodymium oxide (Nd₂O₃) film, a promethiumoxide (Pm₂O₃) film, a samarium oxide (Sm₂O₃) film, a europium oxide(Eu₂O₃) film, a gadolinium oxide ((Gd₂O₃) film, a terbium oxide (Tb₂O₃)film, a dysprosium oxide (Dy₂O₃) film, a holmium oxide (Ho₂O₃) film, athulium oxide (Tm₂O₃) film, an ytterbium oxide (Yb₂O₃) film, a lutetiumoxide (Lu₂O₃) film, an yttrium oxide (Y₂O₃) film, a hafnium nitridefilm, an aluminum nitride film, a hafnium oxynitride, and an aluminumoxynitride. As a film formation method of the films mentioned, forexample, a CVD method, a PVD method, and an ALD method can be listed.

FIG. 11 depicts a conceptual diagram of the solid-state image sensor ofthe working example 1. The solid-state image sensor 100 of the workingexample 1 includes an imaging region 111 in which stacked type imagingdevices 101 are arrayed in a two-dimensional array and a verticaldriving circuit 112, a column signal processing circuit 113, ahorizontal driving circuit 114, an outputting circuit 115, a drivingcontrolling circuit 116 and so forth as driving circuits (peripheralcircuits). Note that it is a matter of course that the circuits caninclude known circuits and can be configured using other circuitconfigurations (for example, various circuits used in a conventional CCDtype solid-state image sensor or a conventional MOS type solid-stateimage sensor). It is to be noted that the reference numeral “101” isapplied only for one row of the stacked type imaging devices 101 in FIG.11 .

The driving controlling circuit 116 generates a clock signal that servesas a reference for operation of the vertical driving circuit 112, thecolumn signal processing circuit 113, and the horizontal driving circuit114 and control signals for them on the basis of a verticalsynchronizing signal, a horizontal synchronizing signal, and a masterclock. Then, the generated clock signal and control signals are inputtedto the vertical driving circuit 112, the column signal processingcircuit 113, and the horizontal driving circuit 114.

The vertical driving circuit 112 includes, for example, a shift registerand performs selection scanning of the stacked type imaging devices 101of the imaging region 111 sequentially in a unit of row in the verticaldirection. Then, a pixel signal (image signal) based on current (signal)generated according to a received light amount by each stacked typeimaging device 101 is sent to the column signal processing circuit 113through the signal line (data output line) 117 and a VSL.

The column signal processing circuit 113 is arranged, for example, foreach column of the stacked type imaging devices 101 and performs signalprocessing such as noise removal and signal amplification for imagesignals outputted from the stacked type imaging devices 101 for one row,by using a signal from a black reference pixel (though not depicted,formed around the effective pixel region) for each imaging device. Atthe output stage of the column signal processing circuit 113, ahorizontal selection switch (not depicted) is provided in connection toa horizontal signal line 118.

The horizontal driving circuit 114 includes, for example, a shiftregister and sequentially outputs a horizontal scanning pulse tosequentially select the column signal processing circuits 113 such thata signal is outputted from each of the column signal processing circuits113 to the horizontal signal line 118.

The outputting circuit 115 performs signal processing for signalssequentially supplied from the column signal processing circuits 113through the horizontal signal line 118 and outputs a resulting signal.

As indicated by FIG. 12 that depicts an equivalent circuit diagram of amodification (modification 1 of the working example 1) of the imagingdevice and the stacked type imaging device of the working example 1, theother source/drain region 51B of the reset transistor TR1 _(rst) may begrounded instead of being connected to the power supply V_(DD).

The imaging device and the stacked type imaging device of the workingexample 1 can be produced, for example, by the following method. Inparticular, an SOI substrate is prepared first. Then, a first siliconlayer is formed on the surface of the SOI substrate by an epitaxialgrowth method, and a p⁺ layer 73 and an n-type semiconductor region 41are formed on the first silicon layer. Then, a second silicon layer isformed on the first silicon layer by an epitaxial grow method, and adevice isolation region 71, an oxide film 72, a p⁺ layer 42, an n-typesemiconductor region 43, and a p⁺ layer 44 are formed on the secondsilicon layer. Further, various transistors and so forth that configurecontrol portions of imaging devices are formed on the second siliconlayer, and a wiring layer 62, an interlayer insulating layer 76, andvarious kinds of wiring are further formed on them, followed by theinterlayer insulating layer 76 and a support substrate (not depicted)being pasted together. Thereafter, the SOI substrate is removed toexpose the first silicon layer. It is to be noted that the surface ofthe second silicon layer corresponds to a surface 70A of thesemiconductor substrate 70, and the surface of the first silicon layercorresponds to a rear face 70B of the semiconductor substrate 70.Further, the first silicon layer and the second silicon layer arecollectively represented as the semiconductor substrate 70. Then, on therear face 70B side of the semiconductor substrate 70, an opening forforming each contact hole portion 61 is formed, and an HfO₂ film 74, aninsulating film 75, and a contact hole portion 61 are formed. Further,pad portions 63, 64, and 33, an interlayer insulating layer 81,connection holes 65, 66, and 34, first electrodes 21, chargeaccumulating electrodes 24, isolation electrodes 30, and an insulatinglayer 82 are formed. Then, the connection portion 67 is opened, and aphotoelectric conversion layer 23, second electrodes 22, a protectivelayer 83, and on-chip microlenses 90 are formed. By the foregoing, theimaging device and the stacked type imaging device of the workingexample 1 can be obtained.

Alternatively, although a schematic partial sectional view of amodification (modification 2 of the working example 1) of the imagingdevice of the working example 1 (two imaging devices placed side by sideare illustrated) is depicted in FIG. 13 , the photoelectric conversionlayer can be structured in a stacked structure of a lower layersemiconductor layer 23 _(DN) and an upper layer photoelectric conversionlayer 23 _(UP). The upper layer photoelectric conversion layer 23 _(UP)and the lower layer semiconductor layer 23 _(DN) are made common to aplurality of imaging devices. In particular, in a plurality of imagingdevices, the upper layer photoelectric conversion layer 23 _(UP) and thelower layer semiconductor layer 23 _(DN) each in the form of one layerare formed. By providing the lower layer semiconductor layer 23 _(DN) insuch a manner, for example, charge recombination upon chargeaccumulation can be prevented. Further, the charge transfer efficiencyof charge accumulated in the photoelectric conversion layer 23 to thefirst electrode 21 can be increased. Further, charge generated in thephotoelectric conversion layer 23 can be retained temporarily, and thetiming and so forth of transfer of the charge can be controlled.Further, generation of dark current can be suppressed. As regards thematerial for configuring the upper layer photoelectric conversion layer23 _(UP), it is sufficient if it is suitably selected from variousmaterials that configure the photoelectric conversion layer 23. On theother hand, as the material for configuring the lower layersemiconductor layer 23 _(DN), it is preferable to use a material that isa high value of band gap energy (for example, a value of the band gapenergy equal to or higher than 3.0 eV) and is higher in mobility thanthe material configuring the photoelectric conversion layer, andparticularly, for example, an oxide semiconductor material such as IGZOcan be listed. As an alternative, as a material for configuring thelower layer semiconductor layer 23 _(DN), in the case where charge to beaccumulated is electrons, a material having higher ionization potentialthan that of the material configuring the photoelectric conversion layercan be listed. Else, the impurity concentration of a materialconfiguring the lower layer semiconductor layer is preferably equal toor lower than 1×10¹⁸ cm⁻³. It is to be noted that the configuration andthe structure of the modification 2 of the working example 1 can beapplied to other working examples.

WORKING EXAMPLE 2

The working example 2 relates to a solid-state image sensor according tothe first form of the present disclosure. A charge accumulatingelectrode, a first isolation electrode, a second isolation electrode,and an arrangement state of the second isolation electrode and a firstelectrode in the solid-state image sensor of the working example 2 areschematically depicted in FIGS. 14 and 15 . It is to be noted that aschematic partial sectional view of the imaging device and the stackedtype imaging device of the working example 2 is substantially similar tothat of FIG. 8 , and equivalent circuit diagrams of the imaging deviceand the stacked type imaging device of the working example 2 aresubstantially similar to those of FIGS. 9 and 10 . In FIG. 15 , adriving circuit (where it indicates a change from the value V_(ES-1) tothe value V_(ES-1)′) is added to one imaging device block.

The solid-state image sensor of the working example 2 includes

a plurality of imaging device blocks 10 each including P×Q (where P≥2and Q≥1, in the working example 2, P=2 and Q=2) imaging devices(photoelectric conversion devices) where P imaging devices are arrangedin a first direction and Q imaging devices are arranged in a seconddirection different from the first direction, in which

each imaging device 11 includes

a first electrode 21,

a charge accumulating electrode 24 arranged with a space from the firstelectrode 21,

an isolation electrode 30 arranged with a space from the first electrode21 and the charge accumulating electrode 24 and surrounding the chargeaccumulating electrode 24,

a photoelectric conversion layer 23 formed in contact with the firstelectrode 21 and above the charge accumulating electrode 24 with aninsulating layer 82 interposed therebetween, and

a second electrode 22 formed on the photoelectric conversion layer 23,

the isolation electrode 30 includes a first isolation electrode 31A, asecond isolation electrode 31B, and a third isolation electrode 32,

the first isolation electrode 31A is arranged adjacent to but with aspace from the first electrode 21 between imaging devices placed side byside at least along the second direction in the imaging device block,

the second isolation electrode 31B is arranged between imaging devicesin the imaging device block, and

the third isolation electrode 32 is arranged between imaging deviceblocks.

Further, in the solid-state image sensor of the working example 2, thethird isolation electrode 32 is shared by adjacent imaging deviceblocks.

Further, as depicted in FIG. 14 , in the solid-state image sensor of theworking example 2,

the first isolation electrode 31A is arranged adjacent to but with aspace from the first electrode 21 between imaging devices placed side byside along the second direction in the imaging device block, and

the second isolation electrode 31B is arranged between imaging devicesplaced side by side along the first direction and is arranged with aspace from the first isolation electrode 31A between imaging devicesplaced side by side along the second direction. Further, in this case,the second isolation electrode 31B and the third isolation electrode 32are connected to each other.

Otherwise, as depicted in FIG. 15 , in a modification of the solid-stateimage sensor of the working example 2,

the first isolation electrode 31A is arranged adjacent to but with aspace from the first electrode 21 between imaging devices placed side byside along the second direction in the imaging device block and isarranged adjacent to but with a space from the first electrode 21between imaging devices placed side by side along the first direction,and

the second isolation electrode 31B is arranged with a space from thefirst isolation electrode 31A between imaging devices placed side byside along the second direction and is further arranged with a spacefrom the first isolation electrode 31A between imaging devices placedside by side along the first direction. Further, in this case, thesecond isolation electrode 31B and the third isolation electrode 32 areconnected to each other.

The second isolation electrode 31B and the third isolation electrode 32are suitably shared by a plurality of imaging devices, and the secondisolation electrode 31B and the third isolation electrode 32 arecontrolled simultaneously in the plurality of imaging devices. On theother hand, the first isolation electrodes 31A are controlled separatelyin the imaging devices. Depending upon the driving form of thesolid-state image sensor, the first isolation electrodes 31A in theimaging device block are sometimes controlled simultaneously in theplurality of imaging devices.

Also in the solid-state image sensor of the working example 2, similarlyas described hereinabove in connection with the working example 1, thepotential of the first isolation electrode 31A has the fixed valueV_(ES-1) and the potential of the second isolation electrode 31B andthat of the third isolation electrode 32 also have the fixed V_(ES-1),or the potential of the first isolation electrode 31A changes from thefixed value V_(ES-1) (particularly, changes to the fixed value V_(ES-1)′while the potential of the second isolation electrode 31B and that ofthe third isolation electrode 32 have the fixed value V_(ES-2). Then,|V_(ES-2)|>|V_(ES-1)| is satisfied, or |V_(ES-2)|=|V_(ES-1)| issatisfied.

The first isolation electrode 31A, the second isolation electrode 31B,and the third isolation electrode 32 are provided in a region opposed tothe region of the photoelectric conversion layer 23, which is positionedbetween adjacent imaging devices 11, with the insulating layer 82interposed therebetween. In particular, the first isolation electrode31A, the second isolation electrode 31B, and the third isolationelectrode 32 are a lower first isolation electrode, a lower secondisolation electrode, and a lower third isolation electrode,respectively. Although the first isolation electrode 31A, the secondisolation electrode 31B, and the third isolation electrode 32 are formedin a level same as that of the first electrode 21 or the chargeaccumulating electrode 24, they may be formed otherwise in differentlevels.

Further, in the solid-state image sensor of the working example 2, thefirst electrode 21 is shared by P×Q imaging devices configuring animaging device block. Then, each imaging device block includes a controlportion, the control portion includes at least a floating diffusionlayer and an amplification transistor, and the shared first electrode 21is connected to the control portion. By this, the configuration andstructure in the pixel region in which a plurality of imaging devicesare arrayed can be simplified and refined. P×Q imaging devices providedfor one floating diffusion layer may include a plurality of imagingdevices of the first type or may include at least one imaging device ofthe first type and one or two or more imaging devices of the second typehereinafter described.

Further, the solid-state image sensor of the working example 2 includesa stacked type imaging device having at least one imaging device 11described hereinabove in connection with the working example 1. Further,in such a solid-state image sensor of the working example 2 as justdescribed, a lower imaging device block of at least one layer (inparticular, two layers) is provided below the plurality of imagingdevice blocks,

the lower imaging device block includes a plurality of imaging devices(in particular, P×Q imaging devices where P imaging devices are arrangedalong the first direction and Q imaging devices are arranged along thesecond direction), and

the wavelength of light received by the imaging devices configuring theimaging device block and the wavelength of light received by the imagingdevices that configure the lower imaging device block are different fromeach other. A plurality of (in particular, P×Q) imaging devicesconfiguring the lower imaging device block include a shared floatingdiffusion layer. Further, movement of charge accumulated in thephotoelectric conversion layer 23 between imaging devices in adjacentimaging device blocks is inhibited under the control of the thirdisolation electrode 32.

Since operation of the solid-state image sensor of the working example 2can be made substantially similar to operation of the solid-state imagesensor of the working example 1, although detailed description isomitted, in the case of adopting a first mode reading out method inwhich charge accumulated in four imaging devices is read out separatelyby a total of four times under the control of the isolation electrode30, when three of the imaging devices are placed into a chargeaccumulation state while the remaining one imaging device is read out,each potential of the electrodes in the imaging device from which chargeis to be read out is set to V₁₂>V_(ES-1)>V₃₂>V_(ES-2) orV₁₂>V_(ES-1)′>V₃₂>V_(ES-2) and each potential of the electrodes in theimaging devices from which charge is not to be read out is set toV₁₂>V₃₂>V_(ES-1)>V_(ES-2) or V₁₂>V₃₂>V_(ES-1)′>V_(ES-2). It is to benoted that, in FIGS. 5B, 5C, 6A, and 6B, the potential of the chargeaccumulating electrode 24 in such imaging devices from which charge isnot to be read out is indicated by a dot-dash line. In this manner,charge accumulated in the imaging devices from which charge is not to beread out is inhibited from moving to the first electrode 21. Aftercharge reading out of one imaging device is completed, one of theremaining three imaging devices is rendered operative similarly to readout charge. It is sufficient if such operation as just described isperformed a total of four times.

On the other hand, in the case of adopting a second mode reading outmethod in which charge accumulated in four imaging devices is read outsimultaneously by a total of one time, each potential of the electrodesin the four imaging devices that are in a charge accumulation state issimultaneously set to V₁₂>V_(ES-1)>V₃₂>V_(ES-2) orV₁₂>V_(ES-1)′>V₃₂>V_(ES-2). By this, charge accumulated in the fourimaging devices can be moved to the first electrode 21 at the sametiming.

In the solid-state image sensor of the working example 2, since thefirst isolation electrode is arranged adjacent to but with a space fromthe first electrode between imaging devices placed side by side at leastalong the second direction in the imaging device block and the secondisolation electrode is arranged between imaging devices in the imagingdevice block while the third isolation electrode is arranged betweenimaging device blocks, during operation of the imaging device, movementof charge between adjacent imaging devices can be reduced with certaintyunder the control of the first isolation electrode, the second isolationelectrode, and the third isolation electrode. Besides, chargeaccumulated in the photoelectric conversion layer can be transferredsmoothly to the first electrode. Further, improvement of the saturationcharge amount in that the saturation charge amount does not decrease anda balance between reduction of remaining charge upon charge transfer andreduction of occurrence of blooming can be achieved.

WORKING EXAMPLE 3

The working example 3 is a modification of the working examples 1 and 2.The working example 3 can be formed such that the first isolationelectrode 31A and the second isolation electrode 31B or the firstisolation electrode 31A, the second isolation electrode 31B, and thethird isolation electrode 32 are provided with a space from the secondelectrode 22 on the photoelectric conversion layer 23. In other words,the isolation electrodes are upper isolation electrodes.

A schematic partial sectional view of an imaging device (two imagingdevices placed side by side) of the working example 3 is depicted inFIG. 16A. In the imaging device of the working example 3, on the region23′ of the photoelectric conversion layer 23 positioned between adjacentimaging devices, an upper first isolation electrode and an upper secondisolation electrode (that are collectively referred to as an “isolationelectrode 35”) are formed instead of forming the second electrode 22.The isolation electrode 35 is provided with a space from the secondelectrode 22. In other words, the second electrode 22 is provided foreach imaging device, and the isolation electrode 35 is provided on partof the photoelectric conversion layer 23 with a space from the secondelectrode 22 such that it surrounds at least part of the secondelectrode 22. The isolation electrode 35 is formed at a level same asthat of the second electrode 22. It is sufficient if the isolationelectrode 35 has a planar shape similar to that of the isolationelectrode 30, for example.

In particular, an orthogonal projection image of the isolation electrode30 is positioned with a space from orthogonal projection images of thefirst electrode 21 and the charge accumulating electrode 24 andsurrounds the orthogonal projection image of the charge accumulatingelectrode 24, and an orthogonal projection image of the first isolationelectrode 31A is positioned between the orthogonal projection image ofthe first electrode 21 and an orthogonal projection image of the secondisolation electrode 31B. In some cases, part of the orthogonalprojection image of the second isolation electrode 31B and part of theorthogonal projection image of the charge accumulating electrode 24 mayoverlap with each other. Alternatively, the orthogonal projection imageof the first isolation electrode 31A is positioned adjacent to but witha space from the orthogonal projection image of the first electrode 21between imaging devices placed side by side at least along the seconddirection in the imaging device block, and the second isolationelectrode 31B is arranged between imaging devices in the imaging deviceblock while the third isolation electrode 32 is arranged between imagingdevice blocks.

The second electrode 22 and the isolation electrode 35 can be obtainedby first forming a material layer, which is to configure the secondelectrode 22 and the isolation electrode 35, on the photoelectricconversion layer 23 and then patterning the material layer. The secondelectrode 22 and the isolation electrode 35 are connected separately todifferent wiring (not depicted), each of which is connected to thedriving circuit. The wiring connected to the second electrode 22 is madecommon to a plurality of imaging devices. Also the wiring connected tothe isolation electrode 35 is suitably made common to a plurality ofimaging devices similarly to the isolation electrodes describedhereinabove in connection with the working examples 1 and 2.

An insulating film (not depicted) is formed on the photoelectricconversion layer 23 including the second electrode 22 and the isolationelectrode 35, and a contact hole (not depicted) connected to the secondelectrode 22 is formed in the insulating film above the second electrode22. Further, wiring V_(OU) (not depicted) connected to the contact holeis provided on the insulating film.

Also operation of the solid-state image sensor of the working example 3can be made substantially similar to operation of the solid-state imagesensor of the working example 1, and thus, detailed description of theoperation is omitted. Yet, the potential to be applied to the isolationelectrode 35 is set lower than the potential to be applied to the secondelectrode 22.

As described above, in the imaging device of the working example 3,since an isolation electrode is formed, instead of forming the secondelectrode, on a region of the photoelectric conversion layer positionedbetween adjacent imaging devices, a flow of charge generated byphotoelectric conversion into an adjacent imaging device can be reducedby the isolation electrode. Therefore, a captured video (image) does notsuffer from quality deterioration.

A schematic partial sectional view of a modification (modification 1) of(the two imaging devices placed side by side in) the imaging device ofthe working example 3 is depicted in FIG. 16B. In the modification 1,the second electrode 22 is provided for each imaging device, and theisolation electrode 35 is provided with a space from the secondelectrode 22 such that it surrounds at least part of the secondelectrode 22. Below the isolation electrode 35, part of the chargeaccumulating electrode 24 is present, and besides, below the isolationelectrode 35 (upper isolation electrode), an isolation electrode (lowerisolation electrode) 30 is provided. A region of the second electrode 22opposed to the isolation electrode 35 is positioned on the firstelectrode side. The charge accumulating electrode 24 is surrounded bythe isolation electrode 35.

Further, as indicated in FIG. 17A that depicts a schematic partialsectional view of the imaging device (two imaging devices placed side byside) of the working example 3, the second electrode 22 may be dividedinto a plurality of portions, and individually different potential maybe applied to the divisional second electrodes 22. Furthermore, asdepicted in FIG. 17B, an isolation electrode 35 may be provided betweendivided second electrodes 22.

WORKING EXAMPLE 4

The working example 4 is a modification of the working examples 1 to 3.The imaging device and the stacked type imaging device of the workingexample 4 whose schematic partial sectional view is depicted in FIG. 18are an imaging device and a stacked type imaging device of thefront-illuminated type and are structured such that the green lightimaging device of the working example 1 of the first type (first imagingdevice) that has sensitivity to green light and includes a green lightphotoelectric conversion layer of the first type that absorbs greenlight , a conventional blue light imaging device of the second type(second imaging device) that has sensitivity to blue light and includesa blue light photoelectric conversion layer of the second type thatabsorbs blue light, and a conventional red light imaging device of thesecond type (third imaging device) that has sensitivity to red light andincludes a red light photoelectric conversion layer of the second typethat absorbs red light are stacked. Here, the red light imaging device(third imaging device) and the blue light imaging device (second imagingdevice) are provided in the semiconductor substrate 70 such that thesecond imaging device is positioned on the light incidence side withrespect to the third imaging device. Further, the green light imagingdevice (first imaging device) is provided above the blue light imagingdevice (second imaging device).

On the first face 70A side of the semiconductor substrate 70, varioustransistors configuring a control portion are provided similarly as inthe working example 1. The transistors can be configured and structuredsubstantially similarly to the transistors described hereinabove inconnection with the working example 1. Further, although, on thesemiconductor substrate 70, the second imaging device and the thirdimaging device are provided, those imaging devices can also beconfigured and structured substantially similarly to the second imagingdevice and the third imaging device described hereinabove in connectionwith the working example 1.

On the first face 70A of the semiconductor substrate 70, interlayerinsulating layers 77 and 78 are formed, and on the interlayer insulatinglayer 78, the photoelectric conversion portion (first electrode 21,photoelectric conversion layer 23, and second electrode 22) configuringthe imaging device of the working example 1, the charge accumulatingelectrode 24 and so forth are provided.

In such a manner, since, except that the imaging device and the stackedtype imaging device are of the front-illuminated type, the configurationand the structure of the imaging device and the stacked type imagingdevice of the working example 4 can be made similar to the configurationand the structure of the imaging devices and the stacked type imagingdevices of the working examples 1 to 3, detailed description of them isomitted.

WORKING EXAMPLE 5

The working example 5 is a modification of the working examples 1 to 4.

The imaging device and the stacked type imaging device of the workingexample 5 whose schematic partial sectional view is depicted in FIG. 19are an imaging device and a stacked type imaging device of theback-illuminated type and are structured such that two imaging devicesof a first imaging device of the working example 1 of the first type anda second imaging device of the second type are stacked. Further, amodification of the imaging device and the stacked type imaging deviceof the working example 5 whose schematic partial sectional view isdepicted in FIG. 20 are an imaging device and a stacked type imagingdevice of the front-illuminated type and are structured such that afirst imaging device of the working example 1 of the first type and asecond imaging device of the second type are stacked. Here, the firstimaging device absorbs light of a primary color, and the second imagingdevice absorbs light of a complementary color. Alternatively, the firstimaging device absorbs white light, and the second imaging deviceabsorbs infrared light.

A modification of the imaging device of the working example 5 whoseschematic partial sectional view is depicted in FIG. 21 is an imagingdevice of the back-illuminated type and includes a first imaging deviceof the working example 1 of the first type. Meanwhile, a modification ofthe imaging device of the working example 5 whose schematic partialsectional view is depicted in FIG. 22 is an imaging device of thefront-illuminated type and includes a first imaging device of theworking example 1 of the first type. Here, the first imaging deviceincludes three different imaging devices of an imaging device thatabsorbs red light, another imaging device that absorbs green light, anda further imaging device that absorbs blue light.

Further, a solid-state image sensor according to the first form of thepresent disclosure includes a plurality of such imaging devices. Asarrangement of the plurality of such imaging devices, a Bayer array isapplicable. On the light incidence side of each imaging device, colorfilters for spectral separation into blue, green, and red are arrangedas occasion demands.

It is to be noted that it is also possible to use a form in which, inplace of providing one imaging device of the working example 1 of thefirst type, two such imaging devices are stacked (that is, a form inwhich two photoelectric conversion portions are stacked and a controlportion for the two imaging devices is provided on a semiconductorsubstrate) or use another form in which three such imaging devices arestacked (that is, a form in which three photoelectric conversionportions are stacked and a control portion for the three imaging devicesis provided on a semiconductor substrate). Examples of the stackedstructure of an imaging device of the first type and an imaging deviceof the second type are exemplified in the following table.

First type Second type Back-illuminated 1 2 type and front- Green Blue +red illuminated type 1 1 Primary color Complementary color 1 1 WhiteInfrared rays 1 0 Blue or green or red 2 2 Green + infrared light Blue +red 2 1 Green + blue Red 2 0 White + infrared light 3 2 Green + blue +red Blue-green (emerald color) + infrared light 3 1 Green + blue + redInfrared light 3 0 Blue + green + red

WORKING EXAMPLE 6

The working example 6 is a modification of the working examples 1 to 5and relates to the imaging device of the present disclosure thatincludes a transfer controlling electrode (charge transfer electrode). Aschematic partial sectional view of part of an imaging device and astacked type imaging device of the working example 6 is depicted in FIG.23 , and equivalent circuit diagrams of the imaging device and thestacked type imaging device of the working example 6 are depicted ineach of FIGS. 24 and 25 .

The imaging device and the stacked type imaging device of the workingexample 6 further include a transfer controlling electrode (chargetransfer electrode) 25 arranged with a space from the first electrode 21and the charge accumulating electrode 24 between the first electrode 21and the charge accumulating electrode 24 and arranged opposed to thephotoelectric conversion layer 23 with the insulating layer 82interposed therebetween. The transfer controlling electrode 25 isconnected to a pixel driving circuit configuring the driving circuit,through a connection hole 68B, a pad portion 68A, and wiring V_(OT)provided in the interlayer insulating layer 81.

During a charge accumulation period, from the driving circuit, potentialV₁₁ is supplied to the first electrode 21; potential V₃₁ is applied tothe charge accumulating electrode 24; and potential V₄₁ is applied tothe transfer controlling electrode 25. Photoelectric conversion occursin the photoelectric conversion layer 23 by light incident to thephotoelectric conversion layer 23. Positive holes generated by thephotoelectric conversion are sent out from the second electrode 22 tothe driving circuit through wiring V_(OU). On the other hand, since thepotential of the first electrode 21 is set higher than the potential ofthe second electrode 22, that is, since, for example, positive potentialis applied to the first electrode 21 and negative potential is appliedto the second electrode 22, V₃₁>V₄₁ (for example, V₃₁>V₁₁>V₄₁ orV₁₁>V₃₁>V₄₁) is satisfied. Consequently, electrons generated by thephotoelectric conversion are attracted to the charge accumulatingelectrode 24 and stay in the region of the photoelectric conversionlayer 23 opposed to the charge accumulating electrode 24. In otherwords, charge is accumulated into the photoelectric conversion layer 23.Since V₃₁>V₄₁ is satisfied, electrons generated in the inside of thephotoelectric conversion layer 23 can be prevented with certainty frommoving toward the first electrode 21. As time of the photoelectricconversion passes, the value of the potential in the region of thephotoelectric conversion layer 23 opposed to the charge accumulatingelectrode 24 increases to the negative side.

At a later stage of the charge accumulation period, reset operation isperformed. Consequently, the potential of the first floating diffusionlayer FD₁ is reset and the potential of the first floating diffusionlayer FD₁ becomes the potential V_(DD) of the power supply.

After completion of the reset operation, reading out of the charge isperformed. In particular, during a charge transfer period, from thedriving circuit, potential V₁₂ is applied to the first electrode 21;potential V₃₂ is applied to the charge accumulating electrode 24; andpotential V₄₂ is applied to the transfer controlling electrode 25. Here,it is assumed that V₃₂ V₄₂≤V₁₂ is satisfied. By this, electrons stayingin the region of the photoelectric conversion layer 23 opposed to thecharge accumulating electrode 24 are read out with certainty to thefirst electrode 21 and further to the first floating diffusion layerFD₁. In other words, charge accumulated in the photoelectric conversionlayer 23 is read out to the control portion.

With the above, the series of operation of charge accumulation, resetoperation, and charge transfer is completed.

Operation of the amplification transistor TR1 _(amp) and that of theselection transistor TR1 _(sel) after electrons are read out into thefirst floating diffusion layer FD₁ are the same as the operation ofconventional transistors. Further, such a series of operation as chargeaccumulation, reset operation, and charge transfer of the second imagingdevice and the third imaging device is similar to a conventional seriesof operation of charge transfer, reset operation, and charge transfer.

The other source/drain region 51B of the reset transistor TR1 _(rst) maybe grounded instead of being connected to the power supply V_(DD).

WORKING EXAMPLE 7

The working example 7 is a modification of the working examples 1 to 6and relates to an imaging device of the present disclosure that includesa plurality of charge accumulating electrode segments.

A schematic partial sectional view of part of the imaging device of theworking example 7 is depicted in FIG. 26 ; equivalent circuit diagramsof the imaging device and the stacked type imaging device of the workingexample 7 are depicted in FIGS. 27 and 28 ; and a schematic arrangementdiagram of a first electrode and a charge accumulating electrodeconfiguring the imaging device of the working example 7 is depicted inFIG. 29 .

In the working example 7, the charge accumulating electrode 24 includesa plurality of charge accumulating electrode segments 24A, 24B, and 24C.It is sufficient if the number of charge accumulating electrode segmentsis equal to or greater than two, and it is “three” in the workingexample 7. Further, although, in the imaging device and the stacked typeimaging device of the working example 7, different potential is appliedto each of the N charge accumulating electrodes, since the potential ofthe first electrode 21 is higher than the potential of the secondelectrode 22, that is, for example, since positive potential is appliedto the first electrode 21 and negative potential is applied to thesecond electrode 22, during a charge transfer period, the potentialapplied to the charge accumulating electrode segment (firstphotoelectric conversion portion segment) 24A positioned nearest to thefirst electrode 21 is higher than the potential applied to the chargeaccumulating electrode segment (Nth photoelectric conversion portionsegment) 24C located remotest from the first electrode 21. By providinga potential gradient to the charge accumulating electrode 24 in such amanner, electrons staying in the region of the photoelectric conversionlayer 23 opposed to the charge accumulating electrode 24 are read outwith a higher degree of certainty to the first electrode 21 and furtherto the first floating diffusion layer FD₁. In other words, chargeaccumulated in the photoelectric conversion layer 23 is read out intothe control portion.

The other source/drain region 51B of the reset transistor TR1 _(rst) maybe grounded instead of being connected to the power supply V_(DD).

WORKING EXAMPLE 8

The working example 8 is a modification of the working examples 1 to 7and relates to an imaging device of the first configuration and thesixth configuration.

A schematic partial sectional view of the imaging device and the stackedtype imaging device of the working example 8 is depicted in FIG. 30 ,and a schematic partial sectional view in which a portion at which thecharge accumulating electrode, the photoelectric conversion layer, andthe second electrode are stacked is enlarged is depicted in FIG. 31 .

Here, in the imaging device of the working example 8 or in imagingdevices of the working examples 9 to 13 hereinafter described,

the photoelectric conversion portion includes N (where N≥2)photoelectric conversion portion segments (in particular, threephotoelectric conversion portion segments 20 ₁, 20 ₂, and 20 ₃),

the photoelectric conversion layer 23 includes N photoelectricconversion layer segments (in particular, three photoelectric conversionlayer segments 23 ₁, 23 ₂, and 23 ₃),

the insulating layer 82 includes N insulating layer segments (inparticular, three insulating layer segments 82 ₁, 82 ₂, and 82 ₃),

in the working examples 8 to 10, the charge accumulating electrode 24includes N charge accumulating electrode segments (in particular, in theembodiments, three charge accumulating electrode segments 24 ₁, 24 ₂,and 24 ₃),

in the working examples 11 and 12, and in some cases, in the workingexample 10, the charge accumulating electrode 24 includes N chargeaccumulating electrode segments (in particular, three chargeaccumulating electrode segments 24 ₁, 24 ₂, and 24 ₃) arranged with aspace between each other,

the nth (where n=1, 2, 3, . . . , N) photoelectric conversion portionsegment 20 _(n) includes the nth charge accumulating electrode segment24 _(n), the nth insulating layer segment 82 _(n), and the nthphotoelectric conversion layer segment 23 _(n), and

a photoelectric conversion portion segment having a higher value of n ispositioned farther away from the first electrode 21.

Otherwise, the imaging device of the working example 8 or the imagingdevice of each of the working examples 9 and 12 hereinafter described isconfigured such that

it includes a photoelectric conversion portion including a firstelectrode 21, a photoelectric conversion layer 23, and a secondelectrode 22 stacked one on another,

the photoelectric conversion portion further includes a chargeaccumulating electrode 24 that is arranged with a space from the firstelectrode 21 and is arranged opposed to the photoelectric conversionlayer 23 with the insulating layer 82 interposed therebetween, and

where the stacking direction of the charge accumulating electrode 24,the insulating layer 82, and the photoelectric conversion layer 23 isdefined as a Z direction and a direction away from the first electrode21 is defined as an X direction, the sectional area of the stackedportion when the stacked portion at which the charge accumulatingelectrode 24, the insulating layer 82, and the photoelectric conversionlayer 23 are stacked is cut along a YZ virtual plane varies dependingupon the distance from the first electrode 21.

Further, in the imaging device of the working example 8, the thicknessof the insulating layer segment gradually changes over a range from thefirst photoelectric conversion portion segment 20 ₁ to the Nthphotoelectric conversion portion segment 20 _(N). In particular, thethickness of the insulating layer segment gradually increases.Otherwise, in the imaging device of the working example 8, the width ofthe cross section of the stacked portion is fixed, and the thickness ofthe cross section of the stacked portion, particularly the thickness ofthe insulating layer segment, gradually increases depending upon thedistance from the first electrode 21. It is to be noted that thethickness of the insulating layer segment increases stepwise. Thethickness of the insulating layer segment 82 _(n) in the nthphotoelectric conversion portion segment 20 _(n) is fixed. Where thethickness of the insulating layer segment 82 _(n) in the nthphotoelectric conversion portion segment 20 _(n) is represented by “1,”2 to 10 can be exemplified as the thickness of the insulating layersegment 82 _((n+1)) in the (n+1)th photoelectric conversion portionsegment 20 _((n+1)) However, the thickness of the insulating layersegment 82 _(n) is not limited to such a value as just mentioned. In theworking example 8, by gradually reducing the thickness of the chargeaccumulating electrode segments 24 ₁, 24 ₂, and 24 ₃, the thickness ofthe insulating layer segments 82 ₁, 82 ₂, and 82 ₃ is graduallyincreased. The thickness of the photoelectric conversion layer segments23 ₁, 23 ₂, and 23 ₃ is fixed.

In the following, operation of the imaging device of the working example8 is described.

During a charge accumulation period, from the driving circuit, potentialV₁₁ is applied to the first electrode 21, and potential V₃₁ is appliedto the charge accumulating electrode 24. Photoelectric conversion iscaused in the photoelectric conversion layer 23 by light incident to thephotoelectric conversion layer 23.

Positive holes generated by the photoelectric conversion are sent outfrom the second electrode 22 to the driving circuit through the wiringV_(OU). Meanwhile, since the potential of the first electrode 21 is sethigher than the potential of the second electrode 22, that is, sincepositive potential is applied to the first electrode 21 and negativepotential is applied to the second electrode 22, V₃₁>V₁₁, preferablyV₃₁>V₁₁, is satisfied. By this, electrons generated by the photoelectricconversion are attracted to the charge accumulating electrode 24 andstay in the region of the photoelectric conversion layer 23 opposed tothe charge accumulating electrode 24. In other words, charge isaccumulated into the photoelectric conversion layer 23. Since V₃₁>V₁₁ issatisfied, electrons generated in the inside of the photoelectricconversion layer 23 do not move toward the first electrode 21. As timeof the photoelectric conversion passes, the potential of the region ofthe photoelectric conversion layer 23 opposed to the charge accumulatingelectrode 24 comes to have a value increasing to the negative side.

Since the imaging device of the working example 8 adopts theconfiguration that the thickness of the insulating layer segmentgradually increases, if such a state as V₃₁≥V₁₁ appears during a chargeaccumulation period, then the nth photoelectric conversion portionsegment 20 _(n) can accumulate a greater amount of charge than the(n+1)th photoelectric conversion portion segment 20 _((n+1)) and astronger electric field is applied, so that a flow of charge from thefirst photoelectric conversion portion segment 20 ₁ to the firstelectrode 21 can be prevented with certainty.

Reset operation is performed in a later stage of the charge accumulationperiod. By this, the potential of the first floating diffusion layer FD₁is reset, and the potential of the first floating diffusion layer FD₁becomes the potential V_(DD) of the power supply.

After completion of the reset operation, reading out of charge isperformed. In particular, during a charge transfer period, from thedriving circuit, potential V₁₂ is applied to the first electrode 21, andpotential V₃₂ is applied to the charge accumulating electrode 24. Here,it is assumed that V₁₂>V₃₂ holds. By this, electrons staying in theregion of the photoelectric conversion layer 23 opposed to the chargeaccumulating electrode 24 are read out into the first electrode 21 andfurther into the first floating diffusion layer FD₁. In other words,charge accumulated in the photoelectric conversion layer 23 is read outinto the control portion.

More particularly, if such a state as V₁₂>V₃₂ appears during a chargetransfer period, a flow of charge from the first photoelectricconversion portion segment 20 ₁ to the first electrode 21 and a flow ofcharge from the (n+1)th photoelectric conversion portion segment 20_((n+1)) to the nth photoelectric conversion portion segment 20 _(n) canbe assured with certainty.

Such a series of operation as charge accumulation, reset operation, andcharge transfer is completed therewith.

In the imaging device of the working example 8, since the thickness ofthe insulating layer segment gradually changes over a range from thefirst photoelectric conversion portion segment to the Nth photoelectricconversion portion segment, or since the sectional area of the stackedportion when the stacked portion at which the charge accumulatingelectrode, the insulating layer, and the photoelectric conversion layerare stacked is cut along a YZ virtual plane changes depending upon thedistance from the first electrode, a kind of charge transfer gradient isformed, and charge generated by photoelectric conversion can betransferred more easily and with certainty.

Since the imaging device and the stacked type imaging device of theworking example 8 can be produced by a substantially similar method tothat of the imaging device of the working example 1, detaileddescription of the method is omitted.

It is to be noted that, in the imaging device of the working example 8,in forming the first electrode 21, the charge accumulating electrode 24,and the insulating layer 82, a conductive material layer for forming thecharge accumulating electrode 24 ₃ is formed on an interlayer insulatinglayer 81 first and is then patterned such that the conductive materiallayer is left in regions in which the photoelectric conversion portionsegments 20 ₁, 20 ₂, and 20 ₃ and the first electrode 21 are to beformed and that part of the first electrode 21 and the chargeaccumulating electrode 24 ₃ can be obtained. Then, an insulating layerfor forming the insulating layer segment 82 ₃ is formed over an overallarea and is patterned, and then, a flattening process is performed, sothat the insulating layer segment 82 ₃ can be obtained. Then, aconductive material layer for forming the charge accumulating electrode24 ₂ is formed over an overall area and is patterned such that theconductive material layer is left in regions in which the photoelectricconversion portion segments 20 ₁ and 20 ₂ and the first electrode 21 areto be formed, whereby part of the first electrode 21 and the chargeaccumulating electrode 24 ₂ can be obtained. Then, an insulating layerfor forming the insulating layer segment 82 ₂ is formed over an overallarea and is patterned, and then, a flattening process is performed, sothat the insulating layer segment 82 ₂ can be obtained. Then, aconductive material layer for forming the charge accumulating electrode24 ₁ is formed and patterned such that the conductive material layer isleft in regions in which the photoelectric conversion portion segment 20₁ and the first electrode 21 are to be formed, whereby the firstelectrode 21 and the charge accumulating electrode 24 ₁ can be obtained.Then, an insulating layer is formed over an overall area and aflattening process is performed, so that the insulating layer segment 82₁ (insulating layer 82) can be obtained. Then, the photoelectricconversion layer 23 is formed on the insulating layer 82. Thephotoelectric conversion portion segments 20 ₁, 20 ₂, and 20 ₃ can beobtained in such a manner.

The other source/drain region 51B of the reset transistor TR1 _(rst) maybe grounded instead of being connected to the power supply V_(DD).

WORKING EXAMPLE 9

The imaging device of the working example 9 relates to an imaging deviceof the second configuration and the sixth configuration of the presentdisclosure. As illustrated in FIG. 32 that depicts a schematic partialsectional view in which a portion at which the charge accumulatingelectrode, the photoelectric conversion layer, and the second electrodeare stacked is depicted in an enlarged scale, in the imaging device ofthe working example 9, the thickness of the photoelectric conversionlayer segment gradually changes over a range from the firstphotoelectric conversion portion segment 20 ₁ to the Nth photoelectricconversion portion segment 20 _(N). Otherwise, in the imaging device ofthe working example 9, the width of the cross section of the stackedportion is fixed while the thickness of the cross section of the stackedportion, particularly the thickness of the photoelectric conversionlayer segment, is gradually increased depending upon the distance fromthe first electrode 21. More particularly, the thickness of thephotoelectric conversion layer segment is gradually increased. It is tobe noted that the thickness of the photoelectric conversion layersegment is increased stepwise. The thickness of the photoelectricconversion layer segment 23 _(n) in the nth photoelectric conversionportion segment 20 _(n) is fixed. Where the thickness of thephotoelectric conversion layer segment 23 _(n) in the nth photoelectricconversion portion segment 20 _(n) is “1,” 2 to 10 can be exemplified asthe thickness of the photoelectric conversion layer segment 23 _((n+1))in the (n+1)th photoelectric conversion portion segment 20 _((n+1))However, the thickness is not limited to such values as just mentioned.In the working example 9, by gradually reducing the thickness of thecharge accumulating electrode segments 24 ₁, 24 ₂, and 24 ₃, thethickness of the photoelectric conversion layer segments 23 ₁, 23 ₂, and23 ₃ is gradually increased. The thickness of the insulating layersegments 82 ₁, 82 ₂, and 82 ₃ is fixed.

In the imaging device of the working example 9, since the thickness ofthe photoelectric conversion layer segment gradually increases, if sucha state as V₃₁≥V₁₁ is entered during a charge accumulation period, thena stronger electric field is applied to the nth photoelectric conversionportion segment 20 _(n) than to the (n+1)th photoelectric conversionportion segment 20 _((n+1)), and a flow of charge from the firstphotoelectric conversion portion segment 20 ₁ to the first electrode 21can be prevented with certainty. Then, if such a state as V₃₂<V₁₂ isentered during a charge transfer period, then a flow of charge from thefirst photoelectric conversion portion segment 20 ₁ to the firstelectrode 21 and a flow of charge from the (n+1)th photoelectricconversion portion segment 20 _((n+1)) to the nth photoelectricconversion portion segment 20 _(n) can be assured with certainty.

In such a manner, in the imaging device of the working example 9, sincethe thickness of the photoelectric conversion layer segment changesgradually over a range from the first photoelectric conversion portionsegment to the Nth photoelectric conversion portion segment, or else,since the sectional area of the stacked portion when the stacked portionat which the charge accumulating electrode, the insulating layer, andthe photoelectric conversion layer are stacked is cut along the YZvirtual plane changes depending upon the distance from the firstelectrode, a kind of charge transfer gradient is formed, and chargegenerated by the photoelectric conversion can be transferred morereadily and with certainty.

In the imaging device of the working example 9, in forming the firstelectrode 21, the charge accumulating electrode 24, the insulating layer82, and the photoelectric conversion layer 23, first, a conductivematerial layer for forming the charge accumulating electrode 24 ₃ isformed on an interlayer insulating layer 81 and is patterned such thatthe conductive material layer is left in regions in which thephotoelectric conversion portion segments 20 ₁, 20 ₂, and 20 ₃ and thefirst electrode 21 are to be formed, whereby part of the first electrode21 and the charge accumulating electrode 24 ₃ can be obtained. Then, aconductive material layer for forming the charge accumulating electrode24 ₂ is formed on an overall area and is patterned such that theconductive material layer is left in regions in which the photoelectricconversion portion segments 20 ₁ and 20 ₂ and the first electrode 21 areto be formed, whereby part of the first electrode 21 and the chargeaccumulating electrode 24 ₂ can be obtained. Then, a conductive materiallayer for forming the charge accumulating electrode 24 ₁ is formed overan overall area and is patterned such that the conductive material layeris left in regions in which the photoelectric conversion portion segment20 ₁ and the first electrode 21 are to be formed, whereby the firstelectrode 21 and the charge accumulating electrode 24 ₁ can be obtained.Then, the insulating layer 82 is formed conformally over an overallarea. Then, the photoelectric conversion layer 23 is formed on theinsulating layer 82, and a flattening process is applied to thephotoelectric conversion layer 23. In such a manner, the photoelectricconversion portion segments 20 ₁, 20 ₂, and 20 ₃ can be obtained.

WORKING EXAMPLE 10

The working example 10 relates to an imaging device of the thirdconfiguration. A schematic partial sectional view of the imaging deviceand the stacked type imaging device of the working example 10 isdepicted in FIG. 33 . In the imaging device of the working example 10,the material configuring the insulating layer segment is differentbetween adjacent photoelectric conversion portion segments. Here, thevalue of the relative permittivity of a material configuring theinsulating layer segment gradually decreases over a range from the firstphotoelectric conversion portion segment 20 ₁ to the Nth photoelectricconversion portion segment 20 _(N). In the imaging device of the workingexample 10, the same potential may be applied to all of the N chargeaccumulating electrode segments or different potential may be applied toeach of the N charge accumulating electrode segments. In the lattercase, it is sufficient if the charge accumulating electrode segments 24₁, 24 ₂, and 24 ₃ arranged with a space between each other are connectedto the vertical driving circuit 112 configuring the driving circuit,through pad portions 64 ₁, 64 ₂, and 64 ₃, respectively, similarly as inthe description of the working example 11.

Then, by adopting such a configuration as described above, a kind ofcharge transfer gradient is formed, and if such a state as V₃₁≥V₁₁ isentered during a charge accumulation period, then the nth photoelectricconversion portion segment can accumulate a greater amount of chargethan the (n+1)th photoelectric conversion portion segment. Then, if sucha state of V₃₂<V₁₂ is entered during a charge transfer period, then aflow of charge from the first photoelectric conversion portion segmentto the first electrode and a flow of charge from the (n+1)thphotoelectric conversion portion segment to the nth photoelectricconversion portion segment can be assured with certainty.

WORKING EXAMPLE 11

The working example 11 relates to an imaging device of the fourthconfiguration. A schematic partial sectional view of the imaging deviceand the stacked type imaging device of the working example 11 isdepicted in FIG. 34 . In the imaging device of the working example 11,the material configuring the charge accumulating electrode segment isdifferent between adjacent photoelectric conversion portion segments.Here, the value of the work function of the material configuring theinsulating layer segment is gradually made higher over a range from thefirst photoelectric conversion portion segment 20 ₁ to the Nthphotoelectric conversion portion segment 20 _(N). In the imaging deviceof the working example 11, the same potential may be applied to all ofthe N charge accumulating electrode segments or different potential maybe applied to each of the N charge accumulating electrode segments. Inthe latter case, the charge accumulating electrode segments 24 ₁, 24 ₂,and 24 ₃ are connected to the vertical driving circuit 112 configuringthe driving circuit, through pad portions 64 ₁, 64 ₂, and 64 ₃,respectively.

WORKING EXAMPLE 12

The imaging device of the working example 12 relates to an imagingdevice of the fifth configuration. Schematic plan views of a chargeaccumulating electrode segment in the working example 12 are depicted inFIGS. 35A, 35B, 36A, and 36B. A schematic partial sectional view of theimaging device and the stacked type imaging device of the workingexample 12 is similar to that depicted in FIG. 34 or FIG. 37 . In theimaging device of the working example 12, the area of the chargeaccumulating electrode segment gradually decreases over a range from thefirst photoelectric conversion portion segment 20 ₁ to the Nthphotoelectric conversion portion segment 20 _(N). In the imaging deviceof the working example 12, the same potential may be applied to all ofthe N charge accumulating electrode segments or different potential maybe applied to each of the N charge accumulating electrode segments. Inparticular, it is sufficient if the charge accumulating electrodesegments 24 ₁, 24 ₂, and 24 ₃ arranged with a space between each otherare connected to the vertical driving circuit 112 configuring thedriving circuit, through the pad portions 64 ₁, 64 ₂, and 64 ₃,respectively, similarly as in the description of the working example 11.

In the working example 12, the charge accumulating electrode 24 includesa plurality of charge accumulating electrode segments 24 ₁, 24 ₂, and 24₃. It is sufficient if the number of charge accumulating electrodesegments is equal to or greater than two, and it is three, in theworking example 12. Further, in the imaging device and the stacked typeimaging device of the working example 12, since the potential of thefirst electrode 21 is higher than the potential of the second electrode22, that is, since, for example, positive potential is applied to thefirst electrode 21 and negative potential is applied to the secondelectrode 22, during a charge transfer period, the potential applied tothe charge accumulating electrode segment 24 ₁ positioned nearest to thefirst electrode 21 is higher than the potential applied to the chargeaccumulating electrode segment 24 ₃ positioned remotest from the firstelectrode 21. By providing a potential gradient to the chargeaccumulating electrode 24 in such a manner, electrons staying in theregion of the photoelectric conversion layer 23 opposed to the chargeaccumulating electrode 24 are read out with a higher degree of certaintyto the first electrode 21 and further to the first floating diffusionlayer FD₁. In other words, charge accumulated in the photoelectricconversion layer 23 is read out to the control portion.

Then, during a charge transfer period, by setting such that thepotential of the charge accumulating electrode segment 24 ₃<potential ofthe charge accumulating electrode segment 24 ₂<potential of the chargeaccumulating electrode segment 24 ₁ holds, electrons staying in theregion of the photoelectric conversion layer 23 can be read out all atonce to the first floating diffusion layer FD₁. Else, during a chargetransfer period, since the potential of the charge accumulatingelectrode segment 24 ₃, the potential of the charge accumulatingelectrode segment 24 ₂, and the potential of the charge accumulatingelectrode segment 24 ₁ are gradually changed (that is, are changedstepwise or in a slope), electrons staying in the region of thephotoelectric conversion layer 23 opposed to the charge accumulatingelectrode segment 24 ₃ can be moved into the region of the photoelectricconversion layer 23 opposed to the charge accumulating electrode segment24 ₂, electrons staying in the region of the photoelectric conversionlayer 23 opposed to the charge accumulating electrode segment 24 ₂ canbe moved into the region of the photoelectric conversion layer 23opposed to the charge accumulating electrode segment 24 ₁, and then,electrons staying in the region of the photoelectric conversion layer 23opposed to the charge accumulating electrode segment 24 ₁ can be readout into the first floating diffusion layer FD1 with certainty.

The other source/drain region 51B of the reset transistor TR3 _(rst) maybe grounded instead of being connected to the power supply V_(DD).

Also in the imaging device of the working example 12, by adopting such aconfiguration as described above, a kind of charge transfer gradient isformed. In particular, since the area of the charge accumulatingelectrode segment gradually decreases over a range from the firstphotoelectric conversion portion segment 20 ₁ to the Nth photoelectricconversion portion segment 20 _(N), if such a state as V₃₁≥V₁₁ isentered during a charge accumulation period, then the nth photoelectricconversion portion segment can accumulate a greater amount of chargethan the (n+1)th photoelectric conversion portion segment. Then, if sucha state as V₃₂<V₁₂ is entered during a charge transfer period, then aflow of charge from the first photoelectric conversion portion segmentto the first electrode and a flow of charge from the (n+1)thphotoelectric conversion portion segment to the nth photoelectricconversion portion segment can be assured with certainty.

WORKING EXAMPLE 13

The working example 13 relates to an imaging device of the sixthconfiguration. A schematic partial sectional view of the imaging deviceand the stacked type imaging device of the working example 13 isdepicted in FIG. 37 . Further, schematic plan views of a chargeaccumulating electrode segment in the working example 13 are depicted inFIGS. 38A and 38B. The imaging device of the working example 13 includesa photoelectric conversion portion in which a first electrode 21, aphotoelectric conversion layer 23, and a second electrode 22 arestacked, and the photoelectric conversion portion further includes acharge accumulating electrode 24 arranged with a space from the firstelectrode 21 and arranged opposed to the photoelectric conversion layer23 with an insulating layer 82 interposed therebetween. Further, wherethe stacking direction of the charge accumulating electrode 24, theinsulating layer 82, and the photoelectric conversion layer 23 isdefined as a Z direction and a direction away from the first electrode21 is defined as an X direction, the sectional area of the stackedportion when the stacked portion at which the charge accumulatingelectrode 24, the insulating layer 82, and the photoelectric conversionlayer 23 are stacked is cut along a YZ virtual plane changes dependingupon the distance from the first electrode 21.

In particular, in the imaging device of the working example 13, thethickness of the cross section of the stacked portion is fixed and thewidth of the cross section of the stacked portion decreases as thedistance from the first electrode 21 increases. It is to be noted thatthe width may decrease continuously (refer to FIG. 38A) or may decreasestepwise (refer to FIG. 38B).

In such a manner, in the imaging device of the working example 12, sincethe sectional area of the stacked portion when the stacked portion atwhich the charge accumulating electrode 24, the insulating layer 82, andthe photoelectric conversion layer 23 are stacked is cut along a YZvirtual plane changes depending upon the distance from the firstelectrode, a kind of charge transfer gradient is formed, and chargegenerated by photoelectric conversion can be transferred more easily andwith certainty.

Although the present disclosure is described above on the basis of thepreferred working examples, the present disclosure is not limited to theworking examples described. The structures and configurations,production conditions, production methods, and used materials of theimaging devices, stacked type imaging device, and solid-state imagesensors described in connection with the working examples are exemplaryand can be changed suitably. The imaging devices of the working examplescan be combined suitably. For example, the imaging device of the workingexample 8, the imaging device of the working example 9, the imagingdevice of the working example 10, the imaging device of the workingexample 11, and the imaging device of the working example 12 can becombined optionally, and the imaging device of the working example 8,the imaging device of the working example 9, the imaging device of theworking example 10, the imaging device of the working example 11, andthe imaging device of the working example 13 can be combined optionally.

Although, in the working examples, one imaging device block includes 2×2imaging devices, the number of one imaging device block is not limitedto this, and it is also possible to have one imaging device blockinclude, for example, 2×1 imaging devices, 3×3 imaging devices, 4×4imaging devices or the like. The first direction may be a row directionor a column direction in an imaging device array of the solid-stateimage sensor.

In some cases, it is also possible to cause the floating diffusionlayers FD₁, FD₂, and FD₃, the one source/drain region 51C of the resettransistor TR1 _(rst), the region 45C of the semiconductor substrate 70in the proximity of the gate portion 45 of the transfer transistor TR2_(trs), and the region 46C of the semiconductor substrate 70 in theproximity of the gate portion 46 of the transfer transistor TR3 _(trs)to be shared by a plurality of imaging devices.

As depicted in FIG. 39 that illustrates, for example, a modification ofthe imaging device and the stacked type imaging device described inconnection with the working example 1, the first electrode 21 can beconfigured such that it extends in an opening 84A provided in theinsulating layer 82 and is connected to the photoelectric conversionlayer 23.

Alternatively, where, as depicted in FIG. 40 that illustrates amodification of, for example, the imaging device and the stacked typeimaging device described hereinabove in connection with the workingexample 1 and FIG. 41A that is a schematic partial sectional viewillustrating a portion of the first electrode and so forth in anenlarged scale, an edge portion of a top face of the first electrode 21is covered with the insulating layer 82, and the first electrode 21 isexposed on a bottom face of an opening 84B. Where a face of theinsulating layer 82 contacting with the top face of the first electrode21 is a first face 82 p while a face of the insulating layer 82contacting with a portion of the photoelectric conversion layer 23opposed to the charge accumulating electrode 24 is a second face 82 q, aside face of the opening 84B has an inclination that expands from thefirst face 82 p toward the second face 82 q. By providing an inclinationto the side face of the opening 84B in such a manner, movement of chargefrom the photoelectric conversion layer 23 to the first electrode 21becomes further smoother. It is to be noted that, although, in theexample depicted in FIG. 41A, the side face of the opening 84B isrotationally symmetric with respect to the axial line of the opening 84Bas a center, an opening 84C may be provided such that the side face ofthe opening 84C having an inclination that expands from the first face82 p toward the second face 82 q is positioned on the chargeaccumulating electrode 24 side, as depicted in FIG. 41B. By this,movement of charge from a portion of the photoelectric conversion layer23 on the opposite side of the charge accumulating electrode 24 acrossthe opening 84C becomes less likely to be performed. Further, althoughthe side face of the opening 84B has an inclination that expands fromthe first face 82 p toward the second face 82 q, an edge portion of theside face of the opening 84B at the second face 82 q may be positionedon the outer side than an edge portion of the first electrode 21 asdepicted in FIG. 41A or may be positioned on the inner side than an edgeportion of the first electrode 21 as depicted in FIG. 41C. Where theformer configuration is adopted, transfer of charge becomes furthereasier, and where the latter configuration is adopted, the dispersion inshape upon formation of the openings can be reduced.

Such openings 84B and 84C as described above can each be formed byreflowing an etching mask made of a resist material that is formed whenthe opening is formed in an insulating layer by an etching method, toprovide an inclination to an opening side face of the etching mask, andthen etching the insulating layer 82 by using the etching mask.

Further, as depicted in FIG. 42 that illustrates a modification of theimaging device and the stacked type imaging device describedhereinabove, for example, in connection with the working example 1, theimaging device and the stacked type imaging device can be configuredsuch that light is incident from the side of the second electrode 22 anda shading layer 92 is formed on the light incidence side from the secondelectrode 22. It is to be noted that it is also possible to causevarious kinds of wiring provided on the light incidence side withrespect to the light photoelectric conversion layer to function as ashading layer.

It is to be noted that, although, in the example depicted in FIG. 42 ,the shading layer 92 is formed above the second electrode 22, that is,although the shading layer 92 is formed above the first electrode 21 onthe light incidence side from the second electrode 22, it may otherwisebe arranged on a face of the second electrode 22 on the light incidenceside as depicted in FIG. 43 . Further, in some cases, the shading layer92 may be formed on the second electrode 22 as depicted in FIG. 44 .

Alternatively, it is also possible to adopt such a structure that lightis incident from the second electrode 22 side while light is notincident to the first electrode 21. In particular, as depicted in FIG.42 , a shading layer 92 is formed above the first electrode 21 and onthe light incidence side from the second electrode 22. Alternatively, asdepicted in FIG. 46 , such a structure in which an on-chip microlens 90is provided above the charge accumulating electrode 24 and the secondelectrode 22 such that light incident to the on-chip microlens 90 isfocused on the charge accumulating electrode 24 and does not reach thefirst electrode 21 may be used. It is to be noted that, in the casewhere the transfer controlling electrode 25 is provided as describedhereinabove in connection with the working example 6, it is possible toadopt a form in which light is not incident to the first electrode 21and the transfer controlling electrode 25, and particularly, it is alsopossible to adopt a structure in which the shading layer 92 is formedabove the first electrode 21 and the transfer controlling electrode 25as depicted in FIG. 45 . Alternatively, it is also possible to adopt astructure in which light incident to the on-chip microlens 90 does notreach the first electrode 21 or the first electrode 21 and the transfercontrolling electrode 25.

By adopting such configurations or structures as described above, or byproviding the shading layer 92 or designing the on-chip microlens 90such that light is incident only to a portion of the photoelectricconversion layer 23 positioned above the charge accumulating electrode24, a portion of the photoelectric conversion layer 23 that ispositioned above the first electrode 21 (or above the first electrode 21and the transfer controlling electrode 25) does not contribute tophotoelectric conversion. Therefore, all pixels can be reset all at oncewith a higher degree of accuracy, and a global shutter function can beimplemented more easily. In particular, in a driving method for asolid-state image sensor that includes a plurality of imaging deviceshaving such configurations or structures as described above, steps of

discharging, in all imaging devices, while charge is accumulated intothe photoelectric conversion layer 23, charge in the first electrode 21to the outside of the system all at once, and then

transferring, in all imaging devices, the charge accumulated in thephotoelectric conversion layer 23 to the first electrode 21, all atonce, and sequentially reading out, after completion of the transfer,the transferred charge to the first electrode 21 in each imaging device.

In such a driving method for a solid-state image sensor, each imagingdevice is structured such that light incident from the second electrodeside is not incident to the first electrode, and in all imaging devices,while charge is accumulated into the photoelectric conversion layer,charge in the first electrode is discharged to the outside of the systemall at once. Thus, in all imaging devices, resetting of the firstelectrode can be performed all at once with certainty. Thereafter, inall imaging devices, charge accumulated in the photoelectric conversionlayer is transferred to the first electrode all at once, and aftercompletion of the transfer, the charge accumulated in the firstelectrode in each imaging device is read out sequentially. Therefore,what is generally called a global shutter function can be implementedreadily.

Further, as a modification of the working example 6, a plurality oftransfer controlling electrodes may be provided from a position nearestto the first electrode 21 toward the charge accumulating electrode 24 asdepicted in FIG. 47 . It is to be noted that FIG. 47 depicts an examplein which two transfer controlling electrodes 25A and 25B are provided.Further, it is possible to adopt a structure in which, above the chargeaccumulating electrode 24 and the second electrode 22, an on-chipmicrolens 90 is provided such that light incident to the on-chipmicrolens 90 is focused on the charge accumulating electrode 24 and doesnot reach the first electrode 21 and the transfer controlling electrodes25A and 25B.

In the working example 8 depicted in FIGS. 30 and 31 , the thickness ofthe charge accumulating electrode segments 24 ₁, 24 ₂, and 24 ₃ isgradually decreased to gradually increase the thickness of theinsulating layer segments 82 ₁, 82 ₂, and 82 ₃. On the other hand, asdepicted in FIG. 48 that is a schematic partial sectional viewillustrating a portion at which the charge accumulating electrode, thephotoelectric conversion layer, and the second electrode are stacked inthe modification of the working example 8 in an enlarged scale, thethickness of the charge accumulating electrode segments 24 ₁, 24 ₂, and24 ₃ may be fixed while the thickness of the insulating layer segments82 ₁, 82 ₂, and 82 ₃ is gradually increased. It is to be noted that thethickness of the photoelectric conversion layer segments 23 ₁, 23 ₂, and23 ₃ is fixed.

Further, in the working example 9 depicted in FIG. 32 , the thickness ofthe photoelectric conversion layer segments 23 ₁, 23 ₂, and 23 ₃ isgradually increased by gradually decreasing the thickness of the chargeaccumulating electrode segments 24 ₁, 24 ₂, and 24 ₃. On the other hand,as depicted in FIG. 49 that illustrates a schematic partial sectionalview in which a portion at which the charge accumulating electrode, thephotoelectric conversion layer, and the second electrode in themodification of the working example 9 are stacked is depicted in anenlarged scale, the thickness of the photoelectric conversion layersegments 23 ₁, 23 ₂, and 23 ₃ may be gradually increased by making thethickness of the charge accumulating electrode segments 24 ₁, 24 ₂, and24 ₃ fixed and gradually decreasing the thickness of the insulatinglayer segments 82 ₁, 82 ₂, and 82 ₃.

In the imaging device and the solid-state image sensor describedhereinabove in connection with the working example 1, the secondisolation electrode 31B is suitably made common to a plurality ofimaging devices, and the second isolation electrode 31B may becontrolled simultaneously in the plurality of imaging devices. FIG. 50schematically depicts an arrangement state of the charge accumulatingelectrode, the first isolation electrode, the second isolationelectrode, and the first electrode in such a modification of thesolid-state image sensor of the working example 1 as just described.

An arrangement state of the charge accumulating electrode, the firstisolation electrode, the second isolation electrode, and the firstelectrode in further modifications of the imaging device describedhereinabove in connection with the working example 1 is schematicallydepicted in FIGS. 51A and 51B. In those modifications, the planar shapeof the charge accumulating electrode 24 is a rectangle having fourcorner portions, and a corner portion opposed to the first electrode 21is cut away. Further, in the example depicted in FIG. 51A, a portion ofthe first isolation electrode 31A opposed to the first electrode 21extends into the cutaway portion of the charge accumulating electrode24. Further, in the example depicted in FIG. 51B, the first isolationelectrode 31A is positioned between the first electrode 21 and thecutaway portion of the charge accumulating electrode 24. By adoptingsuch a structure as just described, the potential between the chargeaccumulating electrode 24 and the first electrode 21 can be controlledwith a higher degree of accuracy. It is to be noted that themodifications described can be applied to the working example 2 or otherworking examples.

An arrangement state of the charge accumulating electrode, the firstisolation electrode, the second isolation electrode, the third isolationelectrode, and the first electrode in the further modification of theimaging device described hereinabove in connection with the workingexample 2 is schematically depicted in FIG. 52 . In those modifications,the planar shape of the charge accumulating electrode 24 is a rectanglehaving four corner portions, and a corner portion opposed to the firstelectrode 21 is cut away. Further, the first isolation electrode 31A ispositioned between the first electrode 21 and the cutaway portion of thecharge accumulating electrode 24. Further, the first isolationelectrodes 31A configuring the imaging devices are connected to eachother. By adopting such a structure as just described, the potentialbetween the charge accumulating electrode 24 and the first electrode 21can be controlled with a higher degree of accuracy. It is to be notedthat the modifications described can be applied to other workingexamples.

A further modification of the solid-state image sensor describedhereinabove in connection with the working example 2 is depicted in FIG.53 . In particular, in four imaging devices, a single common firstelectrode 21 is provided for the four charge accumulating electrodes 24,and an isolation electrode 30 (first isolation electrode 31A, secondisolation electrode 31B, and third isolation electrode 32) is formedunder a portion of the insulating layer 82 in a region surrounded by thefour charge accumulating electrodes 24. Further, a charge dischargingelectrode 26 is formed under a portion of the insulating layer 82 in theregion surrounded by the four charge accumulating electrodes 24. Thecharge discharging electrode 26 and the photoelectric conversion layer23 are connected to each other through an opening provided in theinsulating layer 82. In particular, similarly to the relation betweenthe photoelectric conversion layer 23 and the first electrode 21, thephotoelectric conversion layer 23 extends in the opening provided in theinsulating layer 82, and this extension of the photoelectric conversionlayer 23 contacts with the charge discharging electrode 26. Such acharge discharging electrode 26 as just described can be applied also toother working examples.

Alternatively, a schematic plan view of the first electrode and thecharge accumulating electrode in a further modification of thesolid-state image sensor of the working example 2 is depicted in FIG. 54. In this solid-state image sensor, an imaging device block includes twoimaging devices. Further, one on-chip microlens 90 is arranged above theimaging device block. The first isolation electrode 31A and the secondisolation electrode 31B are arranged between the two imaging devicesthat configure the imaging device block, and the third isolationelectrode 32 is arranged between imaging device blocks.

For example, a photoelectric conversion layer corresponding to chargeaccumulating electrodes 24 ₁₁, 24 ₂₁, 24 ₃₁, and 24 ₄₁ that configure animaging device block has high sensitivity to incident light from theupper right in the figure. Further, a photoelectric conversion layercorresponding to charge accumulating electrodes 24 ₁₂, 24 ₂₂, 24 ₃₂, and24 ₄₂ configuring an imaging device block has high sensitivity toincident light from the upper left in the figure. Accordingly, forexample, by combining an imaging device having the charge accumulatingelectrode 24 ₁₁ and an imaging device having the charge accumulatingelectrode 24 ₂₁, it becomes possible to acquire an image plane phasedifference signal. Further, if a signal from the imaging device havingthe charge accumulating electrode 24 ₁₁ and a signal from the imagingdevice having the charge accumulating electrode 24 ₁₂ are added, by acombination with those imaging devices, one imaging device can beconfigured.

FIG. 55A depicts an example of reading out driving of the imaging deviceblock of the working example 2 depicted in FIG. 54 . Signals from thetwo imaging devices corresponding to the charge accumulating electrode24 ₂₁ and the charge accumulating electrode 24 ₂₂ are read out by a flowof the following:

[Step A]

Auto zero signal inputting to a comparator

[Step B]

Reset operation of a shared single floating diffusion layer

[Step C]

P phase reading out in the imaging device corresponding to the chargeaccumulating electrode 24 ₂₁ and movement of charge to a first electrode21 ₂

[Step D]

D phase reading out in the imaging device corresponding to the chargeaccumulating electrode 24 ₂₁ and movement of charge to the firstelectrode 21 ₂

[Step E]

Reset operation of the shared single floating diffusion layer

[Step F]

Auto zero signal inputting to the comparator

[Step G]

P phase reading out in the imaging device corresponding to the chargeaccumulating electrode 24 ₂₂ and movement of charge to the firstelectrode 21 ₂

[Step H]

D phase reading out in the imaging device corresponding to the chargeaccumulating electrode 24 ₂₂ and movement of charge to the firstelectrode 21 ₂. On the basis of a correlated double sampling (CDS), thedifference between the P phase reading out in [Step C] and the D phasereading out in [Step D] is a signal from the imaging devicecorresponding to the charge accumulating electrode 24 ₂₁, and thedifference between the P phase reading out in [Step G] and the D phasereading out in [Step H] is a signal from the imaging devicecorresponding to the charge accumulating electrode 24 ₂₂.

It is to be noted that the operation of [Step E] may be omitted (referto FIG. 55B). Further, the operation of [Step F] may be omitted, and inthis case, [Step G] can be omitted further (refer to FIG. 55C). Thedifference between the P phase reading out in [Step C] and the D phasereading out in [Step D] is a signal from the imaging devicecorresponding to the charge accumulating electrode 24 ₂₁, and thedifference between the D phase reading out in [Step D] and the D phasereading out in [Step H] is a signal from the imaging devicecorresponding to the charge accumulating electrode 24 ₂₂.

It is to be noted that operation of the imaging device block includingthe two imaging devices depicted in FIG. 54 is not limited to theoperation described above, and it is also possible for the operation ofthe imaging device block to be similar to the operation of the imagingdevice block including four imaging devices described hereinabove inconnection with the working example 2.

It is a matter of course that the various modifications of the workingexamples described above can be applied suitably to other workingexamples.

Although, in the working examples, electrons are signal charge and theconductivity type of a photoelectric conversion layer formed on asemiconductor substrate is the n type, application to a solid-stateimage sensor in which positive holes are signal charge is also possible.In this case, it is sufficient if the semiconductor regions includesemiconductor regions of the opposite conductivity types, and it issufficient if the conductivity type of the photoelectric conversionlayer formed on a semiconductor substrate is the p type.

Further, although the working examples are described taking, as anexample, a case in which the present disclosure is applied to a CMOStype solid-state image sensor in which unit pixels that detect signalcharge according to an incident light amount as a physical quantity arearranged in rows and columns, application of the present disclosure isnot limited to a CMOS type solid-state image sensor, and it is alsopossible to apply the present disclosure to a CCD type solid-state imagesensor. In the latter case, signal charge is transferred in a verticaldirection by a vertical transfer register of the CCD type structure,transferred in a horizontal direction by a horizontal transfer register,and is amplified to output a pixel signal (image signal). Further, theapplication of the present disclosure is not limited to column typesolid-state image sensors in general in which pixels are formed in atwo-dimensional matrix and a column signal processing circuit isarranged for each pixel column. Further, in some cases, it is alsopossible to omit the selection transistor.

Further, the imaging device and the stacked type imaging device of thepresent disclosure can be applied not only to a solid-state image sensorthat detects and captures distribution of the incident light amount ofvisible light as an image but also to a solid-state image sensor thatcaptures distribution of the incident amount of infrared rays, X-rays,or particles as an image. Further, in a broad sense, the imaging deviceand the stacked type imaging device of the present disclosure can beapplied to solid-state image sensors (physical quantity distributiondetection devices) in general such as fingerprint detection sensors thatdetect and capture distribution of some other physical quantity such aspressure or capacitance as an image.

Further, application of the imaging device and the stacked type imagingdevice of the present disclosure is not limited to a solid-state imagesensor that scans unit pixels in an imaging region in order in a unit ofrow to read out a pixel signal from each unit pixel. The imaging deviceand the stacked type imaging device of the present disclosure can beapplied also to a solid-state image sensor of the X-Y address type thatselects any pixel in a unit of pixel and reads out a pixel signal in aunit of pixel from the selected pixel. The solid-state image sensor mayhave a form that it is formed as one chip or may have a form of a modulein which an imaging region and a driving circuit or an optical systemare collectively packaged so as to have an imaging function.

Further, the application of the imaging device and the stacked typeimaging device of the present disclosure is not limited to a solid-stateimage sensor and can be applied also to an imaging apparatus. Here, theimaging apparatus signifies electronic equipment having an imagingfunction such as a camera system of a digital still camera or a videocamera or a portable telephone set. The imaging apparatus sometimes havea form of a module incorporated in electronic equipment, that is, animaging apparatus sometimes includes a camera module.

An example in which a solid-state image sensor 201 including the imagingdevice and the stacked type imaging device of the present disclosure isused in electronic equipment (camera) 200 is depicted as a conceptualdiagram in FIG. 56 . The electronic equipment 200 includes a solid-stateimage sensor 201, an optical lens 210, a shutter device 211, a drivingcircuit 212, and a signal processing circuit 213. The optical lens 210forms an image of image light (incident light) from an imaging target onan imaging plane of the solid-state image sensor 201. As a result,signal charge is accumulated for a fixed period of time in thesolid-state image sensor 201. The shutter device 211 controls the lightapplication period and the light blocking period of the solid-stateimage sensor 201. The driving circuit 212 supplies a driving signal forcontrolling transfer operation and so forth of the solid-state imagesensor 201 and shutter operation of the shutter device 211. In responseto a driving signal (timing signal) supplied from the driving circuit212, signal transfer of the solid-state image sensor 201 is performed.The signal processing circuit 213 performs various signal processes. Avideo signal for which signal processing has been performed is storedinto a storage medium such as a memory or is outputted to a monitor. Inthe electronic equipment 200 as described above, since refinement of thepixel size and improvement of the transfer efficiency of the solid-stateimage sensor 201 can be achieved, the electronic equipment 200 whoseimprovement in pixel characteristic is achieved can be obtained. Theelectronic equipment 200 to which the solid-state image sensor 201 canbe applied is not limited to a camera and can be applied to an imagingapparatus such as a camera module for mobile equipment such as a digitalstill camera or a portable telephone set.

The technology according to the present disclosure (present technology)can be applied to various products. For example, the technologyaccording to the present disclosure may be implemented as an apparatusthat is incorporated in a moving body of any kind such as an automobile,an electric car, a hybrid electric car, a motorcycle, a bicycle, apersonal mobility, an airplane, a drone, a ship, or a robot.

FIG. 58 is a block diagram depicting an example of schematicconfiguration of a vehicle control system as an example of a mobile bodycontrol system to which the technology according to an embodiment of thepresent disclosure can be applied.

The vehicle control system 12000 includes a plurality of electroniccontrol units connected to each other via a communication network 12001.In the example depicted in FIG. 58 , the vehicle control system 12000includes a driving system control unit 12010, a body system control unit12020, an outside-vehicle information detecting unit 12030, anin-vehicle information detecting unit 12040, and an integrated controlunit 12050. In addition, a microcomputer 12051, a sound/image outputsection 12052, and a vehicle-mounted network interface (I/F) 12053 areillustrated as a functional configuration of the integrated control unit12050.

The driving system control unit 12010 controls the operation of devicesrelated to the driving system of the vehicle in accordance with variouskinds of programs. For example, the driving system control unit 12010functions as a control device for a driving force generating device forgenerating the driving force of the vehicle, such as an internalcombustion engine, a driving motor, or the like, a driving forcetransmitting mechanism for transmitting the driving force to wheels, asteering mechanism for adjusting the steering angle of the vehicle, abraking device for generating the braking force of the vehicle, and thelike.

The body system control unit 12020 controls the operation of variouskinds of devices provided to a vehicle body in accordance with variouskinds of programs. For example, the body system control unit 12020functions as a control device for a keyless entry system, a smart keysystem, a power window device, or various kinds of lamps such as aheadlamp, a backup lamp, a brake lamp, a turn signal, a fog lamp, or thelike. In this case, radio waves transmitted from a mobile device as analternative to a key or signals of various kinds of switches can beinput to the body system control unit 12020. The body system controlunit 12020 receives these input radio waves or signals, and controls adoor lock device, the power window device, the lamps, or the like of thevehicle.

The outside-vehicle information detecting unit 12030 detects informationabout the outside of the vehicle including the vehicle control system12000. For example, the outside-vehicle information detecting unit 12030is connected with an imaging section 12031. The outside-vehicleinformation detecting unit 12030 makes the imaging section 12031 imagean image of the outside of the vehicle, and receives the imaged image.On the basis of the received image, the outside-vehicle informationdetecting unit 12030 may perform processing of detecting an object suchas a human, a vehicle, an obstacle, a sign, a character on a roadsurface, or the like, or processing of detecting a distance thereto.

The imaging section 12031 is an optical sensor that receives light, andwhich outputs an electric signal corresponding to a received lightamount of the light. The imaging section 12031 can output the electricsignal as an image, or can output the electric signal as informationabout a measured distance. In addition, the light received by theimaging section 12031 may be visible light, or may be invisible lightsuch as infrared rays or the like.

The in-vehicle information detecting unit 12040 detects informationabout the inside of the vehicle. The in-vehicle information detectingunit 12040 is, for example, connected with a driver state detectingsection 12041 that detects the state of a driver. The driver statedetecting section 12041, for example, includes a camera that images thedriver. On the basis of detection information input from the driverstate detecting section 12041, the in-vehicle information detecting unit12040 may calculate a degree of fatigue of the driver or a degree ofconcentration of the driver, or may determine whether the driver isdozing.

The microcomputer 12051 can calculate a control target value for thedriving force generating device, the steering mechanism, or the brakingdevice on the basis of the information about the inside or outside ofthe vehicle which information is obtained by the outside-vehicleinformation detecting unit 12030 or the in-vehicle information detectingunit 12040, and output a control command to the driving system controlunit 12010. For example, the microcomputer 12051 can perform cooperativecontrol intended to implement functions of an advanced driver assistancesystem (ADAS) which functions include collision avoidance or shockmitigation for the vehicle, following driving based on a followingdistance, vehicle speed maintaining driving, a warning of collision ofthe vehicle, a warning of deviation of the vehicle from a lane, or thelike.

In addition, the microcomputer 12051 can perform cooperative controlintended for automatic driving, which makes the vehicle to travelautonomously without depending on the operation of the driver, or thelike, by controlling the driving force generating device, the steeringmechanism, the braking device, or the like on the basis of theinformation about the outside or inside of the vehicle which informationis obtained by the outside-vehicle information detecting unit 12030 orthe in-vehicle information detecting unit 12040.

In addition, the microcomputer 12051 can output a control command to thebody system control unit 12020 on the basis of the information about theoutside of the vehicle which information is obtained by theoutside-vehicle information detecting unit 12030. For example, themicrocomputer 12051 can perform cooperative control intended to preventa glare by controlling the headlamp so as to change from a high beam toa low beam, for example, in accordance with the position of a precedingvehicle or an oncoming vehicle detected by the outside-vehicleinformation detecting unit 12030.

The sound/image output section 12052 transmits an output signal of atleast one of a sound and an image to an output device capable ofvisually or auditorily notifying information to an occupant of thevehicle or the outside of the vehicle. In the example of FIG. 58 , anaudio speaker 12061, a display section 12062, and an instrument panel12063 are illustrated as the output device. The display section 12062may, for example, include at least one of an on-board display and ahead-up display.

FIG. 59 is a diagram depicting an example of the installation positionof the imaging section 12031.

In FIG. 59 , the imaging section 12031 includes imaging sections 12101,12102, 12103, 12104, and 12105.

The imaging sections 12101, 12102, 12103, 12104, and 12105 are, forexample, disposed at positions on a front nose, sideview mirrors, a rearbumper, and a back door of the vehicle 12100 as well as a position on anupper portion of a windshield within the interior of the vehicle. Theimaging section 12101 provided to the front nose and the imaging section12105 provided to the upper portion of the windshield within theinterior of the vehicle obtain mainly an image of the front of thevehicle 12100. The imaging sections 12102 and 12103 provided to thesideview mirrors obtain mainly an image of the sides of the vehicle12100. The imaging section 12104 provided to the rear bumper or the backdoor obtains mainly an image of the rear of the vehicle 12100. Theimaging section 12105 provided to the upper portion of the windshieldwithin the interior of the vehicle is used mainly to detect a precedingvehicle, a pedestrian, an obstacle, a signal, a traffic sign, a lane, orthe like.

Incidentally, FIG. 59 depicts an example of photographing ranges of theimaging sections 12101 to 12104. An imaging range 12111 represents theimaging range of the imaging section 12101 provided to the front nose.Imaging ranges 12112 and 12113 respectively represent the imaging rangesof the imaging sections 12102 and 12103 provided to the sideviewmirrors. An imaging range 12114 represents the imaging range of theimaging section 12104 provided to the rear bumper or the back door. Abird's-eye image of the vehicle 12100 as viewed from above is obtainedby superimposing image data imaged by the imaging sections 12101 to12104, for example.

At least one of the imaging sections 12101 to 12104 may have a functionof obtaining distance information. For example, at least one of theimaging sections 12101 to 12104 may be a stereo camera constituted of aplurality of imaging elements, or may be an imaging element havingpixels for phase difference detection.

For example, the microcomputer 12051 can determine a distance to eachthree-dimensional object within the imaging ranges 12111 to 12114 and atemporal change in the distance (relative speed with respect to thevehicle 12100) on the basis of the distance information obtained fromthe imaging sections 12101 to 12104, and thereby extract, as a precedingvehicle, a nearest three-dimensional object in particular that ispresent on a traveling path of the vehicle 12100 and which travels insubstantially the same direction as the vehicle 12100 at a predeterminedspeed (for example, equal to or more than 0 km/hour). Further, themicrocomputer 12051 can set a following distance to be maintained infront of a preceding vehicle in advance, and perform automatic brakecontrol (including following stop control), automatic accelerationcontrol (including following start control), or the like. It is thuspossible to perform cooperative control intended for automatic drivingthat makes the vehicle travel autonomously without depending on theoperation of the driver or the like.

For example, the microcomputer 12051 can classify three-dimensionalobject data on three-dimensional objects into three-dimensional objectdata of a two-wheeled vehicle, a standard-sized vehicle, a large-sizedvehicle, a pedestrian, a utility pole, and other three-dimensionalobjects on the basis of the distance information obtained from theimaging sections 12101 to 12104, extract the classifiedthree-dimensional object data, and use the extracted three-dimensionalobject data for automatic avoidance of an obstacle. For example, themicrocomputer 12051 identifies obstacles around the vehicle 12100 asobstacles that the driver of the vehicle 12100 can recognize visuallyand obstacles that are difficult for the driver of the vehicle 12100 torecognize visually. Then, the microcomputer 12051 determines a collisionrisk indicating a risk of collision with each obstacle. In a situationin which the collision risk is equal to or higher than a set value andthere is thus a possibility of collision, the microcomputer 12051outputs a warning to the driver via the audio speaker 12061 or thedisplay section 12062, and performs forced deceleration or avoidancesteering via the driving system control unit 12010. The microcomputer12051 can thereby assist in driving to avoid collision.

At least one of the imaging sections 12101 to 12104 may be an infraredcamera that detects infrared rays. The microcomputer 12051 can, forexample, recognize a pedestrian by determining whether or not there is apedestrian in imaged images of the imaging sections 12101 to 12104. Suchrecognition of a pedestrian is, for example, performed by a procedure ofextracting characteristic points in the imaged images of the imagingsections 12101 to 12104 as infrared cameras and a procedure ofdetermining whether or not it is the pedestrian by performing patternmatching processing on a series of characteristic points representingthe contour of the object. When the microcomputer 12051 determines thatthere is a pedestrian in the imaged images of the imaging sections 12101to 12104, and thus recognizes the pedestrian, the sound/image outputsection 12052 controls the display section 12062 so that a squarecontour line for emphasis is displayed so as to be superimposed on therecognized pedestrian. The sound/image output section 12052 may alsocontrol the display section 12062 so that an icon or the likerepresenting the pedestrian is displayed at a desired position.

Further, for example, the technology according to the present disclosuremay be applied to an endoscopic surgery system.

FIG. 60 is a view depicting an example of a schematic configuration ofan endoscopic surgery system to which the technology according to anembodiment of the present disclosure (present technology) can beapplied.

In FIG. 60 , a state is illustrated in which a surgeon (medical doctor)11131 is using an endoscopic surgery system 11000 to perform surgery fora patient 11132 on a patient bed 11133. As depicted, the endoscopicsurgery system 11000 includes an endoscope 11100, other surgical tools11110 such as a pneumoperitoneum tube 11111 and an energy device 11112,a supporting arm apparatus 11120 which supports the endoscope 11100thereon, and a cart 11200 on which various apparatus for endoscopicsurgery are mounted.

The endoscope 11100 includes a lens barrel 11101 having a region of apredetermined length from a distal end thereof to be inserted into abody cavity of the patient 11132, and a camera head 11102 connected to aproximal end of the lens barrel 11101. In the example depicted, theendoscope 11100 is depicted which includes as a rigid endoscope havingthe lens barrel 11101 of the hard type. However, the endoscope 11100 mayotherwise be included as a flexible endoscope having the lens barrel11101 of the flexible type.

The lens barrel 11101 has, at a distal end thereof, an opening in whichan objective lens is fitted. A light source apparatus 11203 is connectedto the endoscope 11100 such that light generated by the light sourceapparatus 11203 is introduced to a distal end of the lens barrel 11101by a light guide extending in the inside of the lens barrel 11101 and isirradiated toward an observation target in a body cavity of the patient11132 through the objective lens. It is to be noted that the endoscope11100 may be a forward-viewing endoscope or may be an oblique-viewingendoscope or a side-viewing endoscope.

An optical system and an image pickup element are provided in the insideof the camera head 11102 such that reflected light (observation light)from the observation target is condensed on the image pickup element bythe optical system. The observation light is photo-electricallyconverted by the image pickup element to generate an electric signalcorresponding to the observation light, namely, an image signalcorresponding to an observation image. The image signal is transmittedas RAW data to a CCU 11201.

The CCU 11201 includes a central processing unit (CPU), a graphicsprocessing unit (GPU) or the like and integrally controls operation ofthe endoscope 11100 and a display apparatus 11202. Further, the CCU11201 receives an image signal from the camera head 11102 and performs,for the image signal, various image processes for displaying an imagebased on the image signal such as, for example, a development process(demosaic process).

The display apparatus 11202 displays thereon an image based on an imagesignal, for which the image processes have been performed by the CCU11201, under the control of the CCU 11201.

The light source apparatus 11203 includes a light source such as, forexample, a light emitting diode (LED) and supplies irradiation lightupon imaging of a surgical region to the endoscope 11100.

An inputting apparatus 11204 is an input interface for the endoscopicsurgery system 11000. A user can perform inputting of various kinds ofinformation or instruction inputting to the endoscopic surgery system11000 through the inputting apparatus 11204. For example, the user wouldinput an instruction or a like to change an image pickup condition (typeof irradiation light, magnification, focal distance or the like) by theendoscope 11100.

A treatment tool controlling apparatus 11205 controls driving of theenergy device 11112 for cautery or incision of a tissue, sealing of ablood vessel or the like. A pneumoperitoneum apparatus 11206 feeds gasinto a body cavity of the patient 11132 through the pneumoperitoneumtube 11111 to inflate the body cavity in order to secure the field ofview of the endoscope 11100 and secure the working space for thesurgeon. A recorder 11207 is an apparatus capable of recording variouskinds of information relating to surgery. A printer 11208 is anapparatus capable of printing various kinds of information relating tosurgery in various forms such as a text, an image or a graph.

It is to be noted that the light source apparatus 11203 which suppliesirradiation light when a surgical region is to be imaged to theendoscope 11100 may include a white light source which includes, forexample, an LED, a laser light source or a combination of them. Where awhite light source includes a combination of red, green, and blue (RGB)laser light sources, since the output intensity and the output timingcan be controlled with a high degree of accuracy for each color (eachwavelength), adjustment of the white balance of a picked up image can beperformed by the light source apparatus 11203.

Further, in this case, if laser beams from the respective RGB laserlight sources are irradiated time-divisionally on an observation targetand driving of the image pickup elements of the camera head 11102 arecontrolled in synchronism with the irradiation timings. Then imagesindividually corresponding to the R, G and B colors can be also pickedup time-divisionally. According to this method, a color image can beobtained even if color filters are not provided for the image pickupelement.

Further, the light source apparatus 11203 may be controlled such thatthe intensity of light to be outputted is changed for each predeterminedtime. By controlling driving of the image pickup element of the camerahead 11102 in synchronism with the timing of the change of the intensityof light to acquire images time-divisionally and synthesizing theimages, an image of a high dynamic range free from underexposed blockedup shadows and overexposed highlights can be created.

Further, the light source apparatus 11203 may be configured to supplylight of a predetermined wavelength band ready for special lightobservation. In special light observation, for example, by utilizing thewavelength dependency of absorption of light in a body tissue toirradiate light of a narrow band in comparison with irradiation lightupon ordinary observation (namely, white light), narrow band observation(narrow band imaging) of imaging a predetermined tissue such as a bloodvessel of a superficial portion of the mucous membrane or the like in ahigh contrast is performed. Alternatively, in special light observation,fluorescent observation for obtaining an image from fluorescent lightgenerated by irradiation of excitation light may be performed. Influorescent observation, it is possible to perform observation offluorescent light from a body tissue by irradiating excitation light onthe body tissue (autofluorescence observation) or to obtain afluorescent light image by locally injecting a reagent such asindocyanine green (ICG) into a body tissue and irradiating excitationlight corresponding to a fluorescent light wavelength of the reagentupon the body tissue. The light source apparatus 11203 can be configuredto supply such narrow-band light and/or excitation light suitable forspecial light observation as described above.

FIG. 61 is a block diagram depicting an example of a functionalconfiguration of the camera head 11102 and the CCU 11201 depicted inFIG. 60 .

The camera head 11102 includes a lens unit 11401, an image pickup unit11402, a driving unit 11403, a communication unit 11404 and a camerahead controlling unit 11405. The CCU 11201 includes a communication unit11411, an image processing unit 11412 and a control unit 11413. Thecamera head 11102 and the CCU 11201 are connected for communication toeach other by a transmission cable 11400.

The lens unit 11401 is an optical system, provided at a connectinglocation to the lens barrel 11101. Observation light taken in from adistal end of the lens barrel 11101 is guided to the camera head 11102and introduced into the lens unit 11401. The lens unit 11401 includes acombination of a plurality of lenses including a zoom lens and afocusing lens.

The number of image pickup elements which is included by the imagepickup unit 11402 may be one (single-plate type) or a plural number(multi-plate type). Where the image pickup unit 11402 is configured asthat of the multi-plate type, for example, image signals correspondingto respective R, G and B are generated by the image pickup elements, andthe image signals may be synthesized to obtain a color image. The imagepickup unit 11402 may also be configured so as to have a pair of imagepickup elements for acquiring respective image signals for the right eyeand the left eye ready for three dimensional (3D) display. If 3D displayis performed, then the depth of a living body tissue in a surgicalregion can be comprehended more accurately by the surgeon 11131. It isto be noted that, where the image pickup unit 11402 is configured asthat of stereoscopic type, a plurality of systems of lens units 11401are provided corresponding to the individual image pickup elements.

Further, the image pickup unit 11402 may not necessarily be provided onthe camera head 11102. For example, the image pickup unit 11402 may beprovided immediately behind the objective lens in the inside of the lensbarrel 11101.

The driving unit 11403 includes an actuator and moves the zoom lens andthe focusing lens of the lens unit 11401 by a predetermined distancealong an optical axis under the control of the camera head controllingunit 11405. Consequently, the magnification and the focal point of apicked up image by the image pickup unit 11402 can be adjusted suitably.

The communication unit 11404 includes a communication apparatus fortransmitting and receiving various kinds of information to and from theCCU 11201. The communication unit 11404 transmits an image signalacquired from the image pickup unit 11402 as RAW data to the CCU 11201through the transmission cable 11400.

In addition, the communication unit 11404 receives a control signal forcontrolling driving of the camera head 11102 from the CCU 11201 andsupplies the control signal to the camera head controlling unit 11405.The control signal includes information relating to image pickupconditions such as, for example, information that a frame rate of apicked up image is designated, information that an exposure value uponimage picking up is designated and/or information that a magnificationand a focal point of a picked up image are designated.

It is to be noted that the image pickup conditions such as the framerate, exposure value, magnification or focal point may be designated bythe user or may be set automatically by the control unit 11413 of theCCU 11201 on the basis of an acquired image signal. In the latter case,an auto exposure (AE) function, an auto focus (AF) function and an autowhite balance (AWB) function are incorporated in the endoscope 11100.

The camera head controlling unit 11405 controls driving of the camerahead 11102 on the basis of a control signal from the CCU 11201 receivedthrough the communication unit 11404.

The communication unit 11411 includes a communication apparatus fortransmitting and receiving various kinds of information to and from thecamera head 11102. The communication unit 11411 receives an image signaltransmitted thereto from the camera head 11102 through the transmissioncable 11400.

Further, the communication unit 11411 transmits a control signal forcontrolling driving of the camera head 11102 to the camera head 11102.The image signal and the control signal can be transmitted by electricalcommunication, optical communication or the like.

The image processing unit 11412 performs various image processes for animage signal in the form of RAW data transmitted thereto from the camerahead 11102.

The control unit 11413 performs various kinds of control relating toimage picking up of a surgical region or the like by the endoscope 11100and display of a picked up image obtained by image picking up of thesurgical region or the like. For example, the control unit 11413 createsa control signal for controlling driving of the camera head 11102.

Further, the control unit 11413 controls, on the basis of an imagesignal for which image processes have been performed by the imageprocessing unit 11412, the display apparatus 11202 to display a pickedup image in which the surgical region or the like is imaged. Thereupon,the control unit 11413 may recognize various objects in the picked upimage using various image recognition technologies. For example, thecontrol unit 11413 can recognize a surgical tool such as forceps, aparticular living body region, bleeding, mist when the energy device11112 is used and so forth by detecting the shape, color and so forth ofedges of objects included in a picked up image. The control unit 11413may cause, when it controls the display apparatus 11202 to display apicked up image, various kinds of surgery supporting information to bedisplayed in an overlapping manner with an image of the surgical regionusing a result of the recognition. Where surgery supporting informationis displayed in an overlapping manner and presented to the surgeon11131, the burden on the surgeon 11131 can be reduced and the surgeon11131 can proceed with the surgery with certainty.

The transmission cable 11400 which connects the camera head 11102 andthe CCU 11201 to each other is an electric signal cable ready forcommunication of an electric signal, an optical fiber ready for opticalcommunication or a composite cable ready for both of electrical andoptical communications.

Here, while, in the example depicted, communication is performed bywired communication using the transmission cable 11400, thecommunication between the camera head 11102 and the CCU 11201 may beperformed by wireless communication.

It is to be noted here that, although an endoscopic surgery system isdescribed as an example, the technology according to the presentdisclosure may be applied, for example, to a microscopic surgery systemand so forth.

It is to be noted that it is also possible for the present disclosure tohave such configurations as described below.

-   [A01]

<<Imaging Device>

An imaging device including:

a first electrode;

a charge accumulating electrode arranged with a space from the firstelectrode;

an isolation electrode arranged with a space from the first electrodeand the charge accumulating electrode and surrounding the chargeaccumulating electrode;

a photoelectric conversion layer formed in contact with the firstelectrode and above the charge accumulating electrode with an insulatinglayer interposed therebetween; and

a second electrode formed on the photoelectric conversion layer, inwhich

the isolation electrode includes a first isolation electrode and asecond isolation electrode arranged with a space from the firstisolation electrode, and

the first isolation electrode is positioned between the first electrodeand the second isolation electrode.

-   [A02]

The imaging device according to [A01], in which the first isolationelectrode has potential of a fixed value V_(ES-1), and the secondisolation electrode has potential of another fixed value V_(ES-2).

-   [A03]

The imaging device according to [A01], in which the first isolationelectrode has potential that changes from a fixed value V_(ES-1), andthe second isolation electrode has potential of a fixed value V_(ES-2).

-   [A04]

The imaging device according to [A02] or [A03], in which, in a casewhere charge to be accumulated is electrons, V_(ES-1)>V_(ES-2) issatisfied, but in a case where positive holes to be accumulated areelectrons, V_(ES-1)<V_(ES-2) is satisfied.

-   [A05]

The imaging device according to [A02] or [A03], in whichV_(ES-2)=V_(ES-1) is satisfied.

-   [A06]

<<Solid-State Image Sensor: First Form××

A solid-state image sensor including:

a plurality of imaging device blocks each including P×Q (where P 2 andQ 1) imaging devices such that P imaging devices are arranged in a firstdirection and Q imaging device is arranged in a second directiondifferent from the first direction, in which

each imaging device includes

-   -   a first electrode,    -   a charge accumulating electrode arranged with a space from the        first electrode,    -   an isolation electrode arranged with a space from the first        electrode and the charge accumulating electrode and surrounding        the charge accumulating electrode,    -   a photoelectric conversion layer formed in contact with the        first electrode and above the charge accumulating electrode with        an insulating layer interposed therebetween, and    -   a second electrode formed on the photoelectric conversion layer,

the isolation electrode includes a first isolation electrode, a secondisolation electrode, and a third isolation electrode,

the first isolation electrode is arranged adjacent to but with a spacefrom the first electrode between imaging devices placed side by side atleast along the second direction in the imaging device block,

the second isolation electrode is arranged between imaging devices inthe imaging device block, and

the third isolation electrode is arranged between imaging device blocks.

-   [A07]

The solid-state image sensor according to [A06], in which the thirdisolation electrode is shared by imaging device blocks adjacent to eachother.

-   [A08]

The solid-state image sensor according to [A06] or [A07] , in which

the first isolation electrode is arranged adjacent to but with a spacefrom the first electrode between the imaging devices placed side by sidealong the second direction in the imaging device block, and

the second isolation electrode is arranged between imaging devicesplaced side by side along the first direction and is arranged with aspace from the first isolation electrode between the imaging devicesplaced side by side along the second direction.

-   [A09]

The solid-state image sensor according to [A08], in which the secondisolation electrode and the third isolation electrode are connected toeach other.

-   [A10]

The solid-state image sensor according to [A06] or [A07] , in which

the first isolation electrode is arranged adjacent to but with a spacefrom the first electrode between the imaging devices placed side by sidealong the second direction in the imaging device block and is furtherarranged adjacent to but with a space from the first electrode betweenimaging devices placed side by side along the first direction, and

the second isolation electrode is arranged with a space from the firstisolation electrode between the imaging devices placed side by sidealong the second direction and is further arranged with a space from thefirst isolation electrode between the imaging devices placed side byside along the first direction.

-   [A11]

The solid-state image sensor according to [A10], in which the secondisolation electrode and the third isolation electrode are connected toeach other.

-   [A12]

The solid-state image sensor according to [A11], in which the firstisolation electrode has potential of a fixed value V_(ES-1), and thesecond isolation electrode and the third isolation electrode also havepotential of a fixed value V_(ES-2).

-   [A13]

The solid-state image sensor according to [A11], in which the firstisolation electrode has potential that changes from a fixed valueV_(ES-1), and the second isolation electrode and the third isolationelectrode have potential of a fixed value V_(ES-2).

-   [A14]

The solid-state image sensor according to [A12] or [A13], in which, in acase where charge to be accumulated is electrons, V_(ES-1)>V_(ES-2) issatisfied, but in a case where positive holes to be accumulated areelectrons, V_(ES-1)<V_(ES-2) is satisfied.

-   [A15]

The solid-state image sensor according to [A12] or [A13] , in whichV_(ES-2)=V_(ES-1) is satisfied.

-   [A16]

The solid-state image sensor according to any one of [A06] to [A15], inwhich the first electrode is shared by P×Q imaging devices configuringthe imaging device block.

-   [A17]

The solid-state image sensor according to any one of [A06] to [A16], inwhich P=2 and Q=2 are satisfied.

-   [A18]

The solid-state image sensor according to any one of [A01] to [A17],further including:

a semiconductor substrate, in which

a photoelectric conversion portion is arranged above the semiconductorsubstrate.

-   [A19]

The solid-state image sensor according to any one of [A01] to [A18],further including:

a transfer controlling electrode arranged with a space from the firstelectrode and the charge accumulating electrode between the firstelectrode and the charge accumulating electrode and is arranged opposedto the photoelectric conversion layer with an insulating film interposedtherebetween.

-   [A20]

The solid-state image sensor according to any one of [A01] to [A19], inwhich the charge accumulating electrode includes a plurality of chargeaccumulating electrode segments.

-   [A21]

The solid-state image sensor according to any one of [A01] to [A20], inwhich the charge accumulating electrode has a size greater than that ofthe first electrode.

-   [A22]

The solid-state image sensor according to any one of [A01] to [A21], inwhich the first electrode extends in an opening provided in theinsulating layer and is connected to the photoelectric conversion layer.

-   [A23]

The solid-state image sensor according to any one of [A01] to [A21], inwhich the photoelectric conversion layer extends in an opening providedin the insulating layer and is connected to the first electrode.

-   [A24]

The solid-state image sensor according to [A23], in which

an edge portion of a top face of the first electrode is covered with theinsulating layer,

the first electrode is exposed on a bottom face of the opening, and

where a face of the insulating layer contacting with the top face of thefirst electrode is a first face and a face of the insulating layercontacting with a portion of the photoelectric conversion layer opposedto the charge accumulating electrode is a second face, a side face ofthe opening has an inclination that expands from the first face to thesecond face.

-   [A25]

The solid-state image sensor according to [A24], in which the side faceof the opening having the inclination that expands from the first facetoward the second face is positioned on the charge accumulatingelectrode side.

-   [A26]

<<Control of Potential of First Electrode and Charge AccumulatingElectrode>>

The solid-state image sensor according to any one of [A01] to [A25],further including:

a control portion provided on a semiconductor substrate and including adriving circuit, in which

the first electrode and the charge accumulating electrode are connectedto the driving circuit,

during a charge accumulation period, from the driving circuit, potentialV₁₁ is applied to the first electrode, potential V₁₂ is applied to thecharge accumulating electrode, and charge is accumulated into thephotoelectric conversion layer,

during a charge transfer period, from the driving circuit, potential V₂₁is applied to the first electrode, potential V₂₂ is applied to thecharge accumulating electrode, and the charge accumulated in thephotoelectric conversion layer is read out to the control portionthrough the first electrode, and

in the case where the potential of the first electrode is higher thanthat of the second electrode,

V₁₂≥V₁₁ and V₂₂<V₂₁

are satisfied, but in the case where the potential of the firstelectrode is lower than that of the second electrode,

V₁₂≤V₁₁ and V₂₂>V₂₁

are satisfied.

-   [A27]

<<Charge Accumulating Electrode Segment>>

The solid-state image sensor according to any one of [A01] to [A19], inwhich the charge accumulating electrode includes a plurality of chargeaccumulating electrode segments.

-   [A28]

The solid-state image sensor according to [A27], in which,

in the case where the potential of the first electrode is higher thanthat of the second potential, during a charge transfer period, thepotential applied to the charge accumulating electrode segment that ispositioned nearest to the first electrode is higher than the potentialapplied to the charge accumulating electrode segment positioned remotestfrom the first electrode, and

in the case where the potential of the first electrode is lower thanthat of the second electrode, during a charge transfer period, thepotential applied to the charge accumulating electrode segmentpositioned nearest to the first electrode is lower than the potentialapplied to the charge accumulating electrode segment positioned remotestfrom the first electrode.

-   [A29]

The solid-state image sensor according to any one of [A01] to [A28] , inwhich,

at least a floating diffusion layer and an amplification transistor thatconfigure a control portion are provided on a semiconductor substrate,and

the first electrode is connected to the floating diffusion layer and agate portion of the amplification transistor.

-   [A30]

The solid-state image sensor according to [A29], in which

a rest transistor and a selection transistor that configure the controlportion are further provided on the semiconductor substrate,

the floating diffusion layer is connected to one of source/drain regionsof the reset transistor, and

one of source/drain regions of the amplification transistor is connectedto one of source/drain regions of the selection transistor, and theother one of the source/drain regions of the selection transistor isconnected to a signal line.

-   [A31]

The solid-state image sensor according to any one of [A01] to [A30] , inwhich light is incident from the second electrode side, and a shadinglayer is formed on a light incidence side rather near to the secondelectrode.

-   [A32]

The solid-state image sensor according to any one of [A01] to [A30] , inwhich light is incident from the second electrode side, and light is notincident to the first electrode.

-   [A33]

The solid-state image sensor according to [A32], in which a shadinglayer is formed above the first electrode and on a light incidence siderather near to the second electrode.

-   [A34]

The solid-state image sensor according to [A32], in which

an on-chip microlens is provided above the charge accumulating electrodeand the second electrode, and

light incident to the on-chip microlens is focused on the chargeaccumulating electrode.

-   [B01]

<<Imaging Device: First Configuration>>

The solid-state image sensor according to any one of [A01] to [A34] , inwhich the photoelectric conversion portion includes N (where N≥2)photoelectric conversion portion segments,

the photoelectric conversion layer includes N photoelectric conversionlayer segments,

the insulating layer includes N insulating layer segments,

the charge accumulating electrode includes N charge accumulatingelectrode segments,

an nth (where n=1, 2, 3, . . . , N) photoelectric conversion portionsegment includes an nth charge accumulating electrode segment, an nthinsulating layer segment, and an nth photoelectric conversion layersegment,

the photoelectric conversion portion segment having a higher value of nis positioned farther away from the first electrode, and

the insulating layer segments have a thickness that gradually changesover a range from a first photoelectric conversion portion segment to anNth photoelectric conversion portion segment.

-   [B02]

<<Imaging Device: Second Configuration>>

The solid-state image sensor according to any one of [A01] to [A34] , inwhich

the photoelectric conversion portion includes N (where N≥2)photoelectric conversion portion segments,

the photoelectric conversion layer includes N photoelectric conversionlayer segments,

the insulating layer includes N insulating layer segments,

the charge accumulating electrode includes N charge accumulatingelectrode segments,

an nth (where n=1, 2, 3, . . . , N) photoelectric conversion portionsegment includes an nth charge accumulating electrode segment, an nthinsulating layer segment, and an nth photoelectric conversion layersegment,

the photoelectric conversion portion segment having a higher value of nis positioned farther away from the first electrode, and

the photoelectric conversion layer segments have a thickness thatgradually changes over a range from a first photoelectric conversionportion segment to an Nth photoelectric conversion portion segment.

-   [B03]

<<Imaging Device: Third Configuration>>

The solid-state image sensor according to any one of [A01] to [A34] , inwhich

the photoelectric conversion portion includes N (where N≥2)photoelectric conversion portion segments,

the photoelectric conversion layer includes N photoelectric conversionlayer segments,

the insulating layer includes N insulating layer segments,

the charge accumulating electrode includes N charge accumulatingelectrode segments;

an nth (where n=1, 2, 3, . . . , N) photoelectric conversion portionsegment includes an nth charge accumulating electrode segment, an nthinsulating layer segment, and an nth photoelectric conversion layersegment,

the photoelectric conversion portion segment having a higher value of nis positioned farther away from the first electrode, and

a material configuring the insulating layer segment is different inadjacent ones of the photoelectric conversion portion segments.

-   [B04]

<Imaging Device: Fourth Configuration>>

The solid-state image sensor according to any one of [A01] to [A34] , inwhich

the photoelectric conversion portion is configured from N (where N≥2)photoelectric conversion portion segments,

the photoelectric conversion layer includes N photoelectric conversionlayer segments,

the insulating layer includes N insulating layer segments,

the charge accumulating electrode includes N charge accumulatingelectrode segments arranged with a space between each other,

an nth (where n=1, 2, 3, . . . , N) photoelectric conversion portionsegment includes an nth charge accumulating electrode segment, an nthinsulating layer segment, and an nth photoelectric conversion layersegment,

the photoelectric conversion portion segment having a higher value of nis positioned farther away from the first electrode, and

a material configuring the charge accumulating electrode segment isdifferent in adjacent ones of the photoelectric conversion portionsegments.

-   [B05]

<<Imaging Device: Fifth Configuration>>

The solid-state image sensor according to any one of [A01] to [A34] , inwhich

the photoelectric conversion portion includes N (where N≥2)photoelectric conversion portion segments,

the photoelectric conversion layer includes N photoelectric conversionlayer segments,

the insulating layer includes N insulating layer segments,

the charge accumulating electrode includes N charge accumulatingelectrode segments arranged with a space between each other,

an nth (where n=1, 2, 3, . . . , N) photoelectric conversion portionsegment includes an nth charge accumulating electrode segment, an nthinsulating layer segment, and an nth photoelectric conversion layersegment,

the photoelectric conversion portion segment having a higher value of nis positioned farther away from the first electrode, and

an area of the charge accumulating electrode segment gradually decreasesover a range from a first photoelectric conversion portion segment to anNth photoelectric conversion portion segment.

-   [B06]

<<Imaging Device: Sixth Configuration>>

The solid-state image sensor according to any one of [A01] to [A34], inwhich, where a stacking direction of the charge accumulating electrode,the insulating layer, and the photoelectric conversion layer is a Zdirection and a direction away from the first electrode is an Xdirection, a sectional area of a stacked portion when the stackedportion at which the charge accumulating electrode, the insulatinglayer, and the photoelectric conversion layer are stacked is cut along aYZ virtual plane changes depending upon a distance from the firstelectrode.

-   [C01]

<<Stacked Type Imaging Device>>

A stacked type solid-state image sensor including:

at least one imaging device according to any one of [A01] to [B06].

-   [D01]

<<Solid-State Image Sensor: Second Form>>

A solid-state image sensor including:

a stacked type imaging device that includes at least one imaging deviceaccording to any one of [A01] to [B06].

-   [D02]

The solid-state image sensor according to [D01], in which

at least one lower imaging device is provided below the imaging device,and

a wavelength of light to be received by the imaging device and awavelength of light to be received by the lower imaging device aredifferent from each other.

-   [D03]

The solid-state image sensor according to [D02], in which two lowerimaging devices are stacked.

-   [D04]

The solid-state image sensor according to [D02] or [D03], in which lowerimaging device blocks are provided in two layers.

-   [D05]

The solid-state image sensor according to any one of [D01] to [D04], inwhich a plurality of imaging devices configuring the lower imagingdevice block include a shared floating diffusion layer.

REFERENCE SIGNS LIST

10 . . . Imaging device block, 11 . . . Imaging device, 13, 15 . . .Imaging device, 20 ₁, 20 ₂, 20 ₃ . . . Photoelectric conversion portionsegment, 21 . . . First electrode, 22 . . . Second electrode, 23 . . .Photoelectric conversion layer, 23′ . . . Region of photoelectricconversion layer positioned between adjacent imaging devices, 23 _(DN) .. . Lower layer of photoelectric conversion layer, 23 _(UP) . . . Upperlayer of photoelectric conversion layer, 24 . . . Charge accumulatingelectrode, 24A, 24B, 24C . . . Charge accumulating electrode segment,25, 25A, 25B . . . Transfer controlling electrode (charge transferelectrode), 26 . . . Charge discharging electrode, 30, 35 . . .Isolation electrode, 31A . . . First isolation electrode, 31B . . .Second isolation electrode, 32 . . . Third isolation electrode, 33 . . .Pad portion, 34 . . . Connection hole, 41 . . . n-type semiconductorregion configuring second imaging device, 43 . . . n-type semiconductorregion configuring third imaging device, 42, 44, 73 . . . p⁺ layer, 45 .. . Gate portion of transfer transistor, 46 . . . Gate portion oftransfer transistor, 51 . . . Gate portion of reset transistor TR1_(rst), 51A . . . Channel formation region of reset transistor TR1_(rst), 51B, 51C . . . Source/drain region of reset transistor TR1_(rst), 52 . . . Gate portion of amplification transistor TR1 _(amp),52A . . . Channel formation region of amplification transistor TR1_(amp), 52B, 52C . . . Source/drain region of amplification transistorTR1 _(amp), 53 . . . Gate portion of selection transistor TR1 _(sel),53A . . . Channel formation region of selection transistor TR1 _(sel),53B, 53C . . . Source/drain region of selection transistor TR1 _(sel),FD₁, FD₂, FD₃, 45C, 46C . . . Floating diffusion layer, TR1 _(amp) . . .Amplification transistor, TR1 _(rst) . . . Reset transistor, TR1 _(sel). . . Selection transistor, TR2 _(trs) . . . Transfer transistor, TR2_(rst) . . . Reset transistor, TR2 _(amp) . . . Amplificationtransistor, TR2 _(sel) . . . Selection transistor, TR3 _(trs) . . .Transfer transistor, TR3 _(rst) . . . Reset transistor, TR3 _(amp) . . .Amplification transistor, TR3 _(sel) . . . Selection transistor, V_(DD). . . Power supply, RST₁, RST₂, RST₃ . . . Reset line, SEL₁, SEL₂, SEL₃. . . Selection line, 117, VSL₁, VSL₂, VSL₃ . . . Signal line, TG₂, TG₃. . . Transfer gate line, V_(OA), VO_(OB), V_(OT), V_(OU) . . . Wiring,61 . . . Contact hole portion, 62 . . . Wiring layer, 63, 64, 64 ₁, 64₂, 64 ₃, 68A . . . Pad portion, 65, 68B . . . Connection hole, 66, 67 .. . connection portion, 70 . . . Semiconductor substrate, 70A . . .First face (front face) of semiconductor substrate, 70B . . . Secondface (rear face) of semiconductor substrate, 71 . . . Device isolationregion, 72 . . . Oxide film, 74 . . . HfO₂ film, 75 . . . Insulatingfilm, 76 . . . Interlayer insulating layer, 77, 78, 81 . . . Interlayerinsulating layer, 82 . . . Insulating layer, 82′ . . . Region betweenadjacent imaging devices, 82 p . . . First face of insulating layer, 82q . . . Second face of insulating layer, 83 . . . Protective layer, 84,84A, 84B, 84C . . . Opening, 90 . . . On-chip microlens, 91 . . .Various imaging device components positioned below interlayer insulatinglayer, 92 . . . Shading layer, 100 . . . Solid-state image sensor, 101 .. . Stacked type imaging device, 111 . . . Imaging region, 112 . . .Vertical driving circuit, 113 . . . Column signal processing circuit,114 . . . Horizontal driving circuit, 115 . . . Outputting circuit, 116. . . Driving controlling circuit, 118 . . . Horizontal signal line, 200. . . Electronic equipment (camera), 201 . . . Solid-state image sensor,210 . . . Optical lens, 211 . . . Shutter device, 212 . . . Drivingcircuit, 213 . . . Signal processing circuit

What is claimed is:
 1. A solid-state image sensor, comprising: aplurality of imaging device blocks each including P×Q (where P≥2 andQ≥1) imaging devices such that P imaging devices are arranged in a firstdirection and Q imaging devices are arranged in a second directiondifferent from the first direction, wherein each imaging deviceincludes: a first electrode; a charge accumulating electrode arrangedwith a space from the first electrode; an isolation electrode arrangedwith a space from the first electrode and the charge accumulatingelectrode and surrounding the charge accumulating electrode; aphotoelectric conversion layer formed in contact with the firstelectrode and above the charge accumulating electrode with an insulatinglayer interposed therebetween; and a second electrode formed on thephotoelectric conversion layer, wherein the isolation electrode includesa first isolation electrode, a second isolation electrode, and a thirdisolation electrode, wherein the first isolation electrode for eachimaging device is arranged adjacent to but with a space from the firstelectrode between imaging devices placed side by side at least along thesecond direction in the imaging device block, wherein the secondisolation electrode is arranged between imaging devices in the imagingdevice block, wherein the third isolation electrode is arranged betweenimaging device blocks, and wherein the first isolation electrodes of theimaging devices are connected to each other.
 2. The solid-state imagesensor according to claim 1, wherein the charge accumulation electrodehas first and second sides that are parallel to the first direction andthird and fourth sides that are parallel to the second direction.
 3. Thesolid-state image sensor according to claim 2, wherein at least a cornerof the charge accumulation electrode opposed to the first electrode iscut away.
 4. The solid-state image sensor according to claim 3, whereinat least a portion of the first isolation electrode is positionedbetween the first electrode and the cut away portion of the firstisolation electrode.
 5. The solid-state image sensor according to claim1, wherein the first isolation electrode includes first, second, third,and fourth sides.
 6. The solid-state image sensor according to claim 5,wherein the sides of the first isolation electrode are parallel to a cutaway portion of a nearest charge accumulation electrode.
 7. Thesolid-state image sensor according to claim 6, wherein the firstelectrode is disposed within a square interior area of the firstisolation electrode.
 8. The solid-state image sensor according to claim7, wherein corners of the first electrode are cut away.
 9. Thesolid-state image sensor according to claim 1, wherein the secondisolation electrode and the third isolation electrode are connected toeach other.
 10. A solid-state image sensor, comprising: a plurality ofimaging device blocks each including P×Q (where P≥2 and Q≥1) imagingdevices such that P imaging devices are arranged in a first directionand Q imaging devices are arranged in a second direction different fromthe first direction, wherein each imaging device includes: a firstelectrode; a charge accumulating electrode arranged with a space fromthe first electrode; an isolation electrode arranged with a space fromthe first electrode and the charge accumulating electrode; aphotoelectric conversion layer formed in contact with the firstelectrode and above the charge accumulating electrode with an insulatinglayer interposed therebetween; and a second electrode formed on thephotoelectric conversion layer, wherein the isolation electrode for eachimaging device includes a first isolation electrode, a second isolationelectrode, and a third isolation electrode, wherein the first isolationelectrode surrounds the charge accumulating electrode, wherein the firstisolation electrode is arranged adjacent to but with a space from thefirst electrode between imaging devices placed side by side at leastalong the second direction in the imaging device block, wherein thesecond isolation electrode is arranged between imaging devices in theimaging device block, wherein the third isolation electrode is arrangedbetween imaging device blocks, and wherein the first isolationelectrodes of the imaging devices are connected to each other.
 11. Thesolid-state image sensor according to claim 10, wherein the chargeaccumulation electrode has first and second sides that are parallel tothe first direction and third and fourth sides that are parallel to thesecond direction.
 12. The solid-state image sensor according to claim11, wherein at least a corner of the charge accumulation electrodeopposed to the first electrode is cut away.
 13. The solid-state imagesensor according to claim 12, wherein at least a portion of the firstisolation electrode is positioned between the first electrode and thecut away portion of the first isolation electrode.
 14. The solid-stateimage sensor according to claim 10, wherein the first isolationelectrode includes first, second, third, and fourth sides.
 15. Thesolid-state image sensor according to claim 14, wherein the sides of thefirst isolation electrode are parallel to a cut away portion of anearest charge accumulation electrode.
 16. The solid-state image sensoraccording to claim 15, wherein the first electrode is disposed within asquare interior area of the first isolation electrode.
 17. Thesolid-state image sensor according to claim 16, wherein corners of thefirst electrode are cut away.
 18. The solid-state image sensor accordingto claim 10, wherein the second isolation electrode and the thirdisolation electrode are connected to each other.